StrongIRFET™ Power MOSFETs

Infineon StrongIRFET™ Power MOSFET family is optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current-carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 

결과: 27
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 기술 장착 스타일 패키지/케이스 트랜지스터 극성 채널 수 Vds - 드레인 소스 항복 전압 Id - 연속 드레인 전류 Rds On - 드레인 소스 저항 Vgs - 게이트 소스 전압 Vgs th - 게이트 소스 역치 전압 Qg - 게이트 전하 최저 작동온도 최고 작동온도 Pd - 전력 발산 채널 모드 자격 상표명 포장
Infineon Technologies MOSFET N-Ch 30V 40A TISON-8 7,001재고 상태
최소: 1
배수: 1
: 5,000

Si SMD/SMT TISON-8 N-Channel 2 Channel 30 V 40 A 4.2 mOhms, 4.2 mOhms - 20 V, 20 V 1.2 V 17 nC - 55 C + 150 C 30 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFT 60V 79A 8.4mOhm 46nC Qg 18,455재고 상태
최소: 1
배수: 1
: 2,000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 60 V 79 A 7.1 mOhms - 20 V, 20 V 1.8 V 69 nC - 55 C + 175 C 110 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET >80 - 100V 20,650재고 상태
최소: 1
배수: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 100 V 59 A 12.2 mOhms - 20 V, 20 V 2 V 26 nC - 55 C + 175 C 94 W Enhancement OptiMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET MOSFET_(120V 300V) 1,327재고 상태
최소: 1
배수: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 171 A 4.8 mOhms - 30 V, 30 V 3 V 227 nC - 55 C + 175 C 517 W Enhancement AEC-Q101 Tube
Infineon Technologies MOSFET 30V 1 N-CH HEXFET 3.1mOhms 41nC 4,368재고 상태
최소: 1
배수: 1
: 4,000

Si SMD/SMT PQFN-8 N-Channel 1 Channel 30 V 120 A 4.6 mOhms - 20 V, 20 V 1.8 V 41 nC - 55 C + 150 C 3.6 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IR FET >60-400V 1,287재고 상태
최소: 1
배수: 1
Si Through Hole N-Channel 2 Channel 100 V 11 A 72.5 mOhms - 20 V, 20 V 5 V 12 nC - 55 C + 150 C 18 W Enhancement Tube
Infineon Technologies MOSFET MOSFET N CH 60V 95A TO-220AB 53,692재고 상태
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 95 A 4.9 mOhms - 20 V, 20 V 3.7 V 75 nC - 55 C + 175 C 125 W Enhancement StrongIRFET Tube
Infineon Technologies MOSFET IFX FET 60V 892재고 상태
최소: 1
배수: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 60 V 282 A 1.2 mOhms - 20 V, 20 V 2.1 V 155 nC - 55 C + 175 C 250 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel


Infineon Technologies MOSFET IR FET >60-400V 2,556재고 상태
최소: 1
배수: 1

Si Through Hole TO-247AC-3 N-Channel 1 Channel 100 V 180 A 4.5 mOhms - 20 V, 20 V 2 V 150 nC - 55 C + 175 C 370 W Enhancement Tube
Infineon Technologies MOSFET IR FET >60-400V 699재고 상태
최소: 1
배수: 1

Si Through Hole TO-247AC-3 N-Channel 1 Channel 75 V 195 A 1.85 mOhms - 20 V, 20 V 4 V 380 nC - 55 C + 175 C 520 W Enhancement Tube
Infineon Technologies MOSFET IFX FET >80 - 100V 4,251재고 상태
최소: 1
배수: 1
Si Through Hole N-Channel 1 Channel 100 V 209 A 1.28 mOhms - 20 V, 20 V 3.8 V 330 nC - 55 C + 175 C 556 W Enhancement Tube
Infineon Technologies MOSFET MOSFT 60V 300A 1.9mOhm 110nC LogLv7 1,289재고 상태
최소: 1
배수: 1
: 800

