DRAM

결과: 2,723
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 타입 메모리 크기 데이터 버스 너비 최대 클록 주파수 패키지/케이스 조직 액세스 시간 공급 전압 - 최소 공급 전압 - 최대 최저 작동온도 최고 작동온도 시리즈 포장
ISSI DRAM 1G, 1.35V, DDR3, 64Mx16, 1600MT/s at 10-10-10, 96 ball BGA (9mm x13mm) RoHS. IT
1,710주문 중
최소: 1
배수: 1

SDRAM - DDR3L 1 Gbit 16 bit 800 MHz BGA-96 64 M x 16 20 ns 1.283 V 1.45 V - 40 C + 95 C IS43TR16640CL
ISSI DRAM DDR2,2G,1.8V, RoHs 400MHz,128Mx16, IT
183주문 중
최소: 1
배수: 1

SDRAM - DDR2 2 Gbit 16 bit 400 MHz BGA-84 128 M x 16 400 ps 1.7 V 1.9 V - 40 C + 85 C IS43DR16128C Reel
ISSI DRAM DDR2,1G,1.8V, RoHs 400MHz, 64Mx16, IT
270주문 중
최소: 1
배수: 1

SDRAM - DDR2 1 Gbit 16 bit 400 MHz BGA-84 64 M x 16 400 ps 1.7 V 1.9 V - 40 C + 85 C IS43DR16640C
ISSI DRAM 256M, 3.3V, SDRAM, 16Mx16, 166Mhz, 54 ball BGA (8mmx8mm) RoHS
1,730주문 중
최소: 1
배수: 1

SDRAM 16 Mbit 16 bit 166 MHz BGA-54 1 M x 16 6 ns 3 V 3.6 V 0 C + 70 C IS42S16160J
ISSI DRAM 256M, 3.3V, SDRAM, 16Mx16, 143Mhz, 54 ball BGA (8mmx8mm) RoHS
696예상 2027-01-15
최소: 1
배수: 1

SDRAM 16 Mbit 16 bit 143 MHz BGA-54 1 M x 16 6 ns 3 V 3.6 V 0 C + 70 C IS42S16160J Reel
ISSI DRAM 256M, 3.3V, SDRAM, 16Mx16, 143Mhz, 54 ball BGA (8mmx8mm) RoHS, T&R
2,500예상 2026-10-01
최소: 1
배수: 1
: 2,500

SDRAM BGA-54 IS42S16160J Reel, Cut Tape, MouseReel
ISSI DRAM 512M, 3.3V, SDRAM, 32Mx16, 166MHz, 54 pin Copper TSOP II (400 mil) RoHS
1,404주문 중
최소: 1
배수: 1

SDRAM 512 Mbit 16 bit 167 MHz TSOP-II-54 32 M x 16 6 ns 3 V 3.6 V 0 C + 70 C IS42S16320F
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 143Mhz, 86 pin TSOP II, RoHS, IT
324주문 중
최소: 1
배수: 1

SDRAM 512 Mbit 32 bit 167 MHz TSOP-II-86 16 M x 32 6 ns 3 V 3.6 V - 40 C + 85 C IS42S32160F
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 166Mhz, 86 pin TSOP II RoHS
1,293주문 중
최소: 1
배수: 1

SDRAM 256 Mbit 32 bit 166 MHz TSOP-II-86 8 M x 32 6.5 ns 3 V 3.6 V 0 C + 70 C IS42S32800J
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS
1,200주문 중
최소: 1
배수: 1

SDRAM 256 Mbit 32 bit 143 MHz BGA-90 8 M x 32 6.5 ns 3 V 3.6 V 0 C + 70 C IS42S32800J
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 143Mhz, 86 pin TSOP II RoHS, IT, T&R
1,296주문 중
최소: 1
배수: 1
: 1,500

SDRAM 256 Mbit 32 bit 143 MHz TSOP-II-86 8 M x 32 6.5 ns 3 V 3.6 V - 40 C + 85 C IS42S32800J Reel, Cut Tape, MouseReel
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 143Mhz, 86 pin TSOP II RoHS, T&R
385주문 중
최소: 1
배수: 1
: 1,500
SDRAM 256 Mbit 32 bit 143 MHz TSOP-II-86 8 M x 32 6.5 ns 3 V 3.6 V 0 C + 70 C IS42S32800J Reel, Cut Tape, MouseReel
ISSI DRAM 256M, 3.3V, SDRAM, 32Mx8, 143MHz, 54 pin TSOP II (400 mil) RoHS, IT
414예상 2027-07-28
최소: 1
배수: 1

