AEC-Q101 SiC Power MOSFETs

ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch-mode power supplies. The SiC Power MOSFETs can boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles. Vehicle batteries are trending towards larger capacities with shorter charging times. This demands high power and efficiency on board chargers such as 11kW and 22kW. This leads to increased adoption of SiC MOSFETs. The AEC-Q101 SiC Power MOSFETs meet the needs of electronic vehicles and utilize a trench gate structure. The future design of ROHM's SiC MOSFETs endeavors to improve quality, strengthen its lineup to increase device performance, reduce power consumption, and achieve greater miniaturization.

결과: 34
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 장착 스타일 패키지/케이스 트랜지스터 극성 채널 수 Vds - 드레인 소스 항복 전압 Id - 연속 드레인 전류 Rds On - 드레인 소스 저항 Vgs - 게이트 소스 전압 Vgs th - 게이트 소스 역치 전압 Qg - 게이트 전하 최저 작동온도 최고 작동온도 Pd - 전력 발산 채널 모드 자격
ROHM Semiconductor SiC MOSFET TO247 1.2KV 26A N-CH SIC 495재고 상태
최소: 1
배수: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 26 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC MOSFET TO247 1.2KV 26A N-CH SIC 584재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 26 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC MOSFET TO247 750V 34A N-CH SIC 758재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 34 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC MOSFET TO247 1.2KV 26A N-CH SIC 830재고 상태
최소: 1
배수: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 26 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC MOSFET TO263 750V 31A N-CH SIC 51재고 상태
최소: 1
배수: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 31 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 93 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET 650V 118A 427W SIC 17mOhm TO-247N 360재고 상태
최소: 1
배수: 1

Through Hole TO-247N-3 N-Channel 1 Channel 650 V 118 A 22.1 mOhms - 4 V, + 22 V 5.6 V 172 nC - 55 C + 175 C 427 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET TO247 750V 56A N-CH SIC 814재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 56 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 176 W Enhancement
ROHM Semiconductor SiC MOSFET TO247 750V 34A N-CH SIC 810재고 상태
최소: 1
배수: 1

Through Hole TO-247N-3 N-Channel 1 Channel 750 V 34 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC MOSFET 650V 70A 262W SIC 30mOhm TO-247N 376재고 상태
최소: 1
배수: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET TO247 1.2KV 43A N-CH SIC 115재고 상태
최소: 1
배수: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 43 A 47 mOhms - 4 V, + 21 V 4.8 V 91 nC + 175 C 176 W Enhancement
ROHM Semiconductor SiC MOSFET 1200V 95A 427W SIC 22mOhm TO-247N 199재고 상태
최소: 1
배수: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 95 A 28.6 mOhms - 4 V, + 22 V 5.6 V 178 nC - 55 C + 175 C 427 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET 1200V 31A 165W SIC 80mOhm TO-247N 393재고 상태
최소: 1
배수: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 31 A 80 mOhms - 4 V, + 22 V 2.7 V 60 nC - 55 C + 175 C 165 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET 1200V 24A 134W SIC 105mOhm TO-247N 1,629재고 상태
최소: 1
배수: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 24 A 137 mOhms - 4 V, + 22 V 5.6 V 51 nC + 175 C 134 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET 1200V 55A 262W SIC 40mOhm TO-247N 477재고 상태
최소: 1
배수: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 55 A 52 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET 1200V 17A 103W SIC 160mOhm TO-247N 506재고 상태
최소: 1
배수: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 103 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET 1200V 72A 339W SIC 30mOhm TO-247N 352재고 상태
최소: 1
배수: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 72 A 39 mOhms - 4 V, + 22 V 5.6 V 131 nC - 55 C + 175 C 339 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET 650V 30A 134W SIC 80mOhm TO-247N 376재고 상태
최소: 1
배수: 1

Through Hole TO-247N-3 N-Channel 1 Channel 650 V 30 A 104 mOhms - 4 V, + 22 V 5.6 V 48 nC + 175 C 134 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET 650V 39A 165W SIC 60mOhm TO-247N 428재고 상태
최소: 1
배수: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 39 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 165 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET TO247 750V 56A N-CH SIC 787재고 상태
최소: 1
배수: 1

Through Hole TO-247N-3 N-Channel 1 Channel 750 V 56 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 176 W Enhancement
ROHM Semiconductor SiC MOSFET TO263 750V 51A N-CH SIC 2,020재고 상태
최소: 1
배수: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 51 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 150 W Enhancement
ROHM Semiconductor SiC MOSFET TO263 750V 51A N-CH SIC 947재고 상태
최소: 1
배수: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 51 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 150 W Enhancement
ROHM Semiconductor SiC MOSFET TO247 1.2KV 43A N-CH SIC 493재고 상태
최소: 1
배수: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 43 A 47 mOhms - 4 V, + 21 V 4.8 V 91 nC + 175 C 176 W Enhancement
ROHM Semiconductor SiC MOSFET TO247 1.2KV 43A N-CH SIC 199재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 43 A 47 mOhms - 4 V, + 21 V 4.8 V 91 nC + 175 C 176 W Enhancement
ROHM Semiconductor SiC MOSFET TO247 1.2KV 43A N-CH SIC 686재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 43 A 47 mOhms - 4 V, + 21 V 4.8 V 91 nC + 175 C 176 W Enhancement
ROHM Semiconductor SiC MOSFET TO263 750V 31A N-CH SIC 1,996재고 상태
최소: 1
배수: 1
최대: 100
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 31 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 93 W Enhancement