1200V H Series Trench Gate Field-Stop IGBTs

STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (VCE(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

결과: 20
선택 이미지 부품 번호
 제조업체
설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다.
수량 RoHS ECAD 모델 기술
패키지/케이스
장착 스타일
구성
콜렉터- 최대 이미터 전압 VCEO
콜렉터-이미터 포화 전압
최대 게이트 이미터 전압
25 C의 지속적인 컬렉터 전류
Pd - 전력 발산
최저 작동온도
최고 작동온도
시리즈
포장


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Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 86 A 272 W - 55 C + 175 C HB2 Tube
STMicroelectronics IGBT Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-247 long l
데이터시트
990재고 상태
최소: 1
배수: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 40 A 147 W - 55 C + 175 C Tube


STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
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511재고 상태
최소: 1
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Si Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 30 A 259 W - 55 C + 175 C STGWA15H120DF2 Tube
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STMicroelectronics IGBT Trench gate field-stop 1200 V 50 A high-speed H series IGBT
데이터시트
560재고 상태
최소: 1
배수: 1

Si Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 100 A 535 W - 55 C + 175 C Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
데이터시트
1,693재고 상태
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STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
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659재고 상태
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Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGW25H120F2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
데이터시트
1,828재고 상태
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배수: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGW40H120DF2 Tube

STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
데이터시트
747재고 상태
최소: 1
배수: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGWA40H120DF2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 600 V, 5 A high speed
데이터시트
2,897재고 상태
MouseReel 사용가능
최소: 1
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릴: 2,500

Si DPAK-3 (TO-252-3) SMD/SMT Single 600 V 1.5 V - 20 V, 20 V 10 A 83 W - 55 C + 175 C STGD5H60DF Reel, Cut Tape, MouseReel
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 600 V, 5 A high speed
데이터시트
931재고 상태
1,000예상 2026-04-03
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Si TO-220-3 Through Hole Single 600 V 1.5 V - 20 V, 20 V 10 A 88 W - 55 C + 175 C STGP5H60DF Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
데이터시트
610재고 상태
최소: 1
배수: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 30 A 259 W - 55 C + 175 C STGW15H120DF2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
데이터시트
452재고 상태
최소: 1
배수: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGW40H120F2 Tube
STMicroelectronics IGBT Trench gate field-stop, 650 V, 20 A, high speed HB2 series IGBT in a TO-247 long
데이터시트
493재고 상태
최소: 1
배수: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 40 A 147 W - 55 C + 175 C HB2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 600 V, 7 A high speed
데이터시트
비재고 리드 타임 15 주
최소: 2,000
배수: 1,000

Si TO-220-3 Through Hole Single 600 V 1.95 V - 20 V, 20 V 14 A 88 W - 55 C + 175 C STGP7H60DF Tube
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데이터시트
비재고 리드 타임 14 주
최소: 1
배수: 1

Si Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGWA25H120DF2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
데이터시트
비재고 리드 타임 14 주
최소: 600
배수: 600

Si Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGWA25H120F2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 600 V, 5 A high speed
데이터시트
비재고 리드 타임 15 주
최소: 2,000
배수: 1,000
릴: 1,000

Si D2PAK-3 SMD/SMT Single 600 V 1.5 V - 20 V, 20 V 10 A 88 W - 55 C + 175 C STGB5H60DF Reel
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데이터시트
비재고 리드 타임 14 주
최소: 600
배수: 600

Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 60 A 180 W - 55 C + 175 C Tube