DRAM

결과: 2,699
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 타입 메모리 크기 데이터 버스 너비 최대 클록 주파수 패키지/케이스 조직 액세스 시간 공급 전압 - 최소 공급 전압 - 최대 최저 작동온도 최고 작동온도 시리즈 포장
ISSI DRAM 1G, 1.35V, DDR3L, 128Mx8, 1866MT/s at 13-13-13, 78 ball BGA (8mm x10.5mm) RoHS 81재고 상태
최소: 1
배수: 1

SDRAM - DDR3L 1 Gbit 8 bit 1.066 GHz BGA-78 128 M x 8 20 ns 1.425 V 1.575 V 0 C + 95 C
ISSI DRAM 1G, 1.35V, DDR3L, 128Mx8, 1600MT/s at 10-10-10, 78 ball BGA (8mm x10.5mm) RoHS 126재고 상태
최소: 1
배수: 1

SDRAM - DDR3L 1 Gbit 8 bit 1.066 GHz BGA-78 128 M x 8 20 ns 1.425 V 1.575 V 0 C + 95 C
AP Memory DRAM IoT RAM 256Mb OPI (x8,x16) DDR 250MHz, 1.8V, Ind. Temp., BGA24
8,590주문 중
최소: 1
배수: 1

PSRAM (Pseudo SRAM) 256 Mbit 8 bit / 16 bit 250 MHz BGA-24 32 M x 8/16 M x 16 1.62 V 1.98 V - 40 C + 85 C IoT RAM Tray

AP Memory DRAM 64Mb QSPI PSRAM Sync Serial x1/x4 SDR
23,660주문 중
최소: 1
배수: 1
: 3,000

PSRAM (Pseudo SRAM) 64 Mbit 4 bit / 1 bit 133 MHz SOP-8 8 M x 8 2.7 V 3.6 V - 40 C + 85 C IoT RAM Reel, Cut Tape, MouseReel

AP Memory DRAM 64Mb QSPI PSRAM Sync Serial x1/x4 SDR
65,901주문 중
최소: 1
배수: 1
: 3,000

PSRAM (Pseudo SRAM) 64 Mbit 4 bit / 1 bit 84 MHz SOP-8 8 M x 8 1.62 V 1.98 V - 40 C + 85 C IoT RAM Reel, Cut Tape, MouseReel
AP Memory DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24
14,400주문 중
최소: 1
배수: 1

PSRAM (Pseudo SRAM) 64 Mbit 8 bit 200 MHz BGA-24 8 M x 8 5.5 ns 1.62 V 1.98 V - 40 C + 85 C IoT RAM Tray
Alliance Memory DRAM DDR3, 4G, 256M X 16, 1.35V, 96-BALL FBGA, 800MHZ, Commercial Temp - Tape & Reel 10재고 상태
최소: 1
배수: 1
: 2,500

SDRAM - DDR3L 4 Gbit 16 bit 800 MHz FBGA-96 256 M x 16 20 ns 1.283 V 1.45 V 0 C + 95 C Reel, Cut Tape
Alliance Memory DRAM DDR1, 1G, 64M X 16, 2.5V, 60-BALL BGA, 166 MHZ, INDUSTRIAL TEMP - Tray 5재고 상태
최소: 1
배수: 1

SDRAM - DDR 1 Gbit 16 bit 166 MHz FBGA-60 64 M x 16 700 ps 2.3 V 2.7 V - 40 C + 85 C AS4C64M16D1A Tray
Alliance Memory DRAM LPDDR4, 2G, 128M x 16, 1.1V, 200 BALL TFBGA, 1600MHZ, ECC, AUTO TEMP - Tray 19재고 상태
최소: 1
배수: 1

SDRAM Mobile - LPDDR4 2 Gbit 16 bit 1.6 GHz FBGA-200 128 M x 16 3.5 ns 1.06 V 1.95 V - 40 C + 105 C Tray
Alliance Memory DRAM LPDDR4, 4G, 256M x 16, 1.1V, 200 BALL TFBGA, 1600MHZ, ECC, AUTO TEMP - Tray 5재고 상태
최소: 1
배수: 1

SDRAM - LPDDR4 4 Gbit 16 bit 1.6 GHz FBGA-200 256 M x 16 3.5 ns 1.06 V 1.95 V - 40 C + 105 C Tray
ISSI IS43LR16640C-6BL
ISSI DRAM 1G, 1.8V, Mobile DDR, 64Mx16, 166Mhz, 60 ball BGA (8mmx10mm) RoHS 255재고 상태
최소: 1
배수: 1

BGA-60
ISSI DRAM 512M (32Mx16) 166MHz 2.5v DDR SDRAM 100재고 상태
최소: 1
배수: 1

SDRAM - DDR 512 Mbit 16 bit 166 MHz TSOP-II-66 32 M x 16 6 ns 2.3 V 2.7 V - 40 C + 85 C IS43R16320D Tray
ISSI DRAM 256M (16Mx16) 200MHz 2.5v DDR SDRAM 5재고 상태
최소: 1
배수: 1