Si SMD/SMT TO-252-7 N-Channel 1 Channel 60 V 300 A 1.9 mOhms - 16 V, 16 V 2.5 V 160 nC - 55 C + 175 C 380 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3,631재고 상태
최소: 1
배수: 1
: 5,000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 30 V 230 A 1.1 mOhms - 20 V, 20 V 2 V 72 nC - 55 C + 150 C 96 W Enhancement OptiMOS Reel, Cut Tape, MouseReel


Infineon Technologies MOSFET IFX FET >100-150V 2,864재고 상태
최소: 1
배수: 1

Si Through Hole N-Channel 1 Channel 150 V 203 A 2.7 mOhms - 20 V, 20 V 4.6 V 160 nC - 55 C + 175 C 556 W Enhancement Tube
Infineon Technologies MOSFET IFX FET >100-150V 895재고 상태
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 186 A 4.5 mOhms - 20 V, 20 V 4.6 V 80 nC - 55 C + 175 C 341 W Enhancement Tube
Infineon Technologies MOSFET IFX FET 40V 13,081재고 상태
최소: 1
배수: 1
: 5,000

Si SMD/SMT TDSON-FL-8 N-Channel 1 Channel 40 V 121 A 2.8 mOhms - 20 V, 20 V 2.2 V 29 nC - 55 C + 175 C 75 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET MOSFT 100V 51A 25mOhm 66.7nCAC 3,059재고 상태
2,800주문 중
최소: 1
배수: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 51 A 25 mOhms - 20 V, 20 V 1.8 V 66.7 nC - 55 C + 175 C 180 W Enhancement Tube
Infineon Technologies MOSFET MOSFT 60V 270A 2.4mOhm 91nC Log Lvl 5,905재고 상태
최소: 1
배수: 1
: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 60 V 270 A 2.4 mOhms - 16 V, 16 V 2.5 V 140 nC - 55 C + 175 C 380 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies IRFP4468PBFXKMA1
Infineon Technologies MOSFET IR FET >60-400V 412재고 상태
3,200주문 중
최소: 1
배수: 1

Si Through Hole TO-247AC-3 N-Channel 1 Channel 100 V 290 A 2.6 mOhms - 20 V, 20 V 2 V 360 nC - 55 C + 175 C 520 W Enhancement Tube
Infineon Technologies MOSFET 40V 120A 2.5 mOhm HEXFET 90nC 143W 551재고 상태
1,000예상 2026-02-25
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 120 A 2.5 mOhms - 20 V, 20 V 1.8 V 135 nC - 55 C + 175 C 143 W Enhancement StrongIRFET Tube
Infineon Technologies MOSFET 40V StrongIRFET 240A, .75mOhm,305nC 816재고 상태
최소: 1
배수: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 40 V 522 A 750 mOhms - 20 V, 20 V 3 V 305 nC - 55 C + 175 C 375 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET 40V, 195A, 1.8 mOhm 150 nC Qg, TO-262 847재고 상태
1,000예상 2026-03-05
최소: 1
배수: 1

Si Through Hole TO-262-3 N-Channel 1 Channel 40 V 250 A 1.8 mOhms - 20 V, 20 V 3.9 V 225 nC - 55 C + 175 C 230 W Enhancement StrongIRFET Tube
Infineon Technologies MOSFET IFX FET >80 - 100V
6,000주문 중
최소: 1
배수: 1

Si Through Hole N-Channel 1 Channel 100 V 203 A 1.7 mOhms - 20 V, 20 V 3.8 V 168 nC - 55 C + 175 C 341 W Enhancement Tube


Infineon Technologies MOSFET IR FET >60-400V
754예상 2026-02-24
최소: 1
배수: 1

Si Through Hole TO-247AC-3 N-Channel 1 Channel 150 V 171 A 5.9 mOhms - 20 V, 20 V 3 V 151 nC - 55 C + 175 C 517 W Enhancement Tube
Infineon Technologies IRFP4310ZPBFXKMA1
Infineon Technologies MOSFET IR FET >60-400V
380예상 2026-04-23
최소: 1
배수: 1

Si Through Hole TO-247AC-3 N-Channel 1 Channel 100 V 120 A 6 mOhms - 20 V, 20 V 4 V 120 nC - 55 C + 175 C 280 W Enhancement Tube