Gen-3 Fast (G3F) SiC MOSFETs

GeneSiC Semiconductor Gen-3 Fast (G3F) SiC MOSFETs are developed using a proprietary trench-assisted planar technology for high-speed performance. The technology enables an extremely low RDS(ON) increase vs. temperature, which results in low power losses across the full operating range. Available in 650V and 1200V variants, these MOSFETs are optimized for faster switching speeds, higher efficiency, and increased power density. GeneSiC G3F SiC MOSFETs offer high-speed, cool-running performance, with up to a +25°C lower case temperature. The thermally enhanced TOLL package for the 650V variant provides space and thermal management advantages. The 1200V models offer the power needed for next-generation EVs and industrial applications. Typical applications include AI data centers, EV roadside superchargers, onboard chargers (OBC), energy storage systems (ESS), and solar power solutions.

결과: 29
선택 이미지 부품 번호
 제조업체
설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다.
수량 RoHS ECAD 모델 장착 스타일
패키지/케이스
트랜지스터 극성
채널 수
Vds - 드레인 소스 항복 전압
Id - 연속 드레인 전류
Rds On - 드레인 소스 저항
채널 모드
GeneSiC Semiconductor SiC MOSFET 1200V 65mohm TO-263-7 G3F SiC MOSFET
데이터시트
1,570재고 상태
최소: 1
배수: 1
릴: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 65 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 65mohm TO-247-4 G3F SiC MOSFET 513재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 65 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 75mohm TO-263-7 G3F SiC MOSFET 653재고 상태
최소: 1
배수: 1
릴: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 39 A 75 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 75mohm TO-247-4 G3F SiC MOSFET 1,699재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 35 A 75 mOhms Enhancement