Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.  

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결과: 43
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설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다.
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기술
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패키지/케이스
트랜지스터 극성
STMicroelectronics SiC MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
데이터시트
2,309재고 상태
MouseReel 사용가능
최소: 1
배수: 1
: 3,000

SiC MOSFETS SiC SMD/SMT PowerFLAT-5 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
데이터시트
7재고 상태
600예상 2027-04-02
최소: 1
배수: 1
: 600

SiC MOSFETS
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
데이터시트
11재고 상태
1,200주문 중
MouseReel 사용가능
최소: 1
배수: 1
: 600

SiC MOSFETS SiC SMD/SMT HU3PAK-7 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
데이터시트
542재고 상태
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
데이터시트
448재고 상태
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
데이터시트
311재고 상태
600주문 중
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole Hip247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
데이터시트
292재고 상태
600예상 2027-05-21
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP247-3 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
데이터시트
674재고 상태
최소: 1
배수: 1
: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
데이터시트
246재고 상태
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
데이터시트
342재고 상태
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP-247-3 N-Channel


STMicroelectronics SiC MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
데이터시트
487재고 상태
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
데이터시트
481재고 상태
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP247-4 N-Channel
STMicroelectronics SiC MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
데이터시트
1,414재고 상태
최소: 1
배수: 1
: 1,800

SiC MOSFETS SiC SMD/SMT TOLL-8 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
데이터시트
11재고 상태
1,000예상 2027-03-26
최소: 1
배수: 1
: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
데이터시트
22재고 상태
1,000예상 2027-02-12
MouseReel 사용가능
최소: 1
배수: 1
: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
데이터시트
13재고 상태
1,200주문 중
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
데이터시트
21재고 상태
600주문 중
MouseReel 사용가능
최소: 1
배수: 1
: 600

SiC MOSFETS SiC SMD/SMT H2PAK-2 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
데이터시트
249재고 상태
600예상 2027-03-05
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
데이터시트
20재고 상태
1,200예상 2027-01-29
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
데이터시트
763재고 상태
MouseReel 사용가능
최소: 1
배수: 1
: 1,000

SiC MOSFETS SiC SMD/SMT N-Channel
STMicroelectronics SiC MOSFET Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
데이터시트
459재고 상태
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole HiP-247-3 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
데이터시트
334재고 상태
최소: 1
배수: 1

SiC MOSFETS SiC Through Hole N-Channel
STMicroelectronics SiC MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
데이터시트
1,301재고 상태
MouseReel 사용가능
최소: 1
배수: 1
: 3,000

SiC MOSFETS SiC SMD/SMT PowerFLAT-5 N-Channel
STMicroelectronics MOSFET N-channel 40 V, 0.85 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x
데이터시트
4,893재고 상태
MouseReel 사용가능
최소: 1
배수: 1
: 3,000

MOSFETs Si SMD/SMT PowerFLAT5x6-8 N-Channel
STMicroelectronics SiC MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
데이터시트
9재고 상태
1,800예상 2027-01-29
최소: 1
배수: 1
: 1,800

SiC MOSFETS SiC SMD/SMT TOLL-8 N-Channel