Infineon Technologies 1200V CoolSiC 5세대 Schottky 다이오드

Infineon 1200V CoolSiC Generation 5 Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Generation 5 target solar inverters, UPS, 3P SMPS, energy storage and motor drives applications. With Generation 5, reduction of forward voltage and its temperature dependency brings a new level of system efficiency. Moreover, an improved thermal performance compared to a silicon based solution increases system reliability and the possibility to increase output power in a given form factor. Combined with a Si HighSpeed 3 IGBT, they deliver 40% lower Si IGBT turn-on losses and reduced EMI.

Infineon Technologies Gen 5 1200V CoolSiC Schottky Diodes offer improved thermal performance compared to a silicon-based solution increasing system reliability and the possibility to increase output power in a given form factor. Combined with a Si HighSpeed 3 IGBT, they deliver 40% lower Si IGBT turn-on losses and reduced EMI.

특징

  • Zero diode turn-off loss
  • Improved thermal performance and lowered static losses
  • 2A up to 40A rated current
  • System efficiency improvement
  • 30% higher output power over Si diodes solution
  • High system reliability

애플리케이션

  • Solar, UPS, SMPS, Storage, Motor Drives, Welding
  • Micro Inverter, String Inverter, PFC Stage in UPS, Vienna Rectifier in UPS

비디오

Block Diagram

블록 선도 - Infineon Technologies 1200V CoolSiC 5세대 Schottky 다이오드
게시일: 2016-02-09 | 갱신일: 2024-01-10