200V to 250V HEXFET® Power MOSFETs

Infineon 200V to 250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200V to 250V HEXFET Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with fast switching speed and ruggedized device design provides an extremely efficient and reliable device for use in a wide variety of applications.

결과: 26
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 기술 장착 스타일 패키지/케이스 트랜지스터 극성 채널 수 Vds - 드레인 소스 항복 전압 Id - 연속 드레인 전류 Rds On - 드레인 소스 저항 Vgs - 게이트 소스 전압 Vgs th - 게이트 소스 역치 전압 Qg - 게이트 전하 최저 작동온도 최고 작동온도 Pd - 전력 발산 채널 모드 포장

Infineon Technologies MOSFET MOSFT 200V 49A 40mOhm 156nCAC 23,097재고 상태
₩6,177.6
₩3,135.6
₩2,620.8
₩2,215.2
₩2,199.6
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 50 A 40 mOhms 20 V 4 V 156 nC - 55 C + 175 C 300 W Enhancement Tube

Infineon Technologies MOSFET MOSFT 200V 30A 75mOhm 82nCAC 5,415재고 상태
₩5,007.6
₩2,496
₩2,043.6
₩1,762.8
최소: 1
배수: 1
최대: 500
Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 30 A 75 mOhms 20 V 4 V 82 nC - 55 C + 175 C 214 W Enhancement Tube
Infineon Technologies IRFB4332PBFXKMA1
Infineon Technologies MOSFET TRENCH >=100V 299재고 상태
컷 테이프
₩8,424
₩4,383.6
₩3,993.6
₩3,338.4
₩3,338.4
최소: 1
배수: 1
: 1,000
Reel, Cut Tape

Infineon Technologies MOSFET IR FET >60-400V 870재고 상태
800예상 2026-11-12
₩11,606.4
₩6,224.4
₩5,709.6
₩5,694
₩5,148
최소: 1
배수: 1
Si Through Hole TO-247AC-3 N-Channel 1 Channel 250 V 93 A 17.5 mOhms 20 V 5 V 180 nC - 55 C + 175 C 520 W Enhancement Tube
Infineon Technologies MOSFET MOSFT 200V 76A 23.2mOhm 100nC Qg 7,817재고 상태
컷 테이프
₩8,221.2
₩4,274.4
₩3,900
₩3,244.8
₩3,244.8
최소: 1
배수: 1
: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 72 A 22 mOhms 20 V 1.8 V 100 nC - 55 C + 175 C 375 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFT 200V 62A 26mOhm 70nC Qg 8,524재고 상태
7,200주문 중
컷 테이프
₩7,129.2
₩3,666
₩3,322.8
₩2,667.6
₩2,667.6
최소: 1
배수: 1
최대: 2,400
: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 62 A 26 mOhms 30 V 5 V 70 nC - 40 C + 175 C 330 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies IRFB4227PBFXKMA1
Infineon Technologies MOSFET IR FET >60-400V 4,406재고 상태
4,000예상 2026-10-07
₩5,553.6
₩2,792.4
₩2,527.2
₩2,043.6
최소: 1
배수: 1
Si Tube
Infineon Technologies IRFP4668PBFXKMA1
Infineon Technologies MOSFET IR FET >60-400V 13,557재고 상태
28,400주문 중
₩11,497.2
₩6,162
₩5,647.2
₩5,070
최소: 1
배수: 1
Si Through Hole TO-247AC-3 N-Channel 1 Channel 200 V 130 A 9.7 mOhms 30 V 3 V 161 nC - 55 C + 175 C 520 W Enhancement Tube
Infineon Technologies MOSFET IR FET >60-400V 714재고 상태
5,000주문 중
₩8,034
₩4,165.2
₩3,790.8
₩3,135.6
최소: 1
배수: 1
Si Through Hole TO-220AB-3 N-Channel 1 Channel 200 V 76 A 20 mOhms 20 V 5 V 69 nC - 55 C + 175 C 375 W Enhancement Tube
Infineon Technologies MOSFET MOSFT 200V 0.6A 2200mOhm 3.9nC 21,207재고 상태
컷 테이프
₩1,185.6
₩535.1
₩471.1
₩358.8
₩274.6
최소: 1
배수: 1
: 3,000
Si SMD/SMT TSOP-6 N-Channel 1 Channel 200 V 600 mA 2.2 Ohms 30 V 2 V 3.9 nC - 55 C + 150 C 2 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFT 200V 18A 150mOhm 44.7nC 30,167재고 상태
18,000예상 2027-01-28
₩3,213.6
₩1,700.4
₩1,305.7
₩1,026.5
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 18 A 150 mOhms 20 V 2 V 44.7 nC - 55 C + 175 C 150 W Enhancement Tube

