Microchip Technology 1200V SiC MOSFET

Microchip 1200V SiC MOSFET은 외부 프리휠링 다이오드가 필요하지 않으며 빠르고 안정적인 바디 다이오드에서 뛰어난 애벌란치 견고성을 제공합니다.

The TO-247-4 Notch package enables efficient, high-power designs with improved thermal performance and reduced parasitic effects. Its four-lead layout includes a Kelvin source to reduce gate ringing and switching losses, while the Notch design enhances creepage distance for improved high-voltage reliability.

The QDPAK package is a compact, surface-mount, top-side cooled solution designed to maximize the performance advantages of silicon carbide devices in high-power applications. It enables a direct thermal path from the device to an external heatsink, decoupling heat dissipation from the PCB and improving thermal performance, power density, and layout flexibility. The package also reduces parasitic inductance, supports fast switching, and simplifies automated assembly, while its emerging industry‑standard footprint allows scalable, multi-source designs and reduced system complexity.