결과: 35
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 기술 장착 스타일 패키지/케이스 트랜지스터 극성 채널 수 Vds - 드레인 소스 항복 전압 Id - 연속 드레인 전류 Rds On - 드레인 소스 저항 Vgs - 게이트 소스 전압 Vgs th - 게이트 소스 역치 전압 Qg - 게이트 전하 최저 작동온도 최고 작동온도 Pd - 전력 발산 채널 모드 상표명 포장

Infineon Technologies MOSFET HIGH POWER_LEGACY 803재고 상태
₩7,370.1
₩4,833.6
₩3,607.6
₩3,015.7
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms 20 V 3.5 V 44 nC - 55 C + 150 C 176 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM 3,350재고 상태
컷 테이프
₩4,608.1
₩3,015.7
₩2,578.8
₩2,282.9
₩2,212.4
릴
₩2,170.2
최소: 1
배수: 1
: 3,000
Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 22.4 A 162 mOhms 20 V 3.5 V 44 nC - 40 C + 150 C 176 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET LOW POWER_PRC/PRFRM 411재고 상태
₩3,170.7
₩2,015.2
₩1,357.1
₩1,097.8
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 7.3 A 540 mOhms 20 V 3.5 V 12 nC - 55 C + 150 C 28 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_PRC/PRFRM 3재고 상태
480예상 2026-12-24
₩6,186.4
₩4,044.4
₩3,015.7
₩2,522.5
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20.2 A 171 mOhms 20 V 3.5 V 37 nC - 55 C + 150 C 151 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_PRC/PRFRM 545재고 상태
₩5,129.5
₩3,339.8
₩2,339.3
₩1,958.8
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20.2 A 190 mOhms 20 V 3.5 V 37 nC - 55 C + 150 C 151 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_LEGACY 1,971재고 상태
컷 테이프
₩2,508.4
₩1,189.4
₩1,061.1
₩835.7
릴
₩683.5
최소: 1
배수: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 7.3 A 600 mOhms 20 V 4 V 12 nC - 55 C + 150 C 63 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_PRC/PRFRM 666재고 상태
₩4,622.2
₩3,001.6
₩2,071.5
₩1,719.2
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20.2 A 190 Ohms 20 V 3.5 V 37 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM 500재고 상태
₩7,933.8
₩5,199.9
₩3,875.3
₩3,241.2
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 30 A 113 mOhms 20 V 3.5 V 56 nC - 55 C + 150 C 219 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 7.7A TO220FP-3 970재고 상태
₩3,945.8
₩2,071.5
₩1,747.4
₩1,409.2
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 13.8 A 252 mOhms 20 V 3.5 V 25.5 nC - 55 C + 150 C 32 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM 471재고 상태
₩9,399.4
₩6,158.2
₩4,622.2
₩3,917.6
₩3,734.4
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37.9 A 89 mOhms 20 V 3.5 V 70 nC - 55 C + 150 C 278 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM 377재고 상태
₩8,652.5
₩5,665
₩4,171.2
₩3,692.1
₩3,311.6
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37.9 A 89 mOhms 20 V 3.5 V 70 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM 760재고 상태
₩6,975.5
₩4,579.9
₩3,410.3
₩2,550.7
₩2,494.3
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 30 A 113 mOhms 20 V 3.5 V 56 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_PRICE/PERFORM 4,907재고 상태
컷 테이프
₩5,960.9
₩3,029.8
₩2,747.9
₩2,297
릴
₩2,156.1
최소: 1
배수: 1
: 1,000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 23.8 A 160 mOhms 20 V 4 V 44 nC - 55 C + 150 C 176 W Enhancement CoolMOS Reel, Cut Tape

Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM 426재고 상태
₩16,107.2
₩11,386.3
₩9,498
₩8,441.1
₩8,004.3
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 77.5 A 37 mOhms 20 V 3.5 V 170 nC - 55 C + 150 C 481 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM 1,882재고 상태
₩16,149.4
₩10,371.7
₩9,498
₩8,342.5
₩8,004.3
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 77.5 A 37 mOhms 20 V 3.5 V 170 nC - 55 C + 150 C 481 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM 873재고 상태
₩8,525.7
₩4,368.5
₩4,002.1
₩3,917.6
₩3,480.7
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 37.9 A 89 mOhms 20 V 3.5 V 70 nC - 55 C + 150 C 278 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_LEGACY 341재고 상태
₩6,891
₩3,466.6
₩2,649.3
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms 20 V 3.5 V 44 nC - 55 C + 150 C 176 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 10.4A TO220FP-3 30재고 상태
₩5,467.7
₩3,565.3
₩2,592.9
₩2,170.2
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms 20 V 3.5 V 44 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 10.4A TO220FP-3 990재고 상태
₩5,608.6
₩2,903
₩2,635.2
₩2,127.9
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms 20 V 3.5 V 44 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 8.6A TO220FP-3 443재고 상태
₩4,326.2
₩2,156.1
₩1,987
₩1,550.1
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 16.8 A 538 mOhms 20 V 4 V 31 nC - 55 C + 150 C 33 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 7.7A TO220FP-3 409재고 상태
₩3,945.8
₩2,550.7
₩1,747.4
₩1,409.2
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 13.8 A 252 mOhms 20 V 3.5 V 25.5 nC - 55 C + 150 C 32 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 10.6A DPAK-2 1,038재고 상태
2,500예상 2027-02-11
컷 테이프
₩3,058
₩1,930.6
₩1,309.1
₩1,061.1
릴
₩889.2
최소: 1
배수: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 10.6 A 380 mOhms 20 V 3.5 V 19 nC - 55 C + 150 C 31 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM 514재고 상태
₩9,808
₩6,426
₩4,734.9
₩4,199.4
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37.9 A 89 mOhms 20 V 3.5 V 70 nC - 55 C + 150 C 278 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM 263재고 상태
₩7,933.8
₩5,199.9
₩3,875.3
₩2,931.1
₩2,846.6
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 30 A 113 mOhms 20 V 3.5 V 56 nC - 55 C + 150 C 219 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM 181재고 상태
₩10,005.3
₩6,693.7
₩5,383.1
₩4,777.2
₩4,255.8
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 53.5 A 63 mOhms 20 V 3.5 V 100 nC - 55 C + 150 C 391 W Enhancement CoolMOS Tube