|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055W65G3-4AG
- STMicroelectronics
-
1:
₩18,529.6
-
57재고 상태
|
Mouser 부품 번호
511-SCT055W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
57재고 상태
|
|
|
₩18,529.6
|
|
|
₩15,081.2
|
|
|
₩12,565.2
|
|
|
₩9,146.4
|
|
|
견적
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
32 nC
|
- 55 C
|
+ 200 C
|
210 W
|
Enhancement
|
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
- SCT070H120G3AG
- STMicroelectronics
-
1:
₩18,011.6
-
85재고 상태
|
Mouser 부품 번호
511-SCT070H120G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
|
|
85재고 상태
|
|
|
₩18,011.6
|
|
|
₩12,609.6
|
|
|
₩10,848.4
|
|
|
₩10,833.6
|
|
|
₩8,850.4
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
- SCT070HU120G3AG
- STMicroelectronics
-
1:
₩20,202
-
73재고 상태
-
1,200예상 2026-03-16
|
Mouser 부품 번호
511-SCT070HU120G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
|
|
73재고 상태
1,200예상 2026-03-16
|
|
|
₩20,202
|
|
|
₩14,148.8
|
|
|
₩12,520.8
|
|
|
₩10,212
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
- SCT1000N170
- STMicroelectronics
-
1:
₩13,142.4
-
592재고 상태
|
Mouser 부품 번호
511-SCT1000N170
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
|
|
592재고 상태
|
|
|
₩13,142.4
|
|
|
₩8,998.4
|
|
|
₩6,645.2
|
|
|
₩5,831.2
|
|
|
₩5,816.4
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.7 kV
|
6 A
|
1 Ohms
|
- 10 V, + 25 V
|
2.1 V
|
14 nC
|
- 55 C
|
+ 200 C
|
120 W
|
Enhancement
|
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
- SCT20N120AG
- STMicroelectronics
-
1:
₩23,532
-
510재고 상태
|
Mouser 부품 번호
511-SCT20N120AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
|
|
510재고 상태
|
|
|
₩23,532
|
|
|
₩17,360.4
|
|
|
₩12,091.6
|
|
|
보기
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
|
N-Channel
|
1 Channel
|
1.2 kV
|
20 A
|
239 mOhms
|
- 20 V, + 20 V
|
3.5 V
|
45 nC
|
- 55 C
|
+ 200 C
|
175 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL90N65G2V
- STMicroelectronics
-
1:
₩43,156.8
-
1,597재고 상태
|
Mouser 부품 번호
511-SCTL90N65G2V
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
1,597재고 상태
|
|
|
₩43,156.8
|
|
|
₩33,018.8
|
|
|
₩26,965.6
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
1 Channel
|
650 V
|
40 A
|
18 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 175 C
|
935 W
|
Enhancement
|
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
- SCTW40N120G2VAG
- STMicroelectronics
-
1:
₩25,456
-
593재고 상태
|
Mouser 부품 번호
511-SCTW40N120G2VAG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
|
|
593재고 상태
|
|
|
₩25,456
|
|
|
₩15,791.6
|
|
|
₩13,793.6
|
|
|
₩13,778.8
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
100 mOhms
|
- 10 V, + 22 V
|
4.9 V
|
61 nC
|
- 55 C
|
+ 200 C
|
278 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H
- SCTW100N65G2AG
- STMicroelectronics
-
1:
₩37,932.4
-
317재고 상태
-
NRND
|
Mouser 부품 번호
511-SCTW100N65G2AG
NRND
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H
|
|
317재고 상태
|
|
|
₩37,932.4
|
|
|
₩33,655.2
|
|
|
₩33,300
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
650 V
|
100 A
|
69 mOhms
|
- 10 V, + 22 V
|
5 V
|
162 nC
|
- 55 C
|
+ 200 C
|
420 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
- SCTWA40N12G24AG
- STMicroelectronics
-
1:
₩25,988.8
-
90재고 상태
|
Mouser 부품 번호
511-SCTWA40N12G24AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
|
|
90재고 상태
|
|
|
₩25,988.8
|
|
|
₩18,470.4
|
|
|
₩14,237.6
|
|
|
₩14,148.8
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
33 A
|
105 mOhms
|
- 18 V, + 18 V
|
5 V
|
63 nC
|
- 55 C
|
+ 200 C
|
290 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3AG
- STMicroelectronics
-
1:
₩25,396.8
-
9재고 상태
-
2,000예상 2026-10-12
-
신제품
|
Mouser 부품 번호
511-SCT025H120G3AG
신제품
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
9재고 상태
2,000예상 2026-10-12
|
|
|
₩25,396.8
|
|
|
₩18,026.4
|
|
|
₩16,827.6
|
|
|
₩13,734.4
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
- SCTWA90N65G2V-4
- STMicroelectronics
-
1:
₩42,757.2
-
151재고 상태
|
Mouser 부품 번호
511-SCTWA90N65G2V-4
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
|
|
151재고 상태
|
|
|
₩42,757.2
|
|
|
₩32,589.6
|
|
|
₩30,088.4
|
|
|
₩25,988.8
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
119 A
|
24 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 200 C
|
565 W
|
Enhancement
|
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
- SCTWA70N120G2V-4
- STMicroelectronics
-
1:
₩43,674.8
-
28재고 상태
|
Mouser 부품 번호
511-SCTWA70N120G2V-4
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
|
|
28재고 상태
|
|
|
₩43,674.8
|
|
|
₩31,302
|
|
|
₩30,636
|
|
|
보기
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
HIP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
91 A
|
30 mOhms
|
- 10 V, + 22 V
|
2.45 V
|
150 nC
|
- 55 C
|
+ 200 C
|
547 W
|
Enhancement
|
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
- SCT015W120G3-4AG
- STMicroelectronics
-
1:
₩35,860.4
-
600예상 2026-10-26
|
Mouser 부품 번호
511-SCT015W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
|
|
600예상 2026-10-26
|
|
|
₩35,860.4
|
|
|
₩29,348.4
|
|
|
₩25,914.8
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
15 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
