|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
- IMZC120R007M2HXKSA1
- Infineon Technologies
-
1:
₩55,588.8
-
187재고 상태
-
신제품
|
Mouser 부품 번호
726-IMZC120R007M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
|
|
187재고 상태
|
|
|
₩55,588.8
|
|
|
₩44,592.4
|
|
|
₩41,810
|
|
|
견적
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
PG-TO247-4-U07
|
N-Channel
|
1 Channel
|
1.2 kV
|
201 A
|
20 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
176 nC
|
- 55 C
|
+ 175 C
|
711 W
|
|
|
CoolSiC
|
|
|
|
SiC MOSFET 650V 50mR, TO-247-4L, Automotive Grade
- AAR050V065H2
- APC-E
-
1:
₩10,848.4
-
270재고 상태
-
신제품
|
Mouser 부품 번호
896-AAR050V065H2
신제품
|
APC-E
|
SiC MOSFET 650V 50mR, TO-247-4L, Automotive Grade
|
|
270재고 상태
|
|
|
₩10,848.4
|
|
|
₩7,666.4
|
|
|
₩6,364
|
|
|
₩5,683.2
|
|
|
₩5,298.4
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4L
|
N-Channel
|
1 Channel
|
650 V
|
44 A
|
65 mOhms
|
- 10 V, 25 V
|
4.2 V
|
45 nC
|
- 55 C
|
+ 175 C
|
198 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFET 1200V 75mR, TO-247-4L, Automotive Grade
- AAR075V120H2
- APC-E
-
1:
₩10,700.4
-
290재고 상태
-
신제품
|
Mouser 부품 번호
896-AAR075V120H2
신제품
|
APC-E
|
SiC MOSFET 1200V 75mR, TO-247-4L, Automotive Grade
|
|
290재고 상태
|
|
|
₩10,700.4
|
|
|
₩7,992
|
|
|
₩6,452.8
|
|
|
₩5,727.6
|
|
|
₩5,061.6
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4L
|
N-Channel
|
1 Channel
|
1.2 kV
|
27 A
|
98 mOhms
|
- 10 V, 25 V
|
4.2 V
|
40 nC
|
- 55 C
|
+ 175 C
|
151 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFET 1200V 75mR, TO-247-4L, Industrial Grade
- AMR075V120H2
- APC-E
-
1:
₩10,315.6
-
268재고 상태
-
신제품
|
Mouser 부품 번호
896-AMR075V120H2
신제품
|
APC-E
|
SiC MOSFET 1200V 75mR, TO-247-4L, Industrial Grade
|
|
268재고 상태
|
|
|
₩10,315.6
|
|
|
₩7,562.8
|
|
|
₩6,097.6
|
|
|
₩5,416.8
|
|
|
₩4,795.2
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4L
|
N-Channel
|
1 Channel
|
1.2 kV
|
27 A
|
98 mOhms
|
- 10 V, 25 V
|
4.2 V
|
40 nC
|
- 55 C
|
+ 175 C
|
151 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFET 650V 50mR, TO-247-4L, Industrial Grade
- AMR050V065H2
- APC-E
-
1:
₩10,715.2
-
288재고 상태
-
신제품
|
Mouser 부품 번호
896-AMR050V065H2
신제품
|
APC-E
|
SiC MOSFET 650V 50mR, TO-247-4L, Industrial Grade
|
|
288재고 상태
|
|
|
₩10,715.2
|
|
|
₩7,918
|
|
|
₩6,393.6
|
|
|
₩5,683.2
|
|
|
₩5,032
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4L
|
N-Channel
|
1 Channel
|
650 V
|
44 A
|
65 mOhms
|
- 10 V, 25 V
|
4.2 V
|
45 nC
|
- 55 C
|
+ 175 C
|
198 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFET 1700V Through-Hole MOSFET N-Channel SiC
- CDMS24740-170 SL PBFREE
- Central Semiconductor
-
1:
₩58,534
-
27재고 상태
-
신제품
|
Mouser 부품 번호
610-CDMS24740-170SL
신제품
|
Central Semiconductor
