결과: 43
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 기술 장착 스타일 패키지/케이스 트랜지스터 극성 채널 수 Vds - 드레인 소스 항복 전압 Id - 연속 드레인 전류 Rds On - 드레인 소스 저항 Vgs - 게이트 소스 전압 Vgs th - 게이트 소스 역치 전압 Qg - 게이트 전하 최저 작동온도 최고 작동온도 Pd - 전력 발산 채널 모드 상표명 포장
Infineon Technologies MOSFET HIGH POWER_NEW 1,980재고 상태
컷 테이프
₩10,315.3
₩5,524.1
₩5,059
₩4,805.4
₩4,537.6
릴
₩4,537.6
최소: 1
배수: 1
: 2,000
Si SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 33 A 75 mOhms 20 V 4 V 51 nC - 55 C + 150 C 188 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 816재고 상태
컷 테이프
₩10,470.4
₩5,608.6
₩5,143.6
₩4,904
릴
₩4,636.3
최소: 1
배수: 1
: 1,000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 31 A 70 mOhms 20 V 4.5 V 67 nC - 55 C + 150 C 156 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 3,336재고 상태
컷 테이프
₩5,044.9
₩2,733.8
₩2,268.8
₩1,972.9
₩1,902.4
릴
₩1,902.4
최소: 1
배수: 1
: 3,000
Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 14 A 153 mOhms 20 V 3.5 V 28 nC - 40 C + 150 C 85 W Enhancement CoolMOS Reel, Cut Tape

Infineon Technologies MOSFET HIGH POWER_NEW 695재고 상태
₩14,853
₩8,060.6
₩7,370.1
₩7,271.5
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 50 A 40 mOhms 20 V 3.5 V 109 nC - 55 C + 150 C 227 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1,321재고 상태
컷 테이프
₩7,313.7
₩3,790.7
₩3,452.5
₩3,156.6
₩3,043.9
릴
₩2,860.7
최소: 1
배수: 1
: 2,000
Si SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 24 A 105 mOhms 20 V 4 V 36 nC - 55 C + 150 C 140 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 3,440재고 상태
컷 테이프
₩11,330
₩6,115.9
₩5,622.7
₩5,453.6
₩5,143.6
릴
₩5,143.6
최소: 1
배수: 1
: 3,000
Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 40 A 60 mOhms 20 V 3.5 V 79 nC - 40 C + 150 C 219 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 2,492재고 상태
컷 테이프
₩10,907.2
₩5,862.3
₩5,383.1
₩5,171.8
₩4,889.9
릴
₩4,889.9
최소: 1
배수: 1
: 2,000
Si SMD/SMT HSOF-8 N-Channel 1 Channel 600 V 44 A 55 mOhms 20 V 4 V 67 nC - 55 C + 150 C 236 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 2,595재고 상태
컷 테이프
₩5,989.1
₩3,537.1
₩2,888.9
₩2,409.7
₩2,325.2
릴
₩2,184.3
최소: 1
배수: 1
: 3,000
Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 16 A 160 mOhms 20 V 3.5 V 31 nC - 40 C + 150 C 95 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 678재고 상태
₩7,243.3
₩3,748.5
₩3,410.3
₩2,987.5
₩2,804.3
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11 A 125 mOhms 20 V 3.5 V 36 nC - 55 C + 150 C 32 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 2,895재고 상태
컷 테이프
₩6,609.1
₩4,354.4
₩3,973.9
₩3,396.2
릴
₩3,396.2
최소: 1
배수: 1
: 3,000
Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 25 A 95 mOhms 20 V 3.5 V 51 nC - 40 C + 150 C 147 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 420재고 상태
컷 테이프
₩7,370.1
₩3,818.9
₩3,480.7
₩3,072.1
릴
₩2,888.9
최소: 1
배수: 1
: 3,000
Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 22 A 115 mOhms 20 V 3.5 V 42 nC - 40 C + 150 C 124 W Enhancement Reel, Cut Tape