167 nC
|
- 55 C
|
+ 200 C
|
673 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
₩26,891.6
-
1,200주문 중
|
Mouser 부품 번호
511-SCT025W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
1,200주문 중
주문 중:
600 예상 2026-05-01
600 예상 2026-08-10
|
|
|
₩26,891.6
|
|
|
₩21,534
|
|
|
₩18,618.4
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027HU65G3AG
- STMicroelectronics
-
1:
₩19,994.8
-
400예상 2027-01-04
-
신제품
|
Mouser 부품 번호
511-SCT027HU65G3AG
신제품
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
400예상 2027-01-04
|
|
|
₩19,994.8
|
|
|
₩14,918.4
|
|
|
₩12,905.6
|
|
|
₩12,224.8
|
|
|
₩10,374.8
|
|
최소: 1
배수: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
- SCT040H120G3AG
- STMicroelectronics
-
1:
₩18,766.4
-
996예상 2026-04-22
|
Mouser 부품 번호
511-SCT040H120G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
|
|
996예상 2026-04-22
|
|
|
₩18,766.4
|
|
|
₩13,157.2
|
|
|
₩11,440.4
|
|
|
₩11,425.6
|
|
|
₩9,338.8
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
54 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055HU65G3AG
- STMicroelectronics
-
1:
₩18,514.8
-
1,113예상 2026-03-18
|
Mouser 부품 번호
511-SCT055HU65G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
1,113예상 2026-03-18
|
|
|
₩18,514.8
|
|
|
₩13,053.6
|
|
|
₩11,322
|
|
|
₩9,250
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 10 V, + 22 V
|
4.2 V
|
29 nC
|
- 55 C
|
+ 175 C
|
185 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
- SCT10N120AG
- STMicroelectronics
-
1:
₩13,586.4
-
844예상 2026-11-23
|
Mouser 부품 번호
511-SCT10N120AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
|
|
844예상 2026-11-23
|
|
|
₩13,586.4
|
|
|
₩7,696
|
|
|
₩6,112.4
|
|
|
₩6,097.6
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
|
N-Channel
|
1 Channel
|
1.2 kV
|
12 A
|
500 mOhms
|
- 10 V, + 25 V
|
3.5 V
|
22 nC
|
- 55 C
|
+ 200 C
|
150 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3-7
- STMicroelectronics
-
1:
₩24,834.4
-
100주문 중
-
신제품
|
Mouser 부품 번호
511-SCT025H120G3-7
신제품
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
100주문 중
|
|
|
₩24,834.4
|
|
|
₩19,210.4
|
|
|
₩16,605.6
|
|
|
₩16,605.6
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
- SCT040W120G3-4
- STMicroelectronics
-
1:
₩16,842.4
-
100주문 중
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신제품
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Mouser 부품 번호
511-SCT040W120G3-4
신제품
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STMicroelectronics
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SiC MOSFET Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
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100주문 중
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₩16,842.4
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₩13,719.6
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₩11,425.6
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₩10,182.4
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₩8,643.2
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최소: 1
배수: 1
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Through Hole
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HiP247-4
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N-Channel
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1 Channel
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1.2 kV
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40 A
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54 mOhms
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- 10 V, + 22 V
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3.1 V
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56 nC
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- 55 C
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+ 200 C
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312 W
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Enhancement
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AEC-Q101
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SiC MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247
- SCTWA90N65G2V
- STMicroelectronics
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1:
₩41,780.4
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69예상 2026-03-16
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Mouser 부품 번호
511-SCTWA90N65G2V
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STMicroelectronics
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SiC MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247
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69예상 2026-03-16
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₩41,780.4
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₩27,069.2
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₩25,900
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견적
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견적
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최소: 1
배수: 1
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Through Hole
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HiP-247-3
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N-Channel
