DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.

결과: 113
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 기술 장착 스타일 패키지/케이스 트랜지스터 극성 채널 수 Vds - 드레인 소스 항복 전압 Id - 연속 드레인 전류 Rds On - 드레인 소스 저항 Vgs - 게이트 소스 전압 Vgs th - 게이트 소스 역치 전압 Qg - 게이트 전하 최저 작동온도 최고 작동온도 Pd - 전력 발산 채널 모드 상표명 포장
Toshiba MOSFET Power MOSFET N-Channel 1,627재고 상태
최소: 1
배수: 1
: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 8 A 440 mOhms - 30 V, 30 V 3 V 22 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET Power MOSFET N-Channel 7,464재고 상태
최소: 1
배수: 1
: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 5.8 A 890 mOhms - 30 V, 30 V 2.5 V 11 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET N-Ch 800V 1400pF 23nC 11.5A 45W 2,178재고 상태
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 11.5 A 380 mOhms - 20 V, 20 V 3 V 23 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube
Toshiba MOSFET Pb-F POWER MOSFET TRANSISTOR DPAK(OS) PD=130W F=1MHZ 966재고 상태
최소: 1
배수: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 15.8 A 230 mOhms - 30 V, 30 V 3 V 43 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET Power MOSFET N-Channel 151재고 상태
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 8 A 440 mOhms - 30 V, 30 V 3 V 22 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube

Toshiba MOSFET MOSFET NChannel 068ohm DTMOS 6재고 상태
최소: 1
배수: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 35 A 68 mOhms - 30 V, 30 V 3.5 V 100 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube
Toshiba MOSFET MOSFET NCh trr100 nsn 0.25ohm DTMOS 31재고 상태
최소: 1
배수: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 13.7 A 250 mOhms - 30 V, 30 V 4.5 V 40 nC - 55 C + 150 C 40 W Enhancement DTMOSIV Tube

Toshiba MOSFET Power MOSFET N-Channel 34재고 상태
최소: 1
배수: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 17.3 A 170 mOhms - 30 V, 30 V 2.5 V 45 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tube
Toshiba MOSFET Pb-F POWER MOSFET TRANSISTOR DPAK(OS) PD=80W F=1MHZ 1,788재고 상태
최소: 1
배수: 1
: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 7.8 A 670 mOhms - 30 V, 30 V 2.5 V 16 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ 516재고 상태
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6.5 A 950 mOhms - 20 V, 20 V 3 V 13 nC - 55 C + 150 C 35 W Enhancement DTMOSIV Tube
Toshiba MOSFET Pb-F POWER MOSFET TRANSISTOR DTMOS DFN 8?8-OS PD=139W F=1MHZ 2,487재고 상태
최소: 1
배수: 1
: 2,500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 15.8 A 245 mOhms - 30 V, 30 V 3 V 43 nC - 55 C + 150 C 139 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET 600V DTMOS6 TO-247 40mohm 471재고 상태
최소: 1
배수: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 40 mOhms - 30 V, 30 V 4 V 85 nC + 150 C 297 W Enhancement Tube
Toshiba MOSFET 600V DTMOS6 TO-247 80mohm 149재고 상태
최소: 1
배수: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 80 mOhms - 30 V, 30 V 4 V 43 nC + 150 C 211 W Enhancement Tube
Toshiba MOSFET 600V DTMOS6 TO-247 125mohm 135재고 상태
최소: 1
배수: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 125 mOhms - 30 V, 30 V 4 V 28 nC + 150 C 150 W Enhancement Tube
Toshiba MOSFET N-Ch DTMOSIV 600V 240W 3000pF 30.8A 2,561재고 상태
최소: 1
배수: 1
: 2,500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 30.8 A 87 mOhms - 30 V, 30 V 3 V 105 nC + 150 C 240 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC 4,523재고 상태
최소: 1
배수: 1
: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 6.2 A 820 mOhms - 30 V, 30 V 2.7 V 12 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET N-Ch 600V 9.7A 30W DTMOSIV 700pF 20nC 57재고 상태
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9.7 A 327 mOhms - 30 V, 30 V 3.7 V 20 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC 70재고 상태
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9.7 A 380 mOhms - 30 V, 30 V 3.7 V 20 nC - 55 C + 150 C 100 W Enhancement DTMOSIV Tube
Toshiba MOSFET MOSFET NChannel 0.33ohm DTMOS 190재고 상태
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 11.1 A 330 mOhms - 30 V, 30 V 3.5 V 25 nC - 55 C + 150 C 35 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch MOS 12A 500V 45W 1350pF 0.52 194재고 상태
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 12 A 520 mOhms - 30 V, 30 V 2 V 25 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch 15.8A 40W FET 600V 1350pF 43nC 174재고 상태
최소: 1
배수: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 15.8 A 190 mOhms - 30 V, 30 V 4.5 V 43 nC - 55 C + 150 C 40 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch 15.8A 130W FET 600V 1350pF 38nC 77재고 상태
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 15.8 A 160 mOhms - 30 V, 30 V 3.7 V 30 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube
Toshiba MOSFET TO-3PN(OS) PD=130W 1MHz PWR MOSFET TRNS 73재고 상태
최소: 1
배수: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 15.8 A 230 mOhms - 30 V, 30 V 4.5 V 43 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube
Toshiba MOSFET MOSFET NChtrr100ns 0.25ohm DTMOS 84재고 상태
최소: 1
배수: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 20 A 150 mOhms - 30 V, 30 V 4.5 V 55 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube
Toshiba MOSFET TO-220 PD=165W 1MHz PWR MOSFET TRNS 80재고 상태
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20 A 175 mOhms - 30 V, 30 V 4.5 V 55 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tube