Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.  

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결과: 43
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트랜지스터 극성
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
데이터시트
12재고 상태
600예상 2027-03-26
최소: 1
배수: 1
: 600

SiC MOSFETS
STMicroelectronics SiC MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
데이터시트
2,311재고 상태
MouseReel 사용가능
최소: 1
배수: 1
: 3,000

SiC MOSFETS SiC SMD/SMT PowerFLAT-5 N-Channel
STMicroelectronics SiC MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
데이터시트
1,597재고 상태
MouseReel 사용가능
최소: 1
배수: 1
: 3,000

SiC MOSFETS SiC SMD/SMT PowerFLAT-5 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
데이터시트
425재고 상태
MouseReel 사용가능
최소: 1
배수: 1
: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
데이터시트
236재고 상태
600예상 2026-09-25
MouseReel 사용가능
최소: 1
배수: 1
: 600

SiC MOSFETS SiC SMD/SMT HU3PAK-7 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
데이터시트
866재고 상태
최소: 1
배수: 1
: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics SiC MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
데이터시트
1,754재고 상태
최소: 1
배수: 1
: 1,800

SiC MOSFETS SiC SMD/SMT TOLL-8 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
데이터시트
600재고 상태
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
데이터시트
465재고 상태
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
데이터시트
362재고 상태
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole Hip247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
데이터시트
287재고 상태
1,200예상 2026-08-31
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
데이터시트
406재고 상태
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP247-3 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
데이터시트
261재고 상태
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
데이터시트
360재고 상태
600예상 2026-07-31
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
데이터시트
499재고 상태
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP-247-3 N-Channel


STMicroelectronics SiC MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
데이터시트
517재고 상태
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
데이터시트
481재고 상태
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
데이터시트
284재고 상태
1,200예상 2026-08-10
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
데이터시트
43재고 상태
1,000예상 2026-08-17
최소: 1
배수: 1
: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
데이터시트
48재고 상태
1,000예상 2027-03-12
MouseReel 사용가능
최소: 1
배수: 1
: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
데이터시트
66재고 상태
MouseReel 사용가능
최소: 1
배수: 1
: 600

SiC MOSFETS SiC SMD/SMT H2PAK-2 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
데이터시트
55재고 상태
최소: 1
배수: 1
: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
데이터시트
846재고 상태
MouseReel 사용가능
최소: 1
배수: 1
: 1,000

SiC MOSFETS SiC SMD/SMT N-Channel
STMicroelectronics SiC MOSFET Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
데이터시트
483재고 상태
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP-247-3 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
데이터시트
394재고 상태
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole N-Channel