SiC MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
IMBG120R045M1HXTMA1
Infineon Technologies
1:
₩20,626.4
641 재고 상태
Mouser 부품 번호
726-IMBG120R045M1HXT
Infineon Technologies
SiC MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
641 재고 상태
1
₩20,626.4
10
₩14,865.6
100
₩12,524.8
500
₩12,008
1,000
₩10,837.6
구매
최소: 1
배수: 1
릴 :
1,000
세부 정보
SMD/SMT
TO-263-7
N-Channel
1 Channel
1.2 kV
47 A
45 mOhms
- 7 V, + 20 V
5.1 V
46 nC
- 55 C
+ 175 C
227 W
Enhancement
CoolSiC
SiC MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
IMBG120R060M1HXTMA1
Infineon Technologies
1:
₩13,558.4
329 재고 상태
Mouser 부품 번호
726-IMBG120R060M1HXT
Infineon Technologies
SiC MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
329 재고 상태
1
₩13,558.4
10
₩10,351.2
100
₩8,101.6
1,000
₩7,660.8
구매
최소: 1
배수: 1
릴 :
1,000
세부 정보
SMD/SMT
TO-263-7
N-Channel
1 Channel
1.2 kV
36 A
83 mOhms
- 7 V, + 20 V
5.1 V
34 nC
- 55 C
+ 175 C
181 W
Enhancement
CoolSiC
SiC MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
IMBF170R650M1XTMA1
Infineon Technologies
1:
₩9,576
1,899 재고 상태
Mouser 부품 번호
726-IMBF170R650M1XTM
Infineon Technologies
SiC MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
1,899 재고 상태
1
₩9,576
10
₩6,034.4
100
₩4,575.2
500
₩4,088.8
1,000
₩3,860.8
구매
최소: 1
배수: 1
릴 :
1,000
세부 정보
SMD/SMT
TO-263-7
N-Channel
1 Channel
1.7 kV
7.4 A
650 mOhms
- 10 V, + 20 V
4.5 V
8 nC
- 55 C
+ 175 C
88 W
Enhancement
CoolSiC
SiC MOSFET SILICON CARBIDE MOSFET
IMZA65R107M1HXKSA1
Infineon Technologies
1:
₩10,138.4
437 재고 상태
수명 종료
Mouser 부품 번호
726-IMZA65R107M1HXKS
수명 종료
Infineon Technologies
SiC MOSFET SILICON CARBIDE MOSFET
437 재고 상태
1
₩10,138.4
10
₩6,642.4
100
₩5,563.2
480
₩5,548
구매
최소: 1
배수: 1
세부 정보
Through Hole
TO-247-4
N-Channel
1 Channel
650 V
20 A
142 mOhms
- 5 V, + 23 V
5.7 V
15 nC
- 55 C
+ 150 C
75 W
Enhancement
CoolSiC
SiC MOSFET SILICON CARBIDE MOSFET
IMW65R072M1HXKSA1
Infineon Technologies
1:
₩12,509.6
434 재고 상태
NRND
Mouser 부품 번호
726-IMW65R072M1HXKSA
NRND
Infineon Technologies
SiC MOSFET SILICON CARBIDE MOSFET
434 재고 상태
1
₩12,509.6
10
₩7,250.4
100
₩6,095.2
480
₩5,730.4
구매
최소: 1
배수: 1
세부 정보
Through Hole
TO-247-3
N-Channel
1 Channel
650 V
26 A
94 mOhms
- 5 V, + 23 V
5.7 V
22 nC
- 55 C
+ 150 C
96 W
Enhancement
CoolSiC
SiC MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
IMBF170R450M1XTMA1
Infineon Technologies
1:
₩12,433.6
3,428 재고 상태
3,000 예상 2026-10-22
Mouser 부품 번호
726-IMBF170R450M1XTM
Infineon Technologies
SiC MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
3,428 재고 상태
3,000 예상 2026-10-22
1
₩12,433.6
10
₩8,314.4
100
₩6,688
500
₩5,943.2
1,000
₩5,274.4
구매
최소: 1
배수: 1
릴 :
1,000
세부 정보
SMD/SMT
TO-263-7
N-Channel
1 Channel
1.7 kV
9.8 A
450 mOhms
- 10 V, + 20 V
4.5 V
11 nC
- 55 C
+ 175 C
107 W
Enhancement
CoolSiC
SiC MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
IMBG120R030M1HXTMA1
Infineon Technologies
1:
₩28,165.6
686 재고 상태
1,000 예상 2026-07-23
Mouser 부품 번호
