|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
- SCT016H120G3AG
- STMicroelectronics
-
1:
₩34,498.8
-
874재고 상태
-
신제품
|
Mouser 부품 번호
511-SCT016H120G3AG
신제품
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
|
|
874재고 상태
|
|
|
₩34,498.8
|
|
|
₩24,967.6
|
|
|
₩24,923.2
|
|
|
₩24,908.4
|
|
|
₩23,265.6
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
112 A
|
22 mOhms
|
- 10 V, + 22 V
|
3 V
|
150 nC
|
- 55 C
|
+ 175 C
|
652 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
- SCT027H65G3AG
- STMicroelectronics
-
1:
₩18,751.6
-
1,082재고 상태
-
신제품
|
Mouser 부품 번호
511-SCT027H65G3AG
신제품
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
|
|
1,082재고 상태
|
|
|
₩18,751.6
|
|
|
₩13,142.4
|
|
|
₩11,425.6
|
|
|
₩10,670.8
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
60 A
|
39.3 mOhms
|
- 10 V, + 22 V
|
3 V
|
48.6 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3AG
- STMicroelectronics
-
1:
₩25,396.8
-
9재고 상태
-
2,000예상 2026-10-12
-
신제품
|
Mouser 부품 번호
511-SCT025H120G3AG
신제품
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
9재고 상태
2,000예상 2026-10-12
|
|
|
₩25,396.8
|
|
|
₩18,026.4
|
|
|
₩16,827.6
|
|
|
₩15,702.8
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3-7
- STMicroelectronics
-
1:
₩24,849.2
-
100주문 중
-
신제품
|
Mouser 부품 번호
511-SCT025H120G3-7
신제품
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
100주문 중
|
|
|
₩24,849.2
|
|
|
₩19,225.2
|
|
|
₩16,635.2
|
|
|
₩16,620.4
|
|
|
₩14,696.4
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
- SCT070H120G3-7
- STMicroelectronics
-
1,000:
₩8,569.2
-
비재고 리드 타임 16 주
-
신제품
|
Mouser 부품 번호
511-SCT070H120G3-7
신제품
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
|
|
비재고 리드 타임 16 주
|
|
최소: 1,000
배수: 1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 10 V, + 22 V
|
3 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
|
|
대한민국