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1 Channel
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650 V
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119 A
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24 mOhms
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- 10 V, + 22 V
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5 V
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157 nC
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- 55 C
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+ 200 C
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565 W
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Enhancement
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SiC MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A
- SCT011H75G3AG
- STMicroelectronics
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1:
₩34,365.6
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비재고 리드 타임 16 주
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신제품
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Mouser 부품 번호
511-SCT011H75G3AG
신제품
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STMicroelectronics
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SiC MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A
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비재고 리드 타임 16 주
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₩34,365.6
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₩28,652.8
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₩28,638
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₩23,976
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보기
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견적
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최소: 1
배수: 1
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SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A
- SCT014HU65G3AG
- STMicroelectronics
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600:
₩20,942
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비재고 리드 타임 18 주
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신제품
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Mouser 부품 번호
511-SCT014HU65G3AG
신제품
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STMicroelectronics
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SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A
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비재고 리드 타임 18 주
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₩20,942
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견적
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견적
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최소: 600
배수: 600
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SiC MOSFET Silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in a TO-LL package
- SCT014TO65G3
- STMicroelectronics
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1,800:
₩16,250.4
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비재고 리드 타임 19 주
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신제품
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Mouser 부품 번호
511-SCT014TO65G3
신제품
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STMicroelectronics
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SiC MOSFET Silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in a TO-LL package
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비재고 리드 타임 19 주
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최소: 1,800
배수: 1,800
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SiC MOSFET Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3-7
- STMicroelectronics
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1,000:
₩14,578
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비재고 리드 타임 16 주
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신제품
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Mouser 부품 번호
511-SCT018H65G3-7
신제품
|
STMicroelectronics
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SiC MOSFET Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
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비재고 리드 타임 16 주
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최소: 1,000
배수: 1,000
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SMD/SMT
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H2PAK-7
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N-Channel
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1 Channel
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650 V
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55 A
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27 mOhms
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-10 V, 22 V
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4.2 V
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79.4 nC
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- 55 C
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+ 175 C
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385 W
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Enhancement
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대한민국