SDRAM - DDR 256 Mbit 32 bit 200 MHz LFBGA-144 8 M x 32 5 ns 2.3 V 2.7 V 0 C + 70 C IS43R32800D Tray
SMARTsemi DRAM DDR4, 8Gb, 1Gbx8, 1600Mhz, 3200Mbps, 1.2V, 78-ball FBGA, Industrial temp
210예상 2026-09-03
최소: 1
배수: 1

SDRAM - DDR4 8 Gbit 8 bit 1.6 GHz FBGA-78 1 G x 8 1.14 V 1.26 V - 40 C + 85 C
SMARTsemi DRAM DRAM DDR3(L) 4GB 256MX16 1866Mbps 1.35V/1.5V 96-FBGA Commercial
131예상 2026-09-28
최소: 1
배수: 1

SDRAM - DDR3L 4 Gbit 16 bit 933 MHz FBGA-96 256 M x 16 1.283 V 1.575 V 0 C + 85 C KTDM Tray
Kingston DRAM 96 ball FBGA DDR4 3200 (NY C)
100예상 2026-08-20
최소: 1
배수: 1

SDRAM - DDR4 8 Gb 3.2 Gb/s FBGA-96 512 M x 16 1.14 1.26 V 0 C + 95 C Tray
Intelligent Memory DRAM SDRAM, 256Mb, 3.3V, 16Mx16, 166MHz (166Mbps), -40C to +85C, TSOPII-54
324예상 2026-09-03
최소: 1
배수: 1

SDRAM 256 Mbit 16 bit 166 MHz TSOP-II-54 16 M x 16 5.4 ns 3 V 3.6 V - 40 C + 85 C IM2516SD Tray
Intelligent Memory DRAM DDR3 4Gb, 1.35V/1.5V, 256Mx16, 933MHz (1866Mbps), 0C to +95C, FBGA-96
627주문 중
최소: 1
배수: 1

SDRAM - DDR3L 4 Gbit 16 bit 933 MHz FBGA-96 256 M x 16 20 ns 1.283 V 1.45 V 0 C + 95 C IM4G16D3 Tray
Intelligent Memory DRAM ECC DDR3, 1Gb, 1.5V, 64Mx16, 667MHz (1333Mbps), -40C to +95C, FBGA-96
450주문 중
최소: 1
배수: 1

SDRAM - DDR3 1 Gbit 16 bit 667 MHz FBGA-96 64 M x 16 300 ps 1.425 V 1.575 V - 40 C + 95 C IME1G16D3 Tray
Intelligent Memory DRAM ECC SDRAM, 512Mb, 3.3V, 64Mx8, 133MHz (133Mbps), -40C to +85C, TSOPII-54
121예상 2026-08-20
최소: 1
배수: 1

SDRAM 512 Mbit 8 bit 133 MHz TSOP-II-54 64 M x 8 5.4 ns 3 V 3.6 V - 40 C + 85 C IME5108SD Tray
Intelligent Memory DRAM ECC SDRAM, 512Mb, 3.3V, 32Mx16, 133MHz (133Mbps), -40C to +85C, TSOPII-54
108예상 2026-10-20
최소: 1
배수: 1

SDRAM 512 Mbit 16 bit 133 MHz TSOP-II-54 32 M x 16 5.4 ns 3 V 3.6 V - 40 C + 85 C IME5116SD Tray
ISSI DRAM 256Mb, 1.8V, 400MHz 16Mx16 DDR2 SDRAM 56재고 상태
최소: 1
배수: 1

SDRAM - DDR2 256 Mbit 16 bit 400 MHz WBGA-84 16 M x 16 400 ps 1.7 V 1.9 V - 40 C + 85 C IS43DR16160B Reel
ISSI DRAM 512M, 2.5V, DDR 32Mx16, 200MHz, 66 pin TSOP II (400 mil) RoHS 28재고 상태
최소: 1
배수: 1

SDRAM - DDR 512 Mbit 16 bit 200 MHz TSOP-II-66 32 M x 16 5 ns 2.3 V 2.7 V 0 C + 70 C IS43R16320E
ISSI DRAM 256Mb, 1.8V, 267MHz 16Mx16 DDR2 SDRAM 49재고 상태
최소: 1
배수: 1

SDRAM - DDR2 256 Mbit 16 bit 266 MHz BGA-84 16 M x 16 500 ps 1.7 V 1.9 V 0 C + 85 C IS43DR16160B Tray
ISSI DRAM 256M (16Mx16) 166MHz 2.5v DDR SDRAM 8재고 상태
최소: 1
배수: 1

SDRAM - DDR 256 Mbit 16 bit 166 MHz TSOP-II-66 16 M x 16 6 ns 2.3 V 2.7 V 0 C + 70 C IS43R16160D Tray