Infineon Technologies MOSFET 200V, 3.7A, 78 mOhm 29 nC Qg, SO-8 2,497재고 상태
4,000예상 2026-10-08
컷 테이프
₩3,775.2
₩1,840.8
₩1,653.6
₩1,315.1
₩1,124.8
최소: 1
배수: 1
: 4,000
Si SMD/SMT SOIC-8 N-Channel 1 Channel 200 V 3.7 A 78 mOhms 20 V 4 V 28 nC - 55 C + 150 C 2.5 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFT 200V 44A 54mOhm 60nC 4,279재고 상태
₩4,539.6
₩2,511.6
₩1,996.8
₩1,872
₩1,315.1
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 44 A 54 mOhms 30 V 1.8 V 91 nC - 55 C + 175 C 3.8 W Enhancement Tube
Infineon Technologies MOSFET MOSFT 200V 100mOhm 18A 18nC Qg for Aud 8,265재고 상태
₩4,024.8
₩1,965.6
₩1,653.6
₩1,388.4
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 18 A 100 mOhms 20 V 1.8 V 18 nC - 55 C + 175 C 100 W Enhancement Tube

Infineon Technologies MOSFET MOSFT 200V 49A 40mOhm 156nCAC 3,361재고 상태
3,200예상 2026-10-22
₩6,115.2
₩3,822
₩3,104.4
₩2,527.2
₩2,230.8
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 50 A 40 mOhms 20 V 1.8 V 156 nC - 55 C + 175 C 300 W Enhancement Tube
Infineon Technologies MOSFET MOSFT 200V 44A 54mOhm 60nC 2,713재고 상태
컷 테이프
₩6,942
₩3,572.4
₩3,244.8
₩2,589.6
₩2,589.6
최소: 1
배수: 1
: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 44 A 54 mOhms 30 V 5 V 60 nC - 55 C + 175 C 320 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFT 250V 45A 48mOhm 72nC Qg 6,031재고 상태
컷 테이프
₩7,222.8
₩3,712.8
₩3,369.6
₩2,714.4
₩2,714.4
최소: 1
배수: 1
: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 250 V 45 A 48 mOhms 30 V 5 V 72 nC - 40 C + 175 C 330 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFT 200V 24A 78mOhm 25nC Qg 2,372재고 상태
38,400주문 중
컷 테이프
₩5,413.2
₩2,714.4
₩2,449.2
₩1,825.2
최소: 1
배수: 1
최대: 3,000
: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 24 A 77.5 mOhms 20 V 5 V 38 nC - 55 C + 175 C 144 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies IRFP4227PBFXKMA1
Infineon Technologies MOSFET IR FET >60-400V 468재고 상태
2,000예상 2026-10-13
₩9,578.4
₩5,038.8
₩4,695.6
₩3,978
최소: 1
배수: 1
Si Tube
Infineon Technologies IRFB4229PBFXKMA1
Infineon Technologies MOSFET IR FET >60-400V 822재고 상태
2,000주문 중
₩6,926.4
₩3,541.2
₩3,213.6
₩2,932.8
최소: 1
배수: 1
Si Through Hole TO-220AB-3 N-Channel 1 Channel 250 V 46 A 46 mOhms 30 V 5 V 72 nC - 40 C + 175 C 330 W Enhancement Tube
Infineon Technologies MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC 70재고 상태
10,000예상 2027-01-28
₩2,152.8
₩1,003.1
₩890.8
₩692.6
₩691.1
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 9.3 A 300 mOhms 20 V 2 V 23.3 nC - 55 C + 175 C 82 W Enhancement Tube
Infineon Technologies MOSFET MOSFT 200V 18A 150mOhm 44.7nC 242재고 상태
36,800주문 중
컷 테이프
₩3,307.2
₩1,591.2
₩1,421.2
₩1,260.5
₩1,046.8
₩970.3
최소: 1
배수: 1
: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 18 A 150 mOhms 20 V 2 V 44.7 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFT 200V 24A 78mOhm 25nC Qg 1,447재고 상태
24,000주문 중
컷 테이프
₩4,227.6
₩2,090.4
₩1,747.2
₩1,502.3
₩1,474.2
₩1,302.6
최소: 1
배수: 1
: 3,000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 200 V 24 A 78 mOhms 20 V 1.8 V 25 nC - 55 C + 175 C 144 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET MOSFT 200V 30A 75mOhm 82nCAC
42,780주문 중
₩4,570.8
₩2,652
₩2,199.6
₩1,872
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 30 A 75 mOhms 20 V 1.8 V 82 nC - 55 C + 175 C 214 W Enhancement Tube
Infineon Technologies IRFP4229PBFXKMA1
Infineon Technologies MOSFET IR FET >60-400V 800재고 상태
₩9,422.4
₩4,945.2
₩4,492.8
₩3,712.8
최소: 1
배수: 1
Si Through Hole TO-247AC-3 N-Channel 1 Channel 250 V 44 A 46 mOhms 30 V 5 V 72 nC - 40 C + 175 C 310 W Enhancement Tube