726-IMBG120R030M1HXT
Infineon Technologies
SiC MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
686 재고 상태
1,000 예상 2026-07-23
1
₩28,165.6
10
₩21,447.2
100
₩17,875.2
500
₩15,929.6
1,000
₩14,880.8
구매
최소: 1
배수: 1
릴 :
1,000
세부 정보
SMD/SMT
TO-263-7
N-Channel
1 Channel
1.2 kV
56 A
41 mOhms
- 7 V, + 20 V
5.1 V
63 nC
- 55 C
+ 175 C
300 W
Enhancement
CoolSiC
SiC MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
IMBG120R090M1HXTMA1
Infineon Technologies
1:
₩13,923.2
914 재고 상태
Mouser 부품 번호
726-IMBG120R090M1HXT
Infineon Technologies
SiC MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
914 재고 상태
1
₩13,923.2
10
₩9,500
100
₩7,843.2
500
₩6,992
1,000
₩6,536
구매
최소: 1
배수: 1
릴 :
1,000
세부 정보
SMD/SMT
TO-263-7
N-Channel
1 Channel
1.2 kV
26 A
125 mOhms
- 7 V, + 20 V
5.1 V
23 nC
- 55 C
+ 175 C
136 W
Enhancement
CoolSiC
SiC MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
IMBG120R140M1HXTMA1
Infineon Technologies
1:
₩12,296.8
1,888 재고 상태
Mouser 부품 번호
726-IMBG120R140M1HXT
Infineon Technologies
SiC MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
1,888 재고 상태
1
₩12,296.8
10
₩8,648.8
100
₩6,992
500
₩6,216.8
1,000
₩5,517.6
구매
최소: 1
배수: 1
릴 :
1,000
세부 정보
SMD/SMT
TO-263-7
N-Channel
1 Channel
1.2 kV
18 A
189 mOhms
- 7 V, + 20 V
5.1 V
13.4 nC
- 55 C
+ 175 C
107 W
Enhancement
CoolSiC
SiC MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
IMBG120R350M1HXTMA1
Infineon Technologies
1:
₩10,184
1,238 재고 상태
Mouser 부품 번호
726-IMBG120R350M1HXT
Infineon Technologies
SiC MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
1,238 재고 상태
1
₩10,184
10
₩6,672.8
100
₩4,909.6
500
₩4,362.4
1,000
₩3,876
구매
최소: 1
배수: 1
릴 :
1,000
세부 정보
SMD/SMT
TO-263-7
N-Channel
1 Channel
1.2 kV
4.7 A
468 mOhms
- 7 V, + 20 V
5.1 V
5.9 nC
- 55 C
+ 175 C
65 W
Enhancement
CoolSiC
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
IMW120R220M1HXKSA1
Infineon Technologies
1:
₩12,099.2
1,176 재고 상태
1,920 예상 2026-08-08
Mouser 부품 번호
726-IMW120R220M1HXKS
Infineon Technologies
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
1,176 재고 상태
1,920 예상 2026-08-08
1
₩12,099.2
10
₩8,101.6
100
₩6,505.6
480
₩5,776
구매
최소: 1
배수: 1
세부 정보
Through Hole
TO-247-3
N-Channel
1 Channel
1.2 kV
13 A
289 mOhms
- 7 V, + 23 V
5.7 V
8.5 nC
- 55 C
+ 150 C
75 W
Enhancement
CoolSiC
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
IMW120R350M1HXKSA1
Infineon Technologies
1:
₩9,667.2
657 재고 상태
240 예상 2026-07-16
Mouser 부품 번호
726-IMW120R350M1HXKS
Infineon Technologies
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
657 재고 상태
240 예상 2026-07-16
1
₩9,667.2
10
₩5,487.2
100
₩4,575.2
480
₩4,058.4
구매
최소: 1
배수: 1
세부 정보
Through Hole
TO-247-3
N-Channel
1 Channel
1.2 kV
4.7 A
455 mOhms
- 7 V, + 23 V
5.7 V
5.3 nC
- 55 C
+ 150 C
60 W
Enhancement
CoolSiC
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
IMZ120R030M1HXKSA1
Infineon Technologies
1:
₩30,248
228 재고 상태
720 예상 2026-07-30
Mouser 부품 번호
726-IMZ120R030M1HXKS
