Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.  

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기술
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패키지/케이스
트랜지스터 극성
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
데이터시트
252재고 상태
600예상 2026-11-16
최소: 1
배수: 1
릴: 600

SiC MOSFETS
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
데이터시트
969재고 상태
MouseReel 사용가능
최소: 1
배수: 1
릴: 1,000

SiC MOSFETS SiC SMD/SMT N-Channel
STMicroelectronics MOSFET N-channel 40 V, 0.85 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x
데이터시트
2,681재고 상태
MouseReel 사용가능
최소: 1
배수: 1
릴: 3,000

MOSFETs Si SMD/SMT PowerFLAT5x6-8 N-Channel
STMicroelectronics SiC MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
데이터시트
2,329재고 상태
MouseReel 사용가능
최소: 1
배수: 1
릴: 3,000

SiC MOSFETS SiC SMD/SMT PowerFLAT-5 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
데이터시트
922재고 상태
MouseReel 사용가능
최소: 1
배수: 1
릴: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
데이터시트
274재고 상태
600예상 2026-03-09
MouseReel 사용가능
최소: 1
배수: 1
릴: 600

SiC MOSFETS SiC SMD/SMT HU3PAK-7 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
데이터시트
739재고 상태
MouseReel 사용가능
최소: 1
배수: 1
릴: 600

SiC MOSFETS SiC SMD/SMT HU3PAK-7 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
데이터시트
513재고 상태
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole Hip247-4 N-Channel

STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
데이터시트
502재고 상태
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP247-3 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
데이터시트
1,082재고 상태
최소: 1
배수: 1
릴: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
데이터시트
1,011재고 상태
600예상 2027-01-04
MouseReel 사용가능
최소: 1
배수: 1
릴: 600

SiC MOSFETS SiC SMD/SMT HU3PAK-7 N-Channel


STMicroelectronics SiC MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
데이터시트
547재고 상태
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
데이터시트
641재고 상태
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP247-4 N-Channel
STMicroelectronics SiC MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
데이터시트
1,779재고 상태
최소: 1
배수: 1
릴: 1,800

SiC MOSFETS SiC SMD/SMT TOLL-8 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
데이터시트
14재고 상태
2,000예상 2026-10-12
최소: 1
배수: 1
릴: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics SiC MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
데이터시트
37재고 상태
최소: 1
배수: 1
릴: 1,800

SiC MOSFETS SiC SMD/SMT TOLL-8 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
데이터시트
160재고 상태
최소: 1
배수: 1
릴: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
데이터시트
202재고 상태
MouseReel 사용가능
최소: 1
배수: 1
릴: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
데이터시트
532재고 상태
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
데이터시트
353재고 상태
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
데이터시트
698재고 상태
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
데이터시트
629재고 상태
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP-247-3 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
데이터시트
473재고 상태
1,200예상 2026-04-20
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
데이터시트
142재고 상태
MouseReel 사용가능
최소: 1
배수: 1
릴: 600

SiC MOSFETS SiC SMD/SMT H2PAK-2 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
데이터시트
57재고 상태
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel