Alliance Memory Low Power CMOS SRAM

Alliance Memory Low Power Asynchronous Static Random Access Memory (SRAM) devices are fabricated using high-performance, high-reliability CMOS technology. Alliance Memory CMOS SRAM devices are designed for low-power applications and are particularly well-suited for battery backup nonvolatile memory applications. AS6C8008 is a 8,388,608-bit device organized as 1,048,576 words by 8-bits. AS6C1616 is a 16,777,216-bit device organized as 1,048,576 words by 16-bits. AS6C6264A is a 65,536-bit device organized as 8,192 words by 8 bits. AS6C62256 is a 262,144-bit device organized as 32,768 words by 8-bits. Available in different packages/cases.

Features

  • 64kbit to 64Mbit memory size range
  • Fabricated using high-performance, high-reliability CMOS technology
  • 3.6V or 5.5V supply voltage
  • SMT or through-hole types
  • Variety of packages/cases

Applications

  • Low power
  • Battery backup non-volatile memory
View Results ( 33 ) Page
부품 번호 데이터시트 조직 메모리 크기
AS6C62256-55STIN AS6C62256-55STIN 데이터시트 32 k x 8 256 kbit
AS6C62256-55STCN AS6C62256-55STCN 데이터시트 32 k x 8 256 kbit
AS6C6264-55STCN AS6C6264-55STCN 데이터시트 8 k x 8 64 kbit
AS6C1616C-45TINTR AS6C1616C-45TINTR 데이터시트 1 M x 16 16 Mbit
AS6C6416-55TIN AS6C6416-55TIN 데이터시트 4 M x 16 64 Mbit
AS6C4008-55PCN AS6C4008-55PCN 데이터시트 512 k x 8 4 Mbit
AS6C4008-55PIN AS6C4008-55PIN 데이터시트 512 k x 8 4 Mbit
AS6C62256-55PCN AS6C62256-55PCN 데이터시트 32 k x 8 256 kbit
AS6C6264-55PCN AS6C6264-55PCN 데이터시트 8 k x 8 64 kbit
AS6C6264-55PIN AS6C6264-55PIN 데이터시트 8 k x 8 64 kbit
게시일: 2012-11-30 | 갱신일: 2024-03-14