Infineon Technologies
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
228 재고 상태
720 예상 2026-07-30
1
₩30,248
10
₩23,043.2
100
₩19,197.6
480
₩17,115.2
1,200
견적
1,200
견적
구매
최소: 1
배수: 1
세부 정보
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
56 A
40 mOhms
- 7 V, + 23 V
5.7 V
63 nC
- 55 C
+ 150 C
227 W
Enhancement
CoolSiC
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
IMZ120R140M1HXKSA1
Infineon Technologies
1:
₩13,771.2
369 재고 상태
Mouser 부품 번호
726-IMZ120R140M1HXKS
Infineon Technologies
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
369 재고 상태
1
₩13,771.2
10
₩8,770.4
100
₩7,645.6
480
₩6,080
구매
최소: 1
배수: 1
세부 정보
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
19 A
182 mOhms
- 7 V, + 23 V
5.7 V
13 nC
- 55 C
+ 150 C
94 W
Enhancement
CoolSiC
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
IMZ120R220M1HXKSA1
Infineon Technologies
1:
₩12,357.6
213 재고 상태
1,920 주문 중
Mouser 부품 번호
726-IMZ120R220M1HXKS
Infineon Technologies
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
213 재고 상태
1,920 주문 중
날짜 보기
주문 중:
960 예상 2026-09-17
960 예상 2027-04-01
1
₩12,357.6
10
₩8,010.4
100
₩6,156
480
₩5,380.8
1,200
₩5,213.6
구매
최소: 1
배수: 1
세부 정보
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
13 A
220 mOhms
- 7 V, + 23 V
5.7 V
8.5 nC
- 55 C
+ 150 C
75 W
Enhancement
CoolSiC
SiC MOSFET SILICON CARBIDE MOSFET
IMW65R027M1HXKSA1
Infineon Technologies
1:
₩21,994.4
1,240 재고 상태
NRND
Mouser 부품 번호
726-IMW65R027M1HXKSA
NRND
Infineon Technologies
SiC MOSFET SILICON CARBIDE MOSFET
1,240 재고 상태
1
₩21,994.4
10
₩13,360.8
100
₩12,023.2
구매
최소: 1
배수: 1
세부 정보
Through Hole
TO-247-3
N-Channel
1 Channel
650 V
47 A
34 mOhms
- 5 V, + 23 V
5.7 V
62 nC
- 55 C
+ 150 C
189 W
Enhancement
CoolSiC
SiC MOSFET SILICON CARBIDE MOSFET
IMW65R048M1HXKSA1
Infineon Technologies
1:
₩15,230.4
445 재고 상태
NRND
Mouser 부품 번호
726-IMW65R048M1HXKSA
NRND
Infineon Technologies
SiC MOSFET SILICON CARBIDE MOSFET
445 재고 상태
1
₩15,230.4
10
₩8,968
100
₩7,584.8
480
₩7,432.8
구매
최소: 1
배수: 1
세부 정보
Through Hole
TO-247-3
N-Channel
1 Channel
650 V
39 A
64 mOhms
- 5 V, + 23 V
5.7 V
33 nC
- 55 C
+ 150 C
125 W
Enhancement
CoolSiC
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
IMW120R030M1HXKSA1
Infineon Technologies
1:
₩30,612.8
480 예상 2026-07-02
Mouser 부품 번호
726-IMW120R030M1HXKS
Infineon Technologies
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
480 예상 2026-07-02
1
₩30,612.8
10
₩23,316.8
100
₩19,425.6
480
₩17,312.8
1,200
견적
1,200
견적
구매
최소: 1
배수: 1
세부 정보
Through Hole
TO-247-3
N-Channel
1 Channel
1.2 kV
56 A
40 mOhms
- 7 V, + 23 V
5.7 V
63 nC
- 55 C
+ 150 C
227 W
Enhancement
CoolSiC
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
IMW120R060M1HXKSA1
Infineon Technologies
1:
₩17,662.4
16 재고 상태
720 주문 중
Mouser 부품 번호
726-IMW120R060M1HXKS
Infineon Technologies
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
16 재고 상태
720 주문 중
날짜 보기
주문 중:
480 예상 2026-08-13
240 예상 2026-08-27
1
₩17,662.4