|
SiC MOSFET 1700V Through-Hole MOSFET N-Channel SiC
|
|
27재고 상태
|
|
|
₩58,534
|
|
|
₩47,892.8
|
|
|
₩42,313.2
|
|
|
보기
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.7 kV
|
26 A
|
40 mOhms
|
20 V
|
2.4 V
|
|
- 55 C
|
+ 175 C
|
28 W
|
Depletion
|
|
|
|
|
|
SiC MOSFET SIC MOSFET 900V TO247-4L
- NTH4L020N090SC1
- onsemi
-
1:
₩40,448.4
-
2,250재고 상태
|
Mouser 부품 번호
863-NTH4L020N090SC1
|
onsemi
|
SiC MOSFET SIC MOSFET 900V TO247-4L
|
|
2,250재고 상태
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
900 V
|
118 A
|
28 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
196 nC
|
- 55 C
|
+ 175 C
|
484 W
|
Enhancement
|
|
EliteSiC
|
|
|
|
SiC MOSFET SIC_DISCRETE
- AIMW120R060M1HXKSA1
- Infineon Technologies
-
1:
₩35,993.6
-
799재고 상태
|
Mouser 부품 번호
726-W120R060M1HXKSA1
|
Infineon Technologies
|
SiC MOSFET SIC_DISCRETE
|
|
799재고 상태
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
60 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
31 nC
|
- 55 C
|
+ 175 C
|
150 mW
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-3L 650V
- NTHL025N065SC1
- onsemi
-
1:
₩26,891.6
-
1,292재고 상태
|
Mouser 부품 번호
863-NTHL025N065SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-3L 650V
|
|
1,292재고 상태
|
|
|
₩26,891.6
|
|
|
₩21,415.6
|
|
|
₩19,758
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
99 A
|
28.5 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
164 nC
|
- 55 C
|
+ 175 C
|
348 W
|
Enhancement
|
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-4L 650V
- NVH4L025N065SC1
- onsemi
-
1:
₩37,518
-
428재고 상태
|
Mouser 부품 번호
863-NVH4L025N065SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-4L 650V
|
|
428재고 상태
|
|
|
₩37,518
|
|
|
₩30,428.8
|
|
|
₩29,466.8
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
99 A
|
28.5 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
164 nC
|
- 55 C
|
+ 175 C
|
348 W
|
Enhancement
|
|
EliteSiC
|
|
|
|
SiC MOSFET 20MW 1200V
- NVHL020N120SC1
- onsemi
-
1:
₩67,606.4
-
996재고 상태
|
Mouser 부품 번호
863-NVHL020N120SC1
|
onsemi
|
SiC MOSFET 20MW 1200V
|
|
996재고 상태
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
103 A
|
28 mOhms
|
- 15 V, + 25 V
|
4.3 V
|
203 nC
|
- 55 C
|
+ 175 C
|
535 W
|
Enhancement
|
AEC-Q101
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-3L 160MOHM 1200V
- NVHL160N120SC1
- onsemi
-
1:
₩18,307.6
-
2,424재고 상태
|
Mouser 부품 번호
863-NVHL160N120SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-3L 160MOHM 1200V
|
|
2,424재고 상태
|
|
|
₩18,307.6
|
|
|
₩11,322
|
|
|
₩10,611.6
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
17 A
|
224 mOhms
|
- 15 V, + 25 V
|
4.3 V
|
34 nC
|
- 55 C
|
+ 175 C
|
119 W
|
Enhancement
|
|
EliteSiC
|
|
|
|
SiC MOSFET SiC MOSFET BVDSS: >1000V TO263-7 TUBE 50PCS
