
Infineon Technologies OptiMOS™ 5 전력 MOSFET
Infineon의 OptiMOS™ 5 전력 MOSFET는 시스템 비용을 줄이면서 향상된 시스템 효율 요구사항에 부합하도록 설계되었습니다. 이 장치는 대체 장치 대비 낮은 RDS(on)와 성능 지수(RDS(on) x Qg)가 특징입니다. 새로운 실리콘 기술을 사용하여 설계된 이 장치는 에너지 효율 및 전력 밀도 요구 사항에 부합하고 이를 능가하도록 최적화되었습니다. 이 MOSFET는 컴퓨팅 업계에서 서버, 데이터 통신, 클라이언트 애플리케이션용으로 주로 사용됩니다. 스위치 모드 전원장치(SMPS)의 동기식 정류 및 모터 제어, 태양광 마이크로 인버터, 고속 스위칭 DC/DC 변환기 애플리케이션에도 사용될 수 있습니다.25V and 30V Power MOSFETs
Infineon OptiMOS™ 5 25V and 30V Power MOSFETs offer benchmark solutions by enabling the highest power density and energy efficiency, both in standby and full operation. These MOSFETs are based on silicon technology, optimized to meet and exceed the energy efficiency and power density requirements.
These are based on the tightened next-generation voltage regulation standards in DC/DC applications. OptiMOS™ 5 products address a broad range of voltage regulation applications in the computing industry. This includes server, datacom, and client applications while focusing on Intel's VR and IMVP platforms.
Features
- Best-in-Class on-state resistance
- Benchmark switching performance (lowest Figure of Merits Ron x Qg and Ron x Qgd)
- RoHS compliant and halogen-free
- Optimized EMI behavior (integrated damping network)
- Highest efficiency
- Highest power density with S3O8 or Power Block package
- Reduction of overall system costs
- Operation at a high-switching frequency
Applications
- Desktop and Server
- Singlephase and Multiphase PoL
- CPU/GPU Voltage regulation in Notebooks
- High Power Density Voltage Regulator
- Or-ing
- E-fuse
시스템 효율

40V and 60V Power MOSFETs
Infineon OptiMOS™ 5 80V and 100V Power MOSFETs are specially designed for Synchronous Rectification in Telecom and Server Power Supplies. These devices can also be utilized in other industrial applications such as Solar, Low Voltage Drives, and Adapters.
Offered in seven different packages, the OptiMOS™ 5 80V and 100V MOSFETs provide low RDS(on). One of the most significant contributors to this industry-leading FOM is the low on-state resistance with a value as low as 2.7mΩ in the Super SO-8 package, providing the highest level of power density and efficiency.
Features
- Optimized for Synchronous Rectification
- Ideal for high switching frequency
- Output capacitance improvement of up to 44%
- RDS(on) reduction of up to 43% from the previous generation
- Highest system efficiency
- Reduced switching and conduction losses
- Less paralleling required
- Increased power density
- 5V lower voltage overshoot
Applications
- Telecom
- Server
- Solar
- Low Voltage Drives
- Light Electric Vehicles
- Adapters
RDS(on) 비교

80V and 100V Power MOSFETs
Infineon OptiMOS™ 5 150V Power MOSFETs are suitable for low voltage drives like forklifts, e-scooters, telecom,and solar applications. The 150V MOSFETs offer an up to 25 percent reduction in RDS(on) and Qrr without compromising FOMgd. This reduces design effort and optimizes system efficiency. The ultralow reverse recovery charge (lowest Qrr in SuperSO8 = 26nC) increases commutation ruggedness.
The OptiMOS 5 150V technology enables smaller best-in-class SuperSO8 (PQFN 5x6) package devices to replace TO-220 alternatives. The switch provides increased power density and lower voltage overshoot (VDS) due to reduced package inductance.
Features
- Lower RDS(on) without compromising FOMgd and FOMOSS
- Lower output charge
- Ultralow reverse recovery charge
- Increased commutation ruggedness
- Higher switching frequency possible
Applications
- Low voltages drives
- Telecom
- Solar
성능 비교

150V Power MOSFETs
Infineon OptiMOS™ 5 150V Power MOSFETs are suitable for low voltage drives like forklifts, e-scooters, telecom, and solar applications. The 150V MOSFETs offer an up to 25 percent reduction in RDS(on) and Qrr without compromising FOMgd. This reduces design effort and optimizes system efficiency. The ultralow reverse recovery charge (lowest Qrr in SuperSO8 = 26nC) increases commutation ruggedness.
The OptiMOS 5 150V technology enables smaller best-in-class SuperSO8 (PQFN 5x6) package devices to replace TO-220 alternatives. The switch provides increased power density and lower voltage overshoot (VDS) due to reduced package inductance.
Features
- Lower RDS(on) without compromising FOMgd and FOMOSS
- Lower output charge
- Ultralow reverse recovery charge
- Increased commutation ruggedness
- Higher switching frequency possible
Applications
- Low voltages drives
- Telecom
- Solar
성능 비교
