|
|
SiC MOSFET Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
- SCTW70N120G2V
- STMicroelectronics
-
1:
₩40,951.6
-
714재고 상태
|
Mouser 부품 번호
511-SCTW70N120G2V
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
|
|
714재고 상태
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
91 A
|
21 mOhms
|
- 10 V, + 22 V
|
4.9 V
|
150 nC
|
- 55 C
|
+ 200 C
|
547 W
|
Enhancement
|
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24
- SCTW90N65G2V
- STMicroelectronics
-
1:
₩36,408
-
47재고 상태
-
600예상 2026-04-20
|
Mouser 부품 번호
511-SCTW90N65G2V
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24
|
|
47재고 상태
600예상 2026-04-20
|
|
|
₩36,408
|
|
|
₩31,346.4
|
|
|
₩29,496.4
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
650 V
|
90 A
|
25 mOhms
|
- 10 V, + 22 V
|
1.9 V
|
157 nC
|
- 55 C
|
+ 200 C
|
390 W
|
Enhancement
|
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
- SCT1000N170
- STMicroelectronics
-
1:
₩13,408.8
-
590재고 상태
|
Mouser 부품 번호
511-SCT1000N170
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
|
|
590재고 상태
|
|
|
₩13,408.8
|
|
|
₩9,605.2
|
|
|
₩8,006.8
|
|
|
₩7,133.6
|
|
|
₩6,660
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.7 kV
|
6 A
|
1 Ohms
|
- 10 V, + 25 V
|
2.1 V
|
14 nC
|
- 55 C
|
+ 200 C
|
120 W
|
Enhancement
|
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
- SCT20N120AG
- STMicroelectronics
-
1:
₩23,532
-
510재고 상태
|
Mouser 부품 번호
511-SCT20N120AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
|
|
510재고 상태
|
|
|
₩23,532
|
|
|
₩17,360.4
|
|
|
₩12,047.2
|
|
|
보기
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
|
N-Channel
|
1 Channel
|
1.2 kV
|
20 A
|
239 mOhms
|
- 20 V, + 20 V
|
3.5 V
|
45 nC
|
- 55 C
|
+ 200 C
|
175 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
- SCTW40N120G2VAG
- STMicroelectronics
-
1:
₩25,456
-
571재고 상태
|
Mouser 부품 번호
511-SCTW40N120G2VAG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
|
|
571재고 상태
|
|
|
₩25,456
|
|
|
₩15,791.6
|
|
|
₩15,762
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
100 mOhms
|
- 10 V, + 22 V
|
4.9 V
|
61 nC
|
- 55 C
|
+ 200 C
|
278 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H
- SCTW100N65G2AG
- STMicroelectronics
-
1:
₩51,045.2
-
317재고 상태
-
NRND
|
Mouser 부품 번호
511-SCTW100N65G2AG
NRND
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H
|
|
317재고 상태
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
650 V
|
100 A
|
69 mOhms
|
- 10 V, + 22 V
|
5 V
|
162 nC
|
- 55 C
|
+ 200 C
|
420 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
- SCTWA90N65G2V-4
- STMicroelectronics
-
1:
₩43,097.6
-
111재고 상태
|
Mouser 부품 번호
511-SCTWA90N65G2V-4
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
|
|
111재고 상태
|
|
|
₩43,097.6
|
|
|
₩32,589.6
|
|
|
₩31,198.4
|
|
|
견적
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
119 A
|
24 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 200 C
|
565 W
|
Enhancement
|
|
|
|
|
SiC MOSFET Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
- SCT10N120AG
- STMicroelectronics
-
1:
₩13,571.6
-
844예상 2026-11-23
|
Mouser 부품 번호
511-SCT10N120AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
|
|
844예상 2026-11-23
|
|
|
₩13,571.6
|
|
|
₩8,006.8
|
|
|
₩6,985.6
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
|
N-Channel
|
1 Channel
|
1.2 kV
|
12 A
|
500 mOhms
|
- 10 V, + 25 V
|
3.5 V
|
22 nC
|
- 55 C
|
+ 200 C
|
150 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247
- SCTWA90N65G2V
- STMicroelectronics
-
1:
₩41,795.2
-
69예상 2026-04-24
|
Mouser 부품 번호
511-SCTWA90N65G2V
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247
|
|
69예상 2026-04-24
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
650 V
|
119 A
|
24 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 200 C
|
565 W
|
Enhancement
|
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A
- SCT018W65G3AG
- STMicroelectronics
-
600:
₩15,880.4
-
비재고 리드 타임 17 주
-
신제품
|
Mouser 부품 번호
511-SCT018W65G3AG
신제품
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A
|
|
비재고 리드 타임 17 주
|
|
|
₩15,880.4
|
|
|
보기
|
|
|
견적
|
|
최소: 600
배수: 600
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
-10 V, 22 V
|
4.2 V
|
76 nC
|
- 55 C
|
+ 200 C
|
398 W
|
Enhancement
|
AEC-Q100
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3
- STMicroelectronics
-
600:
₩19,136.4
-
비재고 리드 타임 32 주
-
신제품
|
Mouser 부품 번호
511-SCT040W120G3
신제품
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
비재고 리드 타임 32 주
|
|
|
₩19,136.4
|
|
|
견적
|
|
|
견적
|
|
최소: 600
배수: 600
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
-10 V, 22 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
|
|
대한민국
