SiC MOSFET

 SiC MOSFET
SiC MOSFETs are available at Mouser Electronics from industry leading manufacturers. Mouser is an authorized distributor for many SiC MOSFET manufacturers including Infineon, Microchip, Navitas Semiconductor, onsemi, ROHM Semiconductor, STMicroelectronics, Wolfspeed & more. Please view our large selection of SiC MOSFETs below.
결과: 1,322
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 장착 스타일 패키지/케이스 트랜지스터 극성 채널 수 Vds - 드레인 소스 항복 전압 Id - 연속 드레인 전류 Rds On - 드레인 소스 저항 Vgs - 게이트 소스 전압 Vgs th - 게이트 소스 역치 전압 Qg - 게이트 전하 최저 작동온도 최고 작동온도 Pd - 전력 발산 채널 모드 자격 상표명
Infineon Technologies SiC MOSFET SiC MOSFET, 750 V 385재고 상태
최소: 1
배수: 1
Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 40 A 80 mOhms - 7 V, + 23 V 5.6 V 30 nC - 55 C + 175 C 142 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 70재고 상태
750예상 2026-05-14
최소: 1
배수: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 45 A 50 mOhms - 7 V, + 23 V 5.6 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
IXYS SiC MOSFET 1200V 40mohm (65A a. 25C) SiC MOSFET in TO-263-7L 88재고 상태
800예상 2026-05-25
최소: 1
배수: 1
: 800

SMD/SMT TO-263-7L N-Channel 1 Channel 1.2 kV 65 A 53 mOhms - 5 V, + 20 V 4.5 V 110 nC - 55 C + 175 C 417 W Enhancement
APC-E SiC MOSFET 1200V 75mR, TO-247-4L, Industrial Grade 262재고 상태
최소: 1
배수: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
Infineon Technologies SiC MOSFET Automotive SiC MOSFET, 750 V 25재고 상태
최소: 1
배수: 1
Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 60 A 31 mOhms - 7 V, + 23 V 5.6 V 49 nC - 55 C + 175 C 202 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 100재고 상태
최소: 1
배수: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 53 A 41.3 mOhms - 7 V, + 23 V 5.6 V 37 nC - 55 C + 175 C 217 W Enhancement CoolSiC
APC-E SiC MOSFET 650V 50mR, TO-247-4L, Automotive Grade 270재고 상태
최소: 1
배수: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
Infineon Technologies SiC MOSFET CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK 24재고 상태
750예상 2026-06-18
최소: 1
배수: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 220 A 9 mOhms - 7 V, + 23 V 5.6 V 164 nC - 55 C + 175 C 789 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET CoolSiC MOSFET 750 V G2 130재고 상태
최소: 1
배수: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 50 A 41.3 mOhms - 7 V, 23 V 5.6 V 37 nC - 55 C + 175 C 189 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET CoolSiC MOSFET 750 V G2 148재고 상태
최소: 1
배수: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 29 A 78 mOhms - 7 V, 23 V 5.6 V 20 nC - 55 C + 175 C 116 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK 49재고 상태
최소: 1
배수: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 36 A 65 mOhms - 7 V, + 23 V 5.6 V 24 nC - 55 C + 175 C 148 W Enhancement CoolSiC
APC-E SiC MOSFET 1200V 75mR, TO-247-4L, Automotive Grade 290재고 상태
최소: 1
배수: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
Infineon Technologies SiC MOSFET CoolSiC Automotive Power Device 750 V G2 31재고 상태
최소: 1
배수: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 86 A 25 mOhms -7 V to + 23 V 4.5 V 59 nC - 55 C + 175 C 340 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK 30재고 상태
750주문 중
최소: 1
배수: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 45 A 50 mOhms - 7 V, + 23 V 5.6 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET CoolSiC MOSFET 750 V G2 128재고 상태
최소: 1
배수: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 64 A 31 mOhms - 7 V, 23 V 5.6 V 49 nC - 55 C + 175 C 234 W Enhancement CoolSiC
IXYS SiC MOSFET 1200V 40mohm (65A a. 25C) SiC MOSFET in TO247-4L 87재고 상태
450예상 2026-05-25
최소: 1
배수: 1
: 450

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 65 A 52 mOhms - 5 V, + 20 V 4.5 V 110 nC - 55 C + 175 C 375 W Enhancement
APC-E SiC MOSFET 650V 50mR, TO-247-4L, Industrial Grade 288재고 상태
최소: 1
배수: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
Infineon Technologies SiC MOSFET CoolSiC MOSFET 750 V G2 160재고 상태
최소: 1
배수: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 42 A 50 mOhms - 7 V, 23 V 5.6 V 30 nC - 55 C + 175 C 156 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET CoolSiC MOSFET 750 V G2 600재고 상태
750예상 2026-05-28
최소: 1
배수: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 840 V 357 A 5 mOhms - 7 V to + 23 V 5.6 V 342 nC - 55 C + 175 C 1.499 kW Enhancement CoolSiC
Central Semiconductor SiC MOSFET 1700V Through-Hole MOSFET N-Channel SiC 27재고 상태
최소: 1
배수: 1
Through Hole TO-247-3 N-Channel 1 Channel 1.7 kV 26 A 40 mOhms 20 V 2.4 V - 55 C + 175 C 28 W Depletion
onsemi SiC MOSFET 750V/18MOSICFETG4TO263 1,207재고 상태
최소: 1
배수: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 72 A 18 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 259 W Enhancement SiC FET

onsemi SiC MOSFET SIC MOSFET 900V TO247-4L 20MOHM 2,247재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 900 V 118 A 28 mOhms - 8 V, + 22 V 4.3 V 196 nC - 55 C + 175 C 484 W Enhancement EliteSiC


Diodes Incorporated SiC MOSFET SiC MOSFET BVDSS: >1000V TO263-7 TUBE 50PCS 35재고 상태
최소: 1
배수: 1

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 38.2 A 90 mOhms - 4 V, + 15 V 3.5 V 54.6 nC - 55 C + 175 C 197 W Enhancement
APC-E SiC MOSFET 1700V 1000mR, TO247-3L, Industrial Grade 300재고 상태
최소: 1
배수: 1

Through Hole TO-247-3 1.7 kV 6.8 A 1 kOhms 20 V + 175 C


Diodes Incorporated SiC MOSFET SiC MOSFET BVDSS: >1000V TO263-7 TUBE 50PCS 50재고 상태
최소: 1
배수: 1

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 38.2 A 90 mOhms - 4 V, + 15 V 3.5 V 54.6 nC - 55 C + 175 C 197 W Enhancement