High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

결과: 69
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 장착 스타일 패키지/케이스 채널 수 Vds - 드레인 소스 항복 전압 Id - 연속 드레인 전류 Rds On - 드레인 소스 저항 Vgs - 게이트 소스 전압 Vgs th - 게이트 소스 역치 전압 Qg - 게이트 전하 최저 작동온도 최고 작동온도 Pd - 전력 발산 채널 모드 자격 상표명
onsemi SiC MOSFET 650V/40MOSICFETG3TO247-4 3,278재고 상태
₩27,902.2
₩16,459.5
최소: 1
배수: 1
Through Hole TO-247-4 1 Channel 650 V 54 A 52 mOhms - 25 V, + 25 V 4 V 43 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 650V/80MOSICFETG3TO247 626재고 상태
₩17,671.4
₩9,934.9
₩9,216.2
₩8,694.8
최소: 1
배수: 1
Through Hole TO-247-3 1 Channel 650 V 31 A 100 mOhms - 12 V, + 12 V 6 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 750V/60MOSICFETG4TO263 1,266재고 상태
컷 테이프
₩11,090.4
₩6,101.8
₩5,932.7
₩5,721.4
릴
₩5,721.4
₩4,946.3
최소: 1
배수: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 25.8 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 128 W Enhancement SiC FET
onsemi SiC MOSFET 650V/40MOSICFETG3TO220-3 976재고 상태
₩28,747.7
₩17,220.4
₩16,205.8
최소: 1
배수: 1
Through Hole TO-220-3 1 Channel 650 V 54 A 52 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 650V/80MOSICFETG3TO247-4 583재고 상태
₩18,178.7
₩10,202.6
₩9,469.8
₩8,976.6
최소: 1
배수: 1
Through Hole TO-247-4 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 1200V/80MOSICFETG3TO24 1,142재고 상태
₩29,818.7
₩17,925
최소: 1
배수: 1
Through Hole TO-247-3 1 Channel 1.2 kV 33 A 100 mOhms - 25 V, + 25 V 6 V 51 nC - 55 C + 175 C 254.2 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 650V/30MOSICFETG3TO220-3 892재고 상태
₩36,160.1
₩22,927.7
최소: 1
배수: 1
Through Hole TO-220-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 5 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 650V/40MOSICFETG3TO247 1,166재고 상태
₩27,493.5
₩16,163.5
최소: 1
배수: 1
Through Hole TO-247-3 1 Channel 650 V 54 A 42 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 650V/80MOSICFETG3TO220 475재고 상태
₩16,896.3
₩9,737.6
₩9,004.8
₩8,272
최소: 1
배수: 1
Through Hole TO-220-3 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 750V/44MOSICFETG4TO263 648재고 상태
컷 테이프
₩19,771.1
₩11,315.9
₩10,709.9
릴
₩10,709.9
최소: 1
배수: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 35.6 A 56 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 181 W Enhancement SiC FET
onsemi SiC MOSFET 1200V/80MOSICFETG3TO26 618재고 상태
컷 테이프
₩27,098.9
₩16,995
₩15,867.6
릴
₩15,867.6
최소: 1
배수: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 28.8 A 85 mOhms - 25 V, + 25 V 6 V 23 nC - 55 C + 175 C 190 W Enhancement SiC FET
onsemi SiC MOSFET 650V/80MOSICFETG3TO247-3 684재고 상태
₩17,037.2
₩9,371.2
₩9,357.1
₩8,708.9
최소: 1
배수: 1
Through Hole TO-247-3 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 750V/60MOSICFETG4TO247-4 562재고 상태
₩18,573.3
₩10,315.3
₩9,723.5
최소: 1
배수: 1
Through Hole TO-247-4 1 Channel 750 V 28 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 650V/30MOSICFETG3TO220 335재고 상태
1,000예상 2026-11-13
₩37,470.6
₩30,001.9
₩25,957.5
₩22,927.7
최소: 1
배수: 1
Through Hole TO-220-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 1200V/40MOSICFETG3TO247-3 202재고 상태
₩41,402.3
₩30,903.8
₩30,791
₩27,225.7
최소: 1
배수: 1
Through Hole TO-247-3 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement SiC FET
onsemi SiC MOSFET 650V/30MOSICFETG3TO247-3 513재고 상태
₩38,062.5
₩23,068.6
최소: 1
배수: 1
Through Hole TO-247-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 750V/60MOSICFETG4TO247 1,242재고 상태
₩19,968.4
₩13,006.9
₩11,315.9
₩10,160.3
₩9,399.4
최소: 1
배수: 1
Through Hole TO-247-3 1 Channel 750 V 28 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 750V/11MOSICFETG4TO263-7 279재고 상태
컷 테이프
₩41,684.1
₩33,017.6
₩30,368.3
₩27,451.2
릴
₩27,451.2
최소: 1
배수: 1
: 800
SMD/SMT D2PAK-7L 1 Channel 750 V 104 A 11 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 357 W Enhancement SiC FET
onsemi SiC MOSFET 750V/18MOSICFETG4TO263-7 237재고 상태
800예상 2027-11-11
컷 테이프
₩34,469
₩25,746.1
₩22,265.4
₩19,686.5
릴
₩19,686.5
최소: 1
배수: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 72 A 18 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 259 W Enhancement SiC FET
onsemi SiC MOSFET 1200V/150MOSICFETG3TO2 343재고 상태
컷 테이프
₩17,995.5
₩10,329.4
₩9,512.1
₩9,004.8
릴
₩9,004.8
최소: 1
배수: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 17 A 150 mOhms - 25 V, + 25 V 4.4 V 25.7 nC - 55 C + 175 C 136 W Enhancement SiC FET
onsemi SiC MOSFET 1200V/40MOSICFETG3TO24 382재고 상태
₩51,661.3
₩38,414.8
₩35,934.6
최소: 1
배수: 1
Through Hole TO-247-3 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 1700V/400MOSICFETG3TO263-7 26재고 상태
2,400예상 2027-01-15
컷 테이프
₩16,417.2
₩11,597.7
₩8,610.2
₩8,328.4
릴
₩8,032.4
최소: 1
배수: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.7 kV 7.6 A 410 mOhms - 25 V, + 25 V 6 V 23.1 nC - 55 C + 175 C 100 W Enhancement SiC FET
onsemi SiC MOSFET 650V/7MOSICFETG3TO247-4 445재고 상태
₩109,790.8
₩92,612.6
최소: 1
배수: 1
Through Hole TO-247-4 1 Channel 650 V 120 A 9 mOhms - 12 V, + 12 V 6 V 214 nC - 55 C + 175 C 789 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 1200V/16MOSICFETG3TO247-4 466재고 상태
₩99,560
₩80,704.9
최소: 1
배수: 1
Through Hole TO-247-4 1 Channel 1.2 kV 107 A 21 mOhms - 20 V, + 20 V 4 V 218 nC - 55 C + 175 C 517 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 1200V/9MOSICFETG3TO247-4 358재고 상태
₩99,235.9
₩78,309.2
최소: 1
배수: 1
Through Hole TO-247-4 1 Channel 1.2 kV 120 A 11 mOhms - 20 V, + 20 V 4 V 234 nC - 55 C + 175 C 789 W Enhancement AEC-Q101 SiC FET