Microchip SiC MOSFET

결과: 119
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 장착 스타일 패키지/케이스 트랜지스터 극성 채널 수 Vds - 드레인 소스 항복 전압 Id - 연속 드레인 전류 Rds On - 드레인 소스 저항 Vgs - 게이트 소스 전압 Vgs th - 게이트 소스 역치 전압 Qg - 게이트 전하 최저 작동온도 최고 작동온도 Pd - 전력 발산 채널 모드
Microchip Technology SiC MOSFET MOSFET SIC 700 V 15 mOhm TO-247-4 150재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 700 V 112 A 19 mOhms - 10 V, + 23 V 1.9 V 215 nC - 55 C + 175 C 524 W Enhancement
Microchip Technology SiC MOSFET MOSFET SIC 1200 V 25 mOhm TO-247-4 258재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 103 A 31 mOhms - 10 V, + 23 V 1.8 V 232 nC - 55 C + 175 C 500 W Enhancement
Microchip Technology SiC MOSFET MOSFET SIC 700 V 35 mOhm TO-268 98재고 상태
최소: 1
배수: 1

SMD/SMT D3PAK-3 N-Channel 1 Channel 700 V 65 A 44 mOhms - 10 V, + 23 V 1.9 V 99 nC - 55 C + 175 C 206 W Enhancement
Microchip Technology SiC MOSFET MOSFET SIC 1200 V 40 mOhm TO-268 44재고 상태
최소: 1
배수: 1

SMD/SMT D3PAK-3 N-Channel 1 Channel 1.2 kV 64 A 50 mOhms - 10 V, + 23 V 1.8 V 137 nC - 55 C + 175 C 303 W Enhancement
Microchip Technology SiC MOSFET MOSFET SIC 1200 V 25 mOhm TO-268 23재고 상태
최소: 1
배수: 1

SMD/SMT D3PAK-3 N-Channel 1 Channel 1.2 kV 89 A 31 mOhms - 10 V, + 23 V 1.8 V 232 nC - 55 C + 175 C 370 W Enhancement
Microchip Technology SiC MOSFET MOSFET SIC 1200 V 40 mOhm TO-247-4 67재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 66 A 40 mOhms - 10 V, + 23 V 2.6 V 137 nC - 55 C + 175 C 323 W Enhancement
Microchip Technology SiC MOSFET MOSFET SIC 1200 V 20 mOhm TO-247-4 Notch 115재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 97 A 24 mOhms - 10 V, 21 V 3 V 136 nC - 55 C + 175 C 416 W Enhancement
Microchip Technology SiC MOSFET MOSFET SIC 1200 V 25 mOhm TO-247-4 Notch 65재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 81 A 33 mOhms - 10 V, 21 V 5 V 109 nC - 55 C + 175 C 357 W Enhancement
Microchip Technology SiC MOSFET MOSFET SIC 1200 V 30 mOhm TO-247-4 Notch 115재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 69 A 40 mOhms - 10 V, 21 V 5 V 91 nC - 55 C + 175 C 310 W Enhancement
Microchip Technology SiC MOSFET MOSFET SIC 1200 V 40 mOhm TO-247-4 Notch 115재고 상태
최소: 1
배수: 1

Thorugh Hole TO-247-4 N-Channel 1 Channel 1.2 kV 54 A 53 mOhms - 10 V, 21 V 5 V 69 nC - 55 C + 175 C 256 W Enhancement
Microchip Technology SiC MOSFET MOSFET SIC 1200 V 45 mOhm TO-247-4 Notch 120재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 49 A 60 mOhms - 10 V, 21 V 5 V 61 nC - 55 C + 175 C 237 W Enhancement
Microchip Technology SiC MOSFET MOSFET SIC 1200 V 60 mOhm TO-247-4 Notch 117재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 38 A 80 mOhms - 10 V, 21 V 5 V 45 nC - 55 C + 175 C 192 W Enhancement
Microchip Technology SiC MOSFET MOSFET SIC 1200 V 80 mOhm TO-247-4 Notch 81재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 30 A 107 mOhms - 10 V, + 21 V 5 V 34 nC - 55 C + 175 C 161 W Enhancement
Microchip Technology SiC MOSFET MOSFET SIC 700 V 15 mOhm TO-247-4 Notch 310재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 700 V 112 A 19 mOhms - 10 V, + 23 V 5 V 215 nC - 55 C + 175 C 524 W Enhancement
Microchip Technology SiC MOSFET MOSFET SIC 1200 V 17 mOhm TO-247-4 Notch 20재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 119 A 22 mOhms - 10 V, + 23 V 5 V 194 nC - 55 C + 175 C 577 W Enhancement
Microchip Technology SiC MOSFET MOSFET SIC 1200 V 25 mOhm TO-247-4 Notch 23재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 113 A 31 mOhms - 10 V, + 23 V 5 V 232 nC - 55 C + 175 C 577 W Enhancement
Microchip Technology SiC MOSFET MOSFET SIC 700 V 35 mOhm TO-247-4 Notch 79재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 700 V 75 A 44 mOhms - 10 V, + 23 V 5 V 93 nC - 55 C + 175 C 304 W Enhancement
Microchip Technology SiC MOSFET MOSFET SIC 1200 V 40 mOhm TO-247-4 Notch 58재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 71 A 50 mOhms - 10 V, + 23 V 5 V 137 nC - 55 C + 175 C 371 W Enhancement
Microchip Technology SiC MOSFET MOSFET SIC 700 V 15 mOhm TO-268 91재고 상태
최소: 1
배수: 1

SMD/SMT D3PAK-3 N-Channel 1 Channel 700 V 112 A 19 mOhms - 10 V, + 23 V 1.9 V 215 nC - 55 C + 175 C 477 W Enhancement
Microchip Technology SiC MOSFET MOSFET SIC 1200 V 25 mOhm TO-247 142재고 상태
최소: 1
배수: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 113 A 31 mOhms - 10 V, + 23 V 1.9 V 232 nC - 55 C + 175 C 577 W Enhancement
Microchip Technology SiC MOSFET MOSFET SIC 1700 V 35 mOhm TO-247 90재고 상태
최소: 1
배수: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.7 kV 68 A 45 mOhms - 10 V, + 23 V 1.8 V 178 nC - 55 C + 175 C 370 W Enhancement
Microchip Technology SiC MOSFET MOSFET SIC 1200 V 80 mOhm TO-247 238재고 상태
최소: 1
배수: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 37 A 100 mOhms - 10 V, + 23 V 1.8 V 64 nC - 55 C + 175 C 200 W Enhancement
Microchip Technology SiC MOSFET MOSFET SIC 1700 V 750 mOhm TO-247-4 312재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1.7 kV 750 mOhms
Microchip Technology SiC MOSFET MOSFET SIC 1200 V 17 mOhm TO-247-4 42재고 상태
최소: 1
배수: 1

Screw Mount TO-247-4 N-Channel 1 Channel 1.2 kV 113 A 17.6 mOhms - 10 V, + 23 V 2.7 V - 55 C + 175 C 455 W
Microchip Technology SiC MOSFET MOSFET SIC 1700 V 35 mOhm TO-247-4 318재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.7 kV 68 A 35 mOhms - 10 V, + 23 V 3.25 V 178 nC - 55 C + 175 C 370 W Enhancement