|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
- IMY120R018CM2HXKSA1
- Infineon Technologies
-
1:
₩28,256.8
-
198재고 상태
-
신제품
|
Mouser 부품 번호
726-IMY120R018CM2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
|
|
198재고 상태
|
|
|
₩28,256.8
|
|
|
₩22,997.6
|
|
|
₩19,167.2
|
|
|
₩16,780.8
|
|
|
견적
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
23 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
73 nC
|
- 40 C
|
+ 175 C
|
356 W
|
Enhancement
|
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
- IMY120R036AM2HXKSA1
- Infineon Technologies
-
1:
₩19,182.4
-
235재고 상태
-
신제품
|
Mouser 부품 번호
726-IMY120R036AM2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
|
|
235재고 상태
|
|
|
₩19,182.4
|
|
|
₩15,002.4
|
|
|
₩12,509.6
|
|
|
₩10,944
|
|
|
₩10,412
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
44 A
|
45 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
37 nC
|
- 40 C
|
+ 175 C
|
171 W
|
Enhancement
|
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
- IMY120R036CM2HXKSA1
- Infineon Technologies
-
1:
₩18,711.2
-
225재고 상태
-
신제품
|
Mouser 부품 번호
726-IMY120R036CM2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
|
|
225재고 상태
|
|
|
₩18,711.2
|
|
|
₩14,637.6
|
|
|
₩12,205.6
|
|
|
₩10,685.6
|
|
|
₩10,153.6
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
44 A
|
45 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
37 nC
|
- 40 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R012M2HXKSA1
- Infineon Technologies
-
1:
₩40,477.6
-
134재고 상태
-
신제품
|
Mouser 부품 번호
726-IMZA120R012M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
134재고 상태
|
|
최소: 1
배수: 1
최대: 10
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
|
16 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
480 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R017M2HXKSA1
- Infineon Technologies
-
1:
₩30,552
-
147재고 상태
-
신제품
|
Mouser 부품 번호
726-IMZA120R017M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
147재고 상태
|
|
최소: 1
배수: 1
최대: 30
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
97 A
|
23 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
382 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R026M2HXKSA1
- Infineon Technologies
-
1:
₩22,708.8
-
185재고 상태
-
신제품
|
Mouser 부품 번호
726-IMZA120R026M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
185재고 상태
|
|
|
₩22,708.8
|
|
|
₩13,832
|
|
|
₩12,372.8
|
|
최소: 1
배수: 1
최대: 120
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
69 A
|
34 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
289 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
- IMZC120R007M2HXKSA1
- Infineon Technologies
-
1:
₩62,593.6
-
302재고 상태
-
480예상 2026-06-18
-
신제품
|
Mouser 부품 번호
726-IMZC120R007M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
|
|
302재고 상태
480예상 2026-06-18
|
|
|
₩62,593.6
|
|
|
₩53,397.6
|
|
|
₩46,709.6
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
PG-TO247-4-U07
|
N-Channel
|
1 Channel
|
1.2 kV
|
201 A
|
20 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
176 nC
|
- 55 C
|
+ 175 C
|
711 W
|
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R022M2HXKSA1
- Infineon Technologies
-
1:
₩26,204.8
-
111재고 상태
-
240예상 2026-06-11
-
신제품
|
Mouser 부품 번호
726-IMZA120R022M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
111재고 상태
240예상 2026-06-11
|
|
최소: 1
배수: 1
최대: 20
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
29 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
329 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R034M2HXKSA1
- Infineon Technologies
-
1:
₩19,060.8
-
138재고 상태
-
신제품
|
Mouser 부품 번호
726-IMZA120R034M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
138재고 상태
|
|
최소: 1
배수: 1
최대: 20
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
45 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
45 nC
|
- 55 C
|
+ 175 C
|
244 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R040M2HXKSA1
- Infineon Technologies
-
1:
₩18,148.8
-
137재고 상태
-
신제품
|
Mouser 부품 번호
726-IMZA120R040M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
137재고 상태
|
|
|
₩18,148.8
|
|
|
₩10,837.6
|
|
|
₩9,241.6
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
48 A
|
51 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
39 nC
|
- 55 C
|
+ 175 C
|
218 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R012M2HHXUMA1
- Infineon Technologies
-
1:
₩64,767.2
-
621재고 상태
-
신제품
|
Mouser 부품 번호
726-IMSQ120R012M2HHX
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
621재고 상태
|
|
|
₩64,767.2
|
|
|
₩51,102.4
|
|
|
₩47,712.8
|
|
|
₩47,712.8
|
|
최소: 1
배수: 1
:
750
|
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
- IMZC120R022M2HXKSA1
- Infineon Technologies
-
1:
₩26,204.8
-
1,705재고 상태
-
신제품
|
Mouser 부품 번호
726-IMZC120R022M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
|
|
1,705재고 상태
|
|
최소: 1
배수: 1
최대: 50
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
22 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
329 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R026M2HXTMA1
- Infineon Technologies
-
1:
₩21,462.4
-
1,855재고 상태
-
