|
|
SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), RoHS
- IS61WV51216EEBLL-10BLI
- ISSI
-
1:
₩25,864.8
-
533재고 상태
|
Mouser 부품 번호
870-61W51216EEBLL1BI
|
ISSI
|
SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), RoHS
|
|
533재고 상태
|
|
|
₩25,864.8
|
|
|
₩23,992.8
|
|
|
₩23,228.4
|
|
|
₩22,136.4
|
|
|
₩21,590.4
|
|
최소: 1
배수: 1
|
|
|
8 Mbit
|
512 k x 16
|
10 ns
|
Parallel
|
3.6 V
|
2.4 V
|
95 mA
|
- 40 C
|
+ 85 C
|
SMD/SMT
|
TFBGA-48
|
|
|
|
|
SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Pin TSOP I, ERR1/2 pins, RoHS
- IS61WV51216EEBLL-10T2LI
- ISSI
-
1:
₩24,991.2
-
86재고 상태
|
Mouser 부품 번호
870-61W51216EEBL1T2I
|
ISSI
|
SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Pin TSOP I, ERR1/2 pins, RoHS
|
|
86재고 상태
|
|
|
₩24,991.2
|
|
|
₩23,181.6
|
|
|
₩22,448.4
|
|
|
₩21,387.6
|
|
|
₩13,930.8
|
|
최소: 1
배수: 1
|
|
|
8 Mbit
|
512 k x 16
|
10 ns
|
Parallel
|
3.6 V
|
2.4 V
|
95 mA
|
- 40 C
|
+ 85 C
|
SMD/SMT
|
TSOP-48
|
|
|
|
|
SRAM 8M 8,10ns 2.4-3.6V 512Kx16 LP Asyn SRAM
- IS61WV51216EEBLL-10TLI-TR
- ISSI
-
1:
₩24,991.2
-
2,483재고 상태
|
Mouser 부품 번호
870-61W51216EBL1TLIT
|
ISSI
|
SRAM 8M 8,10ns 2.4-3.6V 512Kx16 LP Asyn SRAM
|
|
2,483재고 상태
|
|
|
₩24,991.2
|
|
|
₩23,166
|
|
|
₩22,432.8
|
|
|
₩21,387.6
|
|
|
₩20,857.2
|
|
|
₩20,857.2
|
|
최소: 1
배수: 1
:
1,000
|
|
|
8 Mbit
|
512 k x 16
|
10 ns
|
Parallel
|
3.6 V
|
2.4 V
|
95 mA
|
- 40 C
|
+ 85 C
|
SMD/SMT
|
TSOP-44
|
Reel, Cut Tape, MouseReel
|
|
|
|
SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,44 Pin TSOP II, RoHS
- IS61WV51216EEBLL-10TLI
- ISSI
-
1:
₩24,991.2
-
1,410재고 상태
|
Mouser 부품 번호
870-61W51216EEBLL1TI
|
ISSI
|
SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,44 Pin TSOP II, RoHS
|
|
1,410재고 상태
|
|
|
₩24,991.2
|
|
|
₩23,166
|
|
|
₩22,432.8
|
|
|
₩21,387.6
|
|
|
₩20,857.2
|
|
최소: 1
배수: 1
|
|
|
8 Mbit
|
512 k x 16
|
10 ns
|
Parallel
|
3.6 V
|
2.4 V
|
95 mA
|
- 40 C
|
+ 85 C
|
SMD/SMT
|
TSOP-44
|
|
|
|
|
SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), ERR1/2 pins, RoHS
- IS61WV51216EEBLL-10B2LI-TR
- ISSI
-
2,500:
₩14,086.8
-
비재고 리드 타임 12 주
|
Mouser 부품 번호
870-61W51216EBL1B2IT
|
ISSI
|
SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), ERR1/2 pins, RoHS
|
|
비재고 리드 타임 12 주
|
|
최소: 2,500
배수: 2,500
:
2,500
|
|
|
8 Mbit
|
512 k x 16
|
10 ns
|
Parallel
|
3.6 V
|
2.4 V
|
95 mA
|
- 40 C
|
+ 85 C
|
SMD/SMT
|
TFBGA-48
|
Reel
|
|
|
|
SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Pin TSOP I, ERR1/2 pins, RoHS
- IS61WV51216EEBLL-10T2LI-TR
- ISSI
-
1,500:
₩13,618.8
-
비재고 리드 타임 12 주
|
Mouser 부품 번호
870-61W51216EBL1T2IT
|
ISSI
|
SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Pin TSOP I, ERR1/2 pins, RoHS
|
|
비재고 리드 타임 12 주
|
|
최소: 1,500
배수: 1,500
:
1,500
|
|
|
8 Mbit
|
512 k x 16
|
10 ns
|
Parallel
|
3.6 V
|
2.4 V
|
95 mA
|
- 40 C
|
+ 85 C
|
SMD/SMT
|
TSOP-48
|
Reel
|
|
|
|
SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), ERR1/2 pins, RoHS
- IS61WV51216EEBLL-10B2LI
- ISSI
-
480:
₩14,086.8
-
비재고 리드 타임 12 주
|
Mouser 부품 번호
870-61W51216EEBL1B2I
|
ISSI
|
SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), ERR1/2 pins, RoHS
|
|
비재고 리드 타임 12 주
|
|
최소: 480
배수: 480
|
|
|
8 Mbit
|
512 k x 16
|
10 ns
|
Parallel
|
3.6 V
|
2.4 V
|
95 mA
|
- 40 C
|
+ 85 C
|
SMD/SMT
|
TFBGA-48
|
|
|
|
|
SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), RoHS
- IS61WV51216EEBLL-10BLI-TR
- ISSI
-
2,500:
₩14,086.8
-
비재고 리드 타임 12 주
|
Mouser 부품 번호
870-61W51216EEBL1BIT
|
ISSI
|
SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), RoHS
|
|
비재고 리드 타임 12 주
|
|
최소: 2,500
배수: 2,500
:
2,500
|
|
|
8 Mbit
|
512 k x 16
|
10 ns
|
Parallel
|
3.6 V
|
2.4 V
|
95 mA
|
- 40 C
|
+ 85 C
|
SMD/SMT
|
TFBGA-48
|
Reel
|
|
대한민국