SiC MOSFET

 SiC MOSFET
SiC MOSFETs are available at Mouser Electronics from industry leading manufacturers. Mouser is an authorized distributor for many SiC MOSFET manufacturers including Infineon, Microchip, Navitas Semiconductor, onsemi, ROHM Semiconductor, STMicroelectronics, Wolfspeed & more. Please view our large selection of SiC MOSFETs below.
결과: 1,274
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 장착 스타일 패키지/케이스 트랜지스터 극성 채널 수 Vds - 드레인 소스 항복 전압 Id - 연속 드레인 전류 Rds On - 드레인 소스 저항 Vgs - 게이트 소스 전압 Vgs th - 게이트 소스 역치 전압 Qg - 게이트 전하 최저 작동온도 최고 작동온도 Pd - 전력 발산 채널 모드 자격 상표명
Infineon Technologies SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology 187재고 상태
최소: 1
배수: 1

Through Hole PG-TO247-4-U07 N-Channel 1 Channel 1.2 kV 201 A 20 mOhms - 10 V, + 25 V 5.1 V 176 nC - 55 C + 175 C 711 W CoolSiC
Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 140재고 상태
최소: 1
배수: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 36 A 65 mhms - 7 V, + 23 V 5.6 V 24 nC - 55 C + 175 C 148 W Enhancement CoolSiC
APC-E SiC MOSFET 650V 50mR, TO-247-4L, Industrial Grade 288재고 상태
최소: 1
배수: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
Infineon Technologies SiC MOSFET CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK 70재고 상태
최소: 1
배수: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 36 A 65 mOhms - 7 V, + 23 V 5.6 V 24 nC - 55 C + 175 C 148 W Enhancement CoolSiC
APC-E SiC MOSFET 1200V 75mR, TO-247-4L, Automotive Grade 290재고 상태
최소: 1
배수: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
Infineon Technologies SiC MOSFET CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK 66재고 상태
최소: 1
배수: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 45 A 50 mOhms - 7 V, + 23 V 5.6 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET CoolSiC MOSFET 750 V G2 133재고 상태
최소: 1
배수: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 64 A 31 mOhms - 7 V, 23 V 5.6 V 49 nC - 55 C + 175 C 234 W Enhancement CoolSiC
IXYS SiC MOSFET 1200V 40mohm (65A a. 25C) SiC MOSFET in TO247-4L 100재고 상태
450예상 2026-06-02
최소: 1
배수: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 65 A 52 mOhms - 5 V, + 20 V 4.5 V 110 nC - 55 C + 175 C 375 W Enhancement
Infineon Technologies SiC MOSFET CoolSiC MOSFET 750 V G2 140재고 상태
최소: 1
배수: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 42 A 50 mOhms - 7 V, 23 V 5.6 V 30 nC - 55 C + 175 C 156 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET CoolSiC MOSFET 750 V G2 138재고 상태
1,000예상 2026-02-23
최소: 1
배수: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 34 A 65 mOhms - 7 V, 23 V 5.6 V 24 nC - 55 C + 175 C 135 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 119재고 상태
최소: 1
배수: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 53 A 41.3 mOhms - 7 V, + 23 V 5.6 V 37 nC - 55 C + 175 C 217 W Enhancement CoolSiC
APC-E SiC MOSFET 650V 50mR, TO-247-4L, Automotive Grade 270재고 상태
최소: 1
배수: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 140재고 상태
최소: 1
배수: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 45 A 50 mOhms - 7 V, + 23 V 5.6 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
IXYS SiC MOSFET 1200V 40mohm (65A a. 25C) SiC MOSFET in TO-263-7L 78재고 상태
800예상 2026-06-02
최소: 1
배수: 1
: 800

SMD/SMT TO-263-7L N-Channel 1 Channel 1.2 kV 65 A 53 mOhms - 5 V, + 20 V 4.5 V 110 nC - 55 C + 175 C 417 W Enhancement
APC-E SiC MOSFET 1200V 75mR, TO-247-4L, Industrial Grade 270재고 상태
최소: 1
배수: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
Infineon Technologies SiC MOSFET CoolSiC Automotive Power Device 750 V G2 28재고 상태
750예상 2026-03-26
최소: 1
배수: 1
: 750

SMD/SMT HD-SOP-22 N-Channel 1 Channel 750 V 53 A 65.6 mOhms - 7 V, 23 V 5.6 V 37 nC - 55 C + 175 C 217 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET CoolSiC MOSFET 750 V G2 118재고 상태
최소: 1
배수: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 50 A 41.3 mOhms - 7 V, 23 V 5.6 V 37 nC - 55 C + 175 C 189 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET CoolSiC MOSFET 750 V G2 140재고 상태
최소: 1
배수: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 29 A 78 mOhms - 7 V, 23 V 5.6 V 20 nC - 55 C + 175 C 116 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 1,165재고 상태
1,500주문 중
최소: 1
배수: 1
: 750

SMD/SMT HDSOP-22 N-Channel 1 Channel 650 V 154 A 13.1 mOhms - 7 V, + 23 V 5.6 V 113 nC - 55 C + 175 C 651 W Enhancement
Central Semiconductor SiC MOSFET 1700V Through-Hole MOSFET N-Channel SiC 30재고 상태
최소: 1
배수: 1
Through Hole TO-247-3 N-Channel 1 Channel 1.7 kV 26 A 40 mOhms 20 V 2.4 V - 55 C + 175 C 28 W Depletion
Wolfspeed SiC MOSFET SiC, MOSFET, 21mohm, 1200V, TO-263-7 XL T&R, Industrial 243재고 상태
최소: 1
배수: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 248 A 35 mOhms - 8 V, + 19 V 3.8 V 169 nC - 40 C + 175 C 500 W Enhancement
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A 252재고 상태
600예상 2026-11-16
최소: 1
배수: 1
: 600

Infineon Technologies SiC MOSFET SIC_DISCRETE 799재고 상태
최소: 1
배수: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 36 A 60 mOhms - 7 V, + 23 V 5.7 V 31 nC - 55 C + 175 C 150 mW Enhancement CoolSiC
onsemi SiC MOSFET 750V/9MOSICFETG4TO263-7 688재고 상태
최소: 1
배수: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 106 A 9 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 375 W Enhancement SiC FET
onsemi SiC MOSFET 750V/18MOSICFETG4TO263-7 1,247재고 상태
최소: 1
배수: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 72 A 18 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 259 W Enhancement SiC FET