Vishay / Siliconix EF High Voltage Power MOSFETs

Vishay / Siliconix EF High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Q_rr) than standard MOSFETs. The EF power MOSFETs come with low Q_rr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.

The EF power MOSFETs also incorporate 650V_DS high voltage variants that offer low Figure-Of-Merit (FOM), low input capacitance, and low gate charge. These variants are available in TO-220FP, TO-220AB, TO-247AC, TO-263, TO-247, and PowerPak 8 x 8 packages. These MOSFETs are specifically designed for welding, induction heating, motor drives, and server and telecom applications.

Features

Fast Body Diode MOSFET, using E Series Technology
Reduced T_rr / Q_rr / I_rrm
Low figure-of-merit (FOM) R_on x Q_g
Ultra-low gate charge (Q_g)
Low reverse recovery charge (Q_rr) increases reliability in zero voltage switching topologies
Ultra-low on-resistance and gate charge

Reduced conduction and switching losses
Offered in TO-220FP, TO-220AB, TO-247AC, TO-263, TO-247, and PowerPak 8 x 8 packages
Withstand high energy pulses in the avalanche and commutation mode with guaranteed limits through 100% UIS testing
RoHS-compliant and halogen-free

Applications

Telecommunications - server and telecom power supplies
Lighting
- High-intensity discharge
- LEDs
Consumer and computing - ATX power supplies
Industrial
- Welding
- Motor drivers
- Battery chargers

Renewable energy
- Solar PV inverters
Switch-mode power supplies
Applications using the following topologies
- LLC
- Phase shifted bridge (ZVS)
- 3-level inverter
- AC/DC bridge