- DMWSH120H90SCT7Q
- Diodes Incorporated
-
1:
₩17,197.6
-
35재고 상태
-
신제품
|
Mouser 부품 번호
621-DMWSH120H90SCT7Q
신제품
|
Diodes Incorporated
|
SiC MOSFET SiC MOSFET BVDSS: >1000V TO263-7 TUBE 50PCS
|
|
35재고 상태
|
|
|
₩17,197.6
|
|
|
₩11,514.4
|
|
|
₩9,708.8
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
38.2 A
|
90 mOhms
|
- 4 V, + 15 V
|
3.5 V
|
54.6 nC
|
- 55 C
|
+ 175 C
|
197 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFET SiC MOSFET BVDSS: >1000V TO263-7 TUBE 50PCS
- DMWSH120H90SCT7
- Diodes Incorporated
-
1:
₩14,208
-
50재고 상태
-
신제품
|
Mouser 부품 번호
621-DMWSH120H90SCT7
신제품
|
Diodes Incorporated
|
SiC MOSFET SiC MOSFET BVDSS: >1000V TO263-7 TUBE 50PCS
|
|
50재고 상태
|
|
|
₩14,208
|
|
|
₩9,235.2
|
|
|
₩7,681.2
|
|
|
₩7,474
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
38.2 A
|
90 mOhms
|
- 4 V, + 15 V
|
3.5 V
|
54.6 nC
|
- 55 C
|
+ 175 C
|
197 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFET 1200V SIC Mosfet 20mOHm 200C Temp TO247-4 AEC-Q101
- TM3B0020120A
- Coherent
-
1:
₩61,938
-
139재고 상태
|
Mouser 부품 번호
508-TM3B0020120
|
Coherent
|
SiC MOSFET 1200V SIC Mosfet 20mOHm 200C Temp TO247-4 AEC-Q101
|
|
139재고 상태
|
|
|
₩61,938
|
|
|
₩53,812.8
|
|
|
₩47,064
|
|
|
견적
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
115 A
|
24.3 mOhms
|
- 20 V, + 20 V
|
2.8 V
|
172 nC
|
- 55 C
|
+ 200 C
|
660 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFET SIC_DISCRETE
- AIMW120R035M1HXKSA1
- Infineon Technologies
-
1:
₩49,846.4
-
274재고 상태
|
Mouser 부품 번호
726-W120R035M1HXKSA1
|
Infineon Technologies
|
SiC MOSFET SIC_DISCRETE
|
|
274재고 상태
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
35 mOhms
|
- 7 V, + 23 V
|
4.5 V
|
59 nC
|
- 55 C
|
+ 175 C
|
228 W
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFET SIC_DISCRETE
- AIMW120R080M1XKSA1
- Infineon Technologies
-
1:
₩20,261.2
-
192재고 상태
|
Mouser 부품 번호
726-W120R080M1XKSA1
|
Infineon Technologies
|
SiC MOSFET SIC_DISCRETE
|
|
192재고 상태
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
33 A
|
80 mOhms
|
- 7 V, + 20 V
|
5.7 V
|
28 nC
|
- 55 C
|
+ 175 C
|
150 mW
|
Enhancement
|
|
CoolSiC
|
|
|
|
SiC MOSFET TO247 750V 105A N-CH SIC
- SCT4013DRC15
- ROHM Semiconductor
-
1:
₩51,444.8
-
402재고 상태
|
Mouser 부품 번호
755-SCT4013DRC15
|
ROHM Semiconductor
|
SiC MOSFET TO247 750V 105A N-CH SIC
|
|
402재고 상태
|
|
|
₩51,444.8
|
|
|
₩40,714.8
|
|
|
₩38,080.4
|
|
|
₩38,065.6
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
750 V
|
105 A
|
16.9 mOhms
|
- 4 V, + 21 V
|
4.8 V
|
170 nC
|
|
+ 175 C
|
312 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFET TO247 1.2KV 26A N-CH SIC
- SCT4062KEHRC11
- ROHM Semiconductor
-
1:
₩17,774.8
-
499재고 상태
|
Mouser 부품 번호
755-SCT4062KEHRC11