신제품
|
Mouser 부품 번호
726-IMCQ120R026M2HXT
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
1,855재고 상태
|
|
|
₩21,462.4
|
|
|
₩15,230.4
|
|
|
₩12,524.8
|
|
|
₩12,281.6
|
|
|
₩11,704
|
|
최소: 1
배수: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
82 A
|
67 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
63.4 nC
|
- 55 C
|
+ 175 C
|
405 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R034M2HXTMA1
- Infineon Technologies
-
1:
₩17,328
-
574재고 상태
-
신제품
|
Mouser 부품 번호
726-IMCQ120R034M2HXT
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
574재고 상태
|
|
|
₩17,328
|
|
|
₩12,175.2
|
|
|
₩9,834.4
|
|
|
₩9,180.8
|
|
|
₩9,180.8
|
|
최소: 1
배수: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
64 A
|
89 mOhms
|
- 10 V, + 25 C
|
5.1 V
|
48.7 nC
|
- 55 C
|
+ 175 C
|
326 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R040M2HXTMA1
- Infineon Technologies
-
1:
₩17,130.4
-
270재고 상태
-
신제품
|
Mouser 부품 번호
726-IMCQ120R040M2HXT
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
270재고 상태
|
|
|
₩17,130.4
|
|
|
₩11,840.8
|
|
|
₩9,180.8
|
|
|
₩8,572.8
|
|
|
₩8,572.8
|
|
최소: 1
배수: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
104 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
42.4 nC
|
- 55 C
|
+ 175 C
|
288 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R053M2HXTMA1
- Infineon Technologies
-
1:
₩14,303.2
-
377재고 상태
-
신제품
|
Mouser 부품 번호
726-IMCQ120R053M2HXT
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
377재고 상태
|
|
|
₩14,303.2
|
|
|
₩9,454.4
|
|
|
₩7,296
|
|
|
₩6,809.6
|
|
|
₩6,809.6
|
|
최소: 1
배수: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
43 A
|
138 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
32.8 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R078M2HXTMA1
- Infineon Technologies
-
1:
₩12,616
-
919재고 상태
-
신제품
|
Mouser 부품 번호
726-IMCQ120R078M2HXT
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
919재고 상태
|
|
|
₩12,616
|
|
|
₩8,572.8
|
|
|
₩6,277.6
|
|
|
₩5,730.4
|
|
|
₩5,730.4
|
|
최소: 1
배수: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
31 A
|
205 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
23.2 nC
|
- 55 C
|
+ 175 C
|
176 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R026M2HHXUMA1
- Infineon Technologies
-
1:
₩35,720
-
712재고 상태
-
신제품
|
Mouser 부품 번호
726-IMSQ120R026M2HHX
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
712재고 상태
|
|
|
₩35,720
|
|
|
₩26,174.4
|
|
|
₩24,183.2
|
|
|
₩22,587.2
|
|
|
₩22,587.2
|
|
최소: 1
배수: 1
:
750
|
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R040M2HHXUMA1
- Infineon Technologies
-
1:
₩28,211.2
-
670재고 상태
-
신제품
|
Mouser 부품 번호
726-IMSQ120R040M2HHX
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
670재고 상태
|
|
|
₩28,211.2
|
|
|
₩20,292
|
|
|
₩17,890.4
|
|
|
₩16,765.6
|
|
|
₩16,765.6
|
|
최소: 1
배수: 1
:
750
|
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R053M2HHXUMA1
- Infineon Technologies
-
1:
₩24,092
-
331재고 상태
-
신제품
|
Mouser 부품 번호
726-IMSQ120R053M2HHX
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
331재고 상태
|
|
|
₩24,092
|
|
|
₩17,130.4
|
|
|
₩14,470.4
|
|
|
₩13,512.8
|
|
|
₩13,512.8
|
|
최소: 1
배수: 1
:
750
|
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
- IMZC120R012M2HXKSA1
- Infineon Technologies
-
1:
₩40,477.6
-
296재고 상태
-
480예상 2026-06-18
-
신제품
|
Mouser 부품 번호
726-IMZC120R012M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
|
|
296재고 상태
480예상 2026-06-18
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
12 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
- IMZC120R017M2HXKSA1
- Infineon Technologies
-
1:
₩30,552
-
654재고 상태
-
신제품
|
Mouser 부품 번호
726-IMZC120R017M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
|
|
654재고 상태
|
|
최소: 1
배수: 1
최대: 20
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
97 A
|
17 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
382 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
- IMZC120R026M2HXKSA1
- Infineon Technologies
-
1:
₩22,708.8
-
553재고 상태
-
신제품
|
Mouser 부품 번호
726-IMZC120R026M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
|
|
553재고 상태
|
|
최소: 1
배수: 1
최대: 20
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
69 A
|
25 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
289 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
- IMZC120R034M2HXKSA1
- Infineon Technologies
-
1:
₩18,756.8
-
827재고 상태
-
240예상 2026-06-11
-
신제품
|
Mouser 부품 번호
726-IMZC120R034M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
|
|
827재고 상태
240예상 2026-06-11
|
|
최소: 1
배수: 1
최대: 70
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
|
- 10 V, + 25 V
|
5.1 V
|
45 nC
|
- 55 C
|
+ 175 C
|
244 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
- IMZC120R053M2HXKSA1
- Infineon Technologies
-
1:
₩13,999.2
-
804재고 상태
-
신제품
|
Mouser 부품 번호
726-IMZC120R053M2HXK
신제품
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
|
|
804재고 상태
|
|
|
₩13,999.2
|
|
|
₩8,253.6
|
|
|
₩7,463.2
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
38 A
|
53 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
182 W
|
Enhancement
|
CoolSiC
|
|
대한민국