10
₩12,768
100
₩10,640
480
₩9,484.8
구매
최소: 1
배수: 1
세부 정보
Through Hole
TO-247-3
N-Channel
1 Channel
1.2 kV
36 A
78 mOhms
- 7 V, + 23 V
5.7 V
31 nC
- 55 C
+ 150 C
150 W
Enhancement
CoolSiC
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
IMW120R140M1HXKSA1
Infineon Technologies
1:
₩11,764.8
375 재고 상태
Mouser 부품 번호
726-IMW120R140M1HXKS
Infineon Technologies
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
375 재고 상태
1
₩11,764.8
10
₩7,098.4
100
₩5,958.4
480
₩5,578.4
구매
최소: 1
배수: 1
세부 정보
Through Hole
TO-247-3
N-Channel
1 Channel
1.2 kV
19 A
182 mOhms
- 7 V, + 23 V
3.5 V
13 nC
- 55 C
+ 175 C
94 W
Enhancement
CoolSiC
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
IMZ120R060M1HXKSA1
Infineon Technologies
1:
₩17,221.6
65 재고 상태
960 주문 중
Mouser 부품 번호
726-IMZ120R060M1HXKS
Infineon Technologies
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
65 재고 상태
960 주문 중
날짜 보기
주문 중:
480 예상 2026-09-10
480 예상 2026-09-17
1
₩17,221.6
10
₩11,552
100
₩9,150.4
480
₩8,679.2
구매
최소: 1
배수: 1
세부 정보
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
36 A
78 mOhms
- 7 V, + 23 V
5.7 V
31 nC
- 55 C
+ 150 C
150 W
Enhancement
CoolSiC
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
IMZ120R090M1HXKSA1
Infineon Technologies
1:
₩15,200
175 재고 상태
Mouser 부품 번호
726-IMZ120R090M1HXKS
Infineon Technologies
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
175 재고 상태
1
₩15,200
10
₩9,910.4
100
₩7,858.4
480
₩7,037.6
구매
최소: 1
배수: 1
세부 정보
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
26 A
117 mOhms
- 7 V, + 23 V
5.7 V
21 nC
- 55 C
+ 150 C
115 W
Enhancement
CoolSiC
SiC MOSFET CoolSiC MOSFET discrete 1200 V in TO247-4 package
IMZ120R350M1HXKSA1
Infineon Technologies
1:
₩10,655.2
352 재고 상태
Mouser 부품 번호
726-IMZ120R350M1HXKS
Infineon Technologies
SiC MOSFET CoolSiC MOSFET discrete 1200 V in TO247-4 package
352 재고 상태
1
₩10,655.2
10
₩6,520.8
100
₩5,183.2
480
₩4,712
1,200
₩4,575.2
구매
최소: 1
배수: 1
세부 정보
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
4.7 A
350 mOhms
- 7 V, + 23 V
5.7 V
5.3 nC
- 55 C
+ 150 C
60 W
Enhancement
CoolSiC
SiC MOSFET SILICON CARBIDE MOSFET
IMW65R107M1HXKSA1
Infineon Technologies
1:
₩10,792
342 재고 상태
NRND
Mouser 부품 번호
726-IMW65R107M1HXKSA
NRND
Infineon Technologies
SiC MOSFET SILICON CARBIDE MOSFET
342 재고 상태
1
₩10,792
10
₩6,171.2
100
₩5,168
480
₩4,666.4
구매
최소: 1
배수: 1
세부 정보
Through Hole
TO-247-3
N-Channel
1 Channel
650 V
20 A
142 mOhms
- 5 V, + 23 V
5.7 V
15 nC
- 55 C
+ 150 C
75 W
Enhancement
CoolSiC
SiC MOSFET SILICON CARBIDE MOSFET
IMZA65R027M1HXKSA1
Infineon Technologies
1:
₩26,296
18 재고 상태
1,200 주문 중
NRND
Mouser 부품 번호
726-IMZA65R027M1HXKS
NRND
Infineon Technologies
SiC MOSFET SILICON CARBIDE MOSFET
18 재고 상태
1,200 주문 중
1
₩26,296
10
₩16,005.6
100
₩12,494.4
480
₩12,479.2
1,200
₩12,388
구매
최소: 1
배수: 1
세부 정보
Through Hole
TO-247-4
N-Channel
1 Channel
650 V
59 A
34 mOhms
- 5 V, + 23 V
5.7 V
63 nC
- 55 C
+ 150 C
189 W
Enhancement
CoolSiC