SDRAM 256 Mbit 8 bit 143 MHz TSOP-II-54 32 M x 8 5.4 ns 3 V 3.6 V - 40 C + 85 C IS42S83200J
ISSI DRAM 512M, 3.3V, SDRAM, 64Mx8, 143Mhz, 54 pin TSOP II RoHS, IT
1,512주문 중
최소: 1
배수: 1

SDRAM 512 Mbit 8 bit 143 MHz TSOP-II-54 64 M x 8 5.4 ns 3 V 3.6 V - 40 C + 85 C IS42S86400F
ISSI DRAM DDR2,2G,1.8V, RoHs 333MHz,128Mx16, IT
209주문 중
최소: 1
배수: 1

SDRAM - DDR2 2 Gbit 16 bit 333 MHz BGA-84 128 M x 16 450 ps 1.7 V 1.9 V 0 C + 85 C IS43DR16128C Reel
ISSI DRAM 512M 32Mx16 400MHz DDR2 1.8V
1,881주문 중
최소: 1
배수: 1

SDRAM - DDR2 512 Mbit 16 bit 400 MHz BGA-84 32 M x 16 400 ps 1.7 V 1.9 V 0 C + 85 C IS43DR16320E
ISSI DRAM 512M 32Mx16 400MHz DDR2 1.8V
441주문 중
최소: 1
배수: 1

SDRAM - DDR2 512 Mbit 16 bit 400 MHz BGA-84 32 M x 16 400 ps 1.7 V 1.9 V - 40 C + 85 C IS43DR16320E
ISSI DRAM 4G, 1.06-1.17/1.70-1.95V, LPDDR4, 256Mx16, 1866MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS
131주문 중
최소: 1
배수: 1

SDRAM - LPDDR4 4 Gbit 1.866 GHz FBGA-200 256 M x 16 3.5 ns 1.06 V 1.17 V - 40 C + 95 C
ISSI DRAM 8G, 1.06-1.17/1.70-1.95V, LPDDR4, 256Mx32, 1866MHz, 200 ball BGA (10mmx14.5mm) RoHS
136예상 2026-12-14
최소: 1
배수: 1

SDRAM - LPDDR4 8 Gbit 1.866 GHz FBGA-200 256 M x 32 3.5 ns 1.06 V 1.17 V - 40 C + 95 C
ISSI DRAM 4G, 1.35V, DDR3L, 256Mx16, 1866MT/s at 13-13-13, 96 ball BGA (9mm x13mm) RoHS
570주문 중
최소: 1
배수: 1

SDRAM - DDR3L 4 Gbit 16 bit 933 MHz BGA-96 256 M x 16 20 ns 1.425 V 1.575 V 0 C + 95 C IS43TR16256BL
ISSI DRAM 8G, 1.5V, DDR3, 1Gx8, 1600MT/s at 11-11-11, 78 ball BGA (10mm x 14mm) RoHS, IT
112주문 중
최소: 1
배수: 1

SDRAM - DDR3 8 Gbit 8 bit 800 MHz BGA-78 1 G x 8 20 ns 1.425 V 1.575 V - 40 C + 95 C IS43TR81024B
ISSI DRAM 8G, 1.35V, DDR3L, 1Gx8, 1600MT/s at 11-11-11, 78 ball BGA (10mm x 14mm) RoHS, IT
126주문 중
최소: 1
배수: 1

SDRAM - DDR3L 8 Gbit 8 bit 800 MHz BGA-78 1 G x 8 20 ns 1.283 V 1.45 V - 40 C + 95 C IS43TR81024B
ISSI DRAM 2G, 1.5V, DDR3L, 256Mx8, 1866MT/s at 13-13-13, 78 ball BGA (8mm x10.5mm) RoHS, IT
241예상 2026-08-04
최소: 1
배수: 1

SDRAM - DDR3 2 Gbit 8 bit BGA-78 256 M x 8 20 ns 1.425 V 1.575 V - 40 C + 95 C IS43TR82560D
ISSI DRAM 2G, 1.5V, DDR3L, 256Mx8, 1600MT/s at 11-11-11, 78 ball BGA (8mm x10.5mm) RoHS, IT
484예상 2027-02-04
최소: 1
배수: 1

SDRAM - DDR3 2 Gbit 8 bit 800 MHz BGA-78 256 M x 8 20 ns 1.425 V 1.575 V - 40 C + 95 C IS43TR82560D
ISSI DRAM 4G, 1.35V, DDR3L, 512Mx8, 1600MT/s at 11-11-11, 78 ball BGA (8mm x10.5mm) RoHS, IT
209주문 중
최소: 1
배수: 1

SDRAM - DDR3L 4 Gbit 8 bit 800 MHz BGA-78 512 M x 8 20 ns 1.425 V 1.575 V - 40 C + 95 C IS43TR85120BL