|
ROHM Semiconductor
|
SiC MOSFET TO247 1.2KV 26A N-CH SIC
|
|
499재고 상태
|
|
|
₩17,774.8
|
|
|
₩15,614
|
|
|
₩12,594.8
|
|
|
₩12,150.8
|
|
|
₩11,943.6
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247N-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
26 A
|
81 mOhms
|
- 4 V, + 21 V
|
4.8 V
|
64 nC
|
|
+ 175 C
|
115 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFET TO247 750V 34A N-CH SIC
- SCT4045DRC15
- ROHM Semiconductor
-
1:
₩19,062.4
-
751재고 상태
|
Mouser 부품 번호
755-SCT4045DRC15
|
ROHM Semiconductor
|
SiC MOSFET TO247 750V 34A N-CH SIC
|
|
751재고 상태
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
750 V
|
34 A
|
59 mOhms
|
- 4 V, + 21 V
|
4.8 V
|
63 nC
|
|
+ 175 C
|
115 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFET SIC MOS TO247-4L 650V
- NTH4L060N065SC1
- onsemi
-
1:
₩14,163.6
-
430재고 상태
|
Mouser 부품 번호
863-NTH4L060N065SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-4L 650V
|
|
430재고 상태
|
|
|
₩14,163.6
|
|
|
₩10,670.8
|
|
|
₩9,842
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
33 A
|
70 mOhms
|
- 18 V, + 18 V
|
4.3 V
|
74 nC
|
- 55 C
|
+ 175 C
|
88 W
|
Enhancement
|
|
EliteSiC
|
|
|
|
SiC MOSFET 1200V/23MOSICFETG4TO247-4
- UF4SC120023K4S
- onsemi
-
1:
₩30,991.2
-
768재고 상태
|
Mouser 부품 번호
431-UF4SC120023K4S
|
onsemi
|
SiC MOSFET 1200V/23MOSICFETG4TO247-4
|
|
768재고 상태
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
53 A
|
29 mOhms
|
- 20 V, + 20 V
|
6 V
|
37.8 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
|
SiC FET
|
|
|
|
SiC MOSFET SIC MOS TO247-4L 650V
- NTH4L075N065SC1
- onsemi
-
1:
₩12,654
-
776재고 상태
|
Mouser 부품 번호
863-NTH4L075N065SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-4L 650V
|
|
776재고 상태
|
|
|
₩12,654
|
|
|
₩9,383.2
|
|
|
₩8,450.8
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
38 A
|
85 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
61 nC
|
- 55 C
|
+ 175 C
|
148 W
|
Enhancement
|
|
EliteSiC
|
|
|
|
SiC MOSFET G3 1200V SiC-MOSFET TO-247 60mohm
- TW060N120C,S1F
- Toshiba
-
1:
₩33,980.8
-
224재고 상태
|
Mouser 부품 번호
757-TW060N120CS1F
|
Toshiba
|
SiC MOSFET G3 1200V SiC-MOSFET TO-247 60mohm
|
|
224재고 상태
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
182 mOhms
|
- 10 V, + 25 V
|
5 V
|
46 nC
|
- 55 C
|
+ 175 C
|
170 W
|
Enhancement
|
|
|
|
|
|
SiC MOSFET SIC MOS TO247-3L 650V
- NTHL060N065SC1
- onsemi
-
1:
₩14,504
-
569재고 상태
|
Mouser 부품 번호
863-NTHL060N065SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-3L 650V
|
|
569재고 상태
|
|
|
₩14,504
|
|
|
₩10,123.2
|
|
|
₩9,264.8
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
47 A
|
70 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
74 nC
|
- 55 C
|
+ 175 C
|
176 W
|
Enhancement
|
|
EliteSiC
|
|