|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
- SCT027H65G3AG
- STMicroelectronics
-
1:
₩20,687.2
-
964재고 상태
-
신제품
|
Mouser 부품 번호
511-SCT027H65G3AG
신제품
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
|
|
964재고 상태
|
|
|
₩20,687.2
|
|
|
₩14,440
|
|
|
₩11,734.4
|
|
|
₩10,959.2
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
60 A
|
39.3 mOhms
|
- 10 V, + 22 V
|
3 V
|
48.6 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
- SCT055TO65G3
- STMicroelectronics
-
1:
₩13,908
-
1,754재고 상태
-
신제품
|
Mouser 부품 번호
511-SCT055TO65G3
신제품
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
|
|
1,754재고 상태
|
|
|
₩13,908
|
|
|
₩9,500
|
|
|
₩7,843.2
|
|
|
₩7,128.8
|
|
|
₩6,520.8
|
|
|
₩6,520.8
|
|
최소: 1
배수: 1
:
1,800
|
|
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 10 V, + 22 V
|
3 V
|
31 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
- SCT040TO65G3
- STMicroelectronics
-
1:
₩14,576.8
-
37재고 상태
-
1,800예상 2026-07-13
-
신제품
|
Mouser 부품 번호
511-SCT040TO65G3
신제품
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
|
|
37재고 상태
1,800예상 2026-07-13
|
|
|
₩14,576.8
|
|
|
₩10,974.4
|
|
|
₩8,147.2
|
|
|
₩8,116.8
|
|
|
₩7,843.2
|
|
|
₩7,600
|
|
최소: 1
배수: 1
:
1,800
|
|
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
1 Channel
|
650 V
|
35 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
42.5 nC
|
- 55 C
|
+ 175 C
|
288 W
|
Enhancement
|
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
₩28,120
-
505재고 상태
|
Mouser 부품 번호
511-SCT018W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
505재고 상태
|
|
|
₩28,120
|
|
|
₩21,523.2
|
|
|
₩16,461.6
|
|
|
₩15,002.4
|
|
|
₩12,494.4
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
77 nC
|
- 55 C
|
+ 200 C
|
398 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4
- STMicroelectronics
-
1:
₩17,556
-
537재고 상태
|
Mouser 부품 번호
511-SCT040W65G3-4
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
537재고 상태
|
|
|
₩17,556
|
|
|
₩10,533.6
|
|
|
₩9,393.6
|
|
|
₩8,922.4
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
37.5 nC
|
- 55 C
|
+ 200 C
|
240 W
|
Enhancement
|
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4AG
- STMicroelectronics
-
1:
₩20,398.4
-
481재고 상태
|
Mouser 부품 번호
511-SCT040W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
481재고 상태
|
|
|
₩20,398.4
|
|
|
₩14,789.6
|
|
|
₩12,646.4
|
|
|
₩10,761.6
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
37.5 nC
|
- 55 C
|
+ 200 C
|
240 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
₩25,095.2
-
151재고 상태
|
Mouser 부품 번호
511-SCT018H65G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
151재고 상태
|
|
|
₩25,095.2
|
|
|
₩17,768.8
|
|
|
₩16,978.4
|
|
|
₩15,139.2
|
|
|
₩12,357.6
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
79.4 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055W65G3-4AG
- STMicroelectronics
-
1:
₩22,511.2
-
30재고 상태
-
600주문 중
|
Mouser 부품 번호
511-SCT055W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
30재고 상태
600주문 중
|
|
|
₩22,511.2
|
|
|
₩17,920.8
|
|
|
₩16,264
|
|
|
₩10,731.2
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
32 nC
|
- 55 C
|
+ 200 C
|
210 W
|
Enhancement
|
AEC-Q100
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
- SCT040H65G3AG
- STMicroelectronics
-
1:
₩17,206.4
-
879재고 상태
|
Mouser 부품 번호
511-SCT040H65G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
|
|
879재고 상태
|
|
|
₩17,206.4
|
|
|
₩11,932
|
|
|
₩10,077.6
|
|
|
₩9,408.8
|
|
최소: 1
배수: 1
:
1,000
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
40 mOhms
|
- 10 V, + 22 V
|
4.2 V
|
39.5 nC
|
- 55 C
|
+ 175 C
|
221 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3-7
- STMicroelectronics
-
1,000:
₩13,254.4
-
비재고 리드 타임 21 주
-
신제품
|
Mouser 부품 번호
511-SCT018H65G3-7
신제품
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
비재고 리드 타임 21 주
|
|
최소: 1,000
배수: 1,000
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
-10 V, 22 V
|
4.2 V
|
79.4 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
|
|
대한민국