DRAM

결과: 2,723
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 타입 메모리 크기 데이터 버스 너비 최대 클록 주파수 패키지/케이스 조직 액세스 시간 공급 전압 - 최소 공급 전압 - 최대 최저 작동온도 최고 작동온도 시리즈 포장
Alliance Memory DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin TSOPII, 166 Mhz, Industrial temp - Tray
216예상 2026-08-14
최소: 1
배수: 1

SDRAM 128 Mbit 16 bit 166 MHz TSOP-II-54 8 M x 16 5 ns 3 V 3.6 V - 40 C + 85 C Tray
ISSI IS43LQ16256B-062BLI
ISSI DRAM 4G, 1.06-1.17/1.70-1.95V, LPDDR4, 256Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS
270예상 2027-07-28
최소: 1
배수: 1

ISSI IS66WVH32M8DALL-166B1LI
ISSI DRAM 256Mb, HyperRAM, 32Mbx8, 1.8V, 166MHz, 24-ball TFBGA, RoHS
960주문 중
최소: 1
배수: 1
HyperRAM 256 Mbit 8 bit 166 MHz 32 M x 8 36 ns 1.7 V 1.95 V - 40 C + 85 C
ISSI IS66WVH16M8DALL-166B1LI
ISSI DRAM 128Mb, HyperRAM, 16Mbx8, 1.8V, 166MHz, 24-ball TFBGA, RoHS
841주문 중
최소: 1
배수: 1
HyperRAM 128 Mbit 8 bit 166 MHz TFBGA-24 16 M x 8 40 ns 1.7 V 1.95 V - 40 C + 85 C
ISSI IS43LR16128B-5BLI
ISSI DRAM 2G, 1.8V, Mobile DDR, 128Mx16, 200Mhz, 60 ball BGA (8mmx10mm) RoHS, IT
600예상 2026-12-14
최소: 1
배수: 1

BGA-60
ISSI IS43LR16640C-5BLI
ISSI DRAM 1G, 1.8V, Mobile DDR, 64Mx16, 200Mhz, 60 ball BGA (8mmx10mm) RoHS, IT
280주문 중
최소: 1
배수: 1

BGA-60
ISSI IS46QR16512A-075VBLA2
ISSI DRAM Automotive (Tc: -40 to +105C), 8G, 1.2V, DDR4, 512Mx16, 2666MT/s at 19-19-19, 96 ball BGA (10mm x14mm) RoHS, IT
136예상 2026-12-16
최소: 1
배수: 1

BGA-96
Alliance Memory AS4C128M16MD2A-25BIN
Alliance Memory DRAM LPDDR2, 2G, 128M X 16, 1.2V, 134ball BGA A-DIE INDUSTRIAL TEMP - Tray
121주문 중
최소: 1
배수: 1

SDRAM Mobile - LPDDR2 2 Gbit 16 bit 400 MHz FBGA-134 128 M x 16 5.5 ns 1.7 V 1.95 V - 40 C + 85 C AS4C128M16MD2A-25 Tray
Alliance Memory AS4C16M32MD1B-5BIN
Alliance Memory DRAM LPDDR1, 512Mb, 16M x 32 , 1.8V, 90-Ball BGA,200MHz, Industrial Temp ( -40C to 85C), B DIE
180주문 중
최소: 1
배수: 1

Tray
SMARTsemi DRAM DDR4, 8Gb, 1Gbx8, 1600Mhz, 3200Mbps, 1.2V, 78-ball FBGA, Commercial temp 2,664구매 가능한 공장 재고품
최소: 1
배수: 1

SDRAM - DDR4 8 Gbit 8 bit 1.6 GHz FBGA-78 1 G x 8 1.14 V 1.26 V 0 C + 85 C
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 143Mhz, 86 pin TSOP II, RoHS
108예상 2026-10-28
최소: 1
배수: 1

SDRAM 512 Mbit 32 bit 167 MHz TSOP-II-86 16 M x 32 6 ns 3 V 3.6 V 0 C + 70 C IS42S32160F
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 143Mhz, 86 pin TSOP II RoHS
24주문 중
최소: 1
배수: 1

SDRAM 256 Mbit 32 bit 143 MHz TSOP-II-86 8 M x 32 6.5 ns 3 V 3.6 V 0 C + 70 C IS42S32800J Tray
ISSI DRAM 512M 64Mx8 400MHz DDR2 1.8V
242예상 2026-10-12
최소: 1
배수: 1

