Gen-3 Fast (G3F) SiC MOSFETs

GeneSiC Semiconductor Gen-3 Fast (G3F) SiC MOSFETs are developed using a proprietary trench-assisted planar technology for high-speed performance. The technology enables an extremely low RDS(ON) increase vs. temperature, which results in low power losses across the full operating range. Available in 650V and 1200V variants, these MOSFETs are optimized for faster switching speeds, higher efficiency, and increased power density. GeneSiC G3F SiC MOSFETs offer high-speed, cool-running performance, with up to a +25°C lower case temperature. The thermally enhanced TOLL package for the 650V variant provides space and thermal management advantages. The 1200V models offer the power needed for next-generation EVs and industrial applications. Typical applications include AI data centers, EV roadside superchargers, onboard chargers (OBC), energy storage systems (ESS), and solar power solutions.

결과: 29
선택 이미지 부품 번호
 제조업체
설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다.
수량 RoHS ECAD 모델 장착 스타일
패키지/케이스
트랜지스터 극성
채널 수
Vds - 드레인 소스 항복 전압
Id - 연속 드레인 전류
Rds On - 드레인 소스 저항
채널 모드
GeneSiC Semiconductor SiC MOSFET 1200V 18mohm TO-263-7 G3F SiC MOSFET 790재고 상태
최소: 1
배수: 1
릴: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 18 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 20mohm TO-LL G3F SiC MOSFET 1,933재고 상태
최소: 1
배수: 1
릴: 1,200

SMD/SMT TO-LL N-Channel 650 V 20 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 25mohm TO-263-7 G3F SiC MOSFET 1,191재고 상태
최소: 1
배수: 1
릴: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 25 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 34mohm TO-263-7 G3F SiC MOSFET 1,552재고 상태
최소: 1
배수: 1
릴: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 34 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 40mohm TO-247-4 G3F SiC MOSFET 1,642재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 61 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 135mohm TO-263-7 G3F SiC MOSFET 1,565재고 상태
최소: 1
배수: 1
릴: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 135 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 18mohm TO-247-4 G3F SiC MOSFET
데이터시트
435재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 18 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 20mohm TO-263-7 G3F SiC MOSFET 424재고 상태
최소: 1
배수: 1
릴: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 123 A 20 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 20mohm TO-247-4 G3F SiC MOSFET 565재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 109 A 20 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 20mohm TO-263-7 G3F SiC MOSFET 648재고 상태
최소: 1
배수: 1
릴: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 100 A 20 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 20mohm TO-247-4 G3F SiC MOSFET 1,112재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 90 A 20 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 25mohm TO-247-4 G3F SiC MOSFET 247재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 25 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 27mohm TO-263-7 G3F SiC MOSFET 778재고 상태
최소: 1
배수: 1
릴: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 78 A 27 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 27mohm TO-247-4 G3F SiC MOSFET 1,129재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 70 A 27 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 27mohm TO-LL G3F SiC MOSFET 1,200재고 상태
최소: 1
배수: 1
릴: 1,200

SMD/SMT TO-LL N-Channel 650 V 27 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 34mohm TO-247-4 G3F SiC MOSFET 461재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 34 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 40mohm TO-263-7 G3F SiC MOSFET 786재고 상태
최소: 1
배수: 1
릴: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 68 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 40mohm TO-247-3 G3F SiC MOSFET 1,163재고 상태
최소: 1
배수: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 52 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 40mohm TO-263-7 G3F SiC MOSFET 775재고 상태
최소: 1
배수: 1
릴: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 57 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 40mohm TO-247-4 G3F SiC MOSFET 1,058재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 52 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 40mohm TO-LL G3F SiC MOSFET 1,055재고 상태
최소: 1
배수: 1
릴: 1,200

SMD/SMT TO-LL N-Channel 650 V 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 55mohm TO-247-3 G3F SiC MOSFET 1,129재고 상태
최소: 1
배수: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 42 A 55 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 55mohm TO-263-7 G3F SiC MOSFET 755재고 상태
최소: 1
배수: 1
릴: 800

GeneSiC Semiconductor SiC MOSFET 650V 55mohm TO-247-4 G3F SiC MOSFET 1,056재고 상태
최소: 1
배수: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 42 A 55 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 55mohm TO-LL G3F SiC MOSFET 1,200재고 상태
최소: 1
배수: 1
릴: 1,200