Infineon Technologies MOSFET HIGH POWER_NEW 268재고 상태
₩12,936.5
₩7,623.8
₩6,426
₩6,228.7
₩5,862.3
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 36 A 60 mOhms 10 V 3.5 V 68 nC - 55 C + 150 C 171 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 577재고 상태
컷 테이프
₩14,486.6
₩8,018.3
₩7,539.2
₩7,525.1
₩7,130.6
릴
₩7,130.6
최소: 1
배수: 1
: 2,000
Si SMD/SMT HSOF-8 N-Channel 1 Channel 600 V 52 A 45 mOhms 20 V 4 V 79 nC - 55 C + 150 C 270 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_NEW 712재고 상태
₩4,763.1
₩2,381.5
₩2,156.1
₩1,733.3
₩1,648.8
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9 A 237 mOhms 20 V 3.5 V 18 nC - 55 C + 150 C 52 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 250재고 상태
₩14,063.8
₩9,610.7
₩7,933.8
₩7,102.4
₩6,679.6
최소: 1
배수: 1
Si Through Hole N-Channel 1 Channel 650 V 50 A 41 mOhms 20 V 4.5 V 102 nC - 55 C + 150 C 227 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 4,378재고 상태
3,000예상 2026-11-30
컷 테이프
₩13,612.9
₩7,623.8
₩7,088.3
₩6,975.5
릴
₩6,609.1
최소: 1
배수: 1
: 1,000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 50 A 40 mOhms 20 V 4 V 107 nC - 55 C + 150 C 227 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 3,632재고 상태
컷 테이프
₩5,397.2
₩2,888.9
₩2,621.1
₩2,156.1
릴
₩2,029.2
최소: 1
배수: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 16 A 145 mOhms 20 V 3.5 V 31 nC - 55 C + 150 C 83 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 974재고 상태
₩7,186.9
₩3,720.3
₩3,184.8
₩2,804.3
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 125 mOhms 20 V 3.5 V 36 nC - 55 C + 150 C 92 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1,341재고 상태
컷 테이프
₩7,962
₩4,157.1
₩3,790.7
₩3,410.3
릴
₩3,213
최소: 1
배수: 1
: 1,000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 21 A 105 mOhms 20 V 4.5 V 42 nC - 55 C + 150 C 106 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 2,404재고 상태
컷 테이프
₩4,904
₩2,480.2
₩2,282.9
₩1,846.1
릴
₩1,592.4
최소: 1
배수: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 14 A 144 mOhms 20 V 3.5 V 28 nC - 55 C + 150 C 76 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 518재고 상태
컷 테이프
₩10,653.6
₩5,721.4
₩5,242.2
₩5,030.8
₩4,749
릴
₩4,749
최소: 1
배수: 1
: 3,000
Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 33 A 66 mOhms 20 V 3.5 V 67 nC - 40 C + 150 C 189 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 638재고 상태
₩10,428.1
₩5,594.5
₩5,115.4
₩4,608.1
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 31 A 57 mOhms 20 V 3.5 V 67 nC - 55 C + 150 C 156 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 622재고 상태
₩9,991.2
₩6,200.5
₩5,622.7
₩4,777.2
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 90 mOhms 20 V 3.5 V 51 nC - 55 C + 150 C 125 W Enhancement Tube

Infineon Technologies MOSFET HIGH POWER_NEW 180재고 상태
₩27,437.1
₩16,346.7
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 101 A 18 mOhms 20 V 3.5 V 251 nC - 55 C + 150 C 416 W Enhancement Tube

Infineon Technologies MOSFET HIGH POWER_NEW 480재고 상태
₩22,406.3
₩12,696.9
₩12,598.2
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 77 A 24 mOhms 20 V 4 V 183 nC - 55 C + 150 C 320 W Enhancement Tube