SDRAM - DDR2 512 Mbit 8 bit 400 MHz BGA-60 64 M x 8 400 ps 1.7 V 1.9 V - 40 C + 85 C IS43DR86400E
ISSI DRAM 512M 1.2/1.8V 32Mx16 400MHz 134ball BGA
171예상 2026-08-10
최소: 1
배수: 1

SDRAM Mobile - LPDDR2 512 Mbit 16 bit 400 MHz FBGA-134 32 M x 16 1.14 V 1.95 V - 40 C + 85 C IS43LD32160A
ISSI DRAM 1G 32Mx32 400MHz LPDDR2 1.2/1.8V
32예상 2027-05-05
최소: 1
배수: 1

SDRAM Mobile - LPDDR2 1 Gbit 32 bit 400 MHz FBGA-134 32 M x 32 1.14 V 1.95 V - 40 C + 85 C IS43LD32320C Reel
ISSI DRAM 2G 128Mx16 1600MT/s DDR3L 1.35V
10주문 중
최소: 1
배수: 1

SDRAM - DDR3L 2 Gbit 16 bit 800 MHz BGA-96 128 M x 16 20 ns 1.283 V 1.45 V 0 C + 95 C IS43TR16128CL Tray
ISSI DRAM 256M, 3.3V, SDRAM, 16Mx16, 143Mhz, 54 ball BGA (8mmx8mm) RoHS
348예상 2026-08-07
최소: 1
배수: 1

SDRAM 256 Mbit 8 bit/16 bit 143 MHz BGA-54 32 M x 8/16 M x 16 5.5 ns 3 V 3.6 V 0 C + 70 C
ISSI DRAM 256M, 3.3V, SDRAM, 16Mx16, 143MHz, 54 pin TSOP II RoHS
103예상 2026-08-05
최소: 1
배수: 1

SDRAM 256 Mbit 8 bit/16 bit 143 MHz TSOP-II-54 32 M x 8/16 M x 16 5.5 ns 3 V 3.6 V 0 C + 70 C
ISSI DRAM 64M, 3.3V, SDRAM, 2Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS, IT
240예상 2026-08-05
최소: 1
배수: 1

SDRAM 64 Mbit 32 bit 143 MHz BGA-90 2 M x 32 5.4 ns 3 V 3.6 V - 40 C + 85 C
ISSI DRAM 128M, 3.3V, SDRAM, 4Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS, IT
240예상 2026-08-10
최소: 1
배수: 1

SDRAM 128 Mbit 32 bit 143 MHz BGA-90 4 M x 32 6.5 ns 3 V 3.6 V - 40 C + 85 C
ISSI DRAM 256M, 2.5V, DDR, 16Mx16, 200MHz, 60 ball BGA (8mmx13mm) RoHS, IT
190예상 2027-07-22
최소: 1
배수: 1

SDRAM - DDR BGA-60 IS43R16160F
ISSI DRAM 512M, 2.5V, DDR 32Mx16, 200MHz, 66 pin TSOP II (400 mil) RoHS, IT
108예상 2026-11-12
최소: 1
배수: 1

SDRAM - DDR TSOP-II-66 IS43R16320F
ISSI DRAM Automotive (-40 to +85C), 64M, 3.3V, SDRAM, 4Mx16, 166MHz, 54 pin TSOP II (400 mil) RoHS
108주문 중
최소: 1
배수: 1

SDRAM 64 Mbit 16 bit 166 MHz TSOP-II-54 4 M x 16 5.4 ns 3 V 3.6 V - 40 C + 85 C
ISSI DRAM Automotive (-40 to +85C), 128M, 3.3V, SDRAM, 4Mx32, 166MHz, 86 pin TSOP II (400 mil) RoHS
108주문 중
최소: 1
배수: 1

SDRAM 128 Mbit 32 bit 166 MHz TSOP-II-86 4 M x 32 5.4 ns 3 V 3.6 V - 40 C + 85 C
ISSI IS46DR81280C-25DBLA2
ISSI DRAM Automotive (Tc: -40 to +105C),1G, 1.8V, DDR2, 128Mx8, 400Mhz at CL5, 60 ball BGA, (8mmx10.5mm), RoHS
192예상 2027-07-22
최소: 1
배수: 1

BGA-60