DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.

결과: 113
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 기술 장착 스타일 패키지/케이스 트랜지스터 극성 채널 수 Vds - 드레인 소스 항복 전압 Id - 연속 드레인 전류 Rds On - 드레인 소스 저항 Vgs - 게이트 소스 전압 Vgs th - 게이트 소스 역치 전압 Qg - 게이트 전하 최저 작동온도 최고 작동온도 Pd - 전력 발산 채널 모드 상표명 포장
Toshiba MOSFET X33 Pb-F POWER MOSFET TRANSISTOR DPAK(OS) PD=130W F=1MHZ 966재고 상태
컷 테이프
₩6,598.8
₩3,369.6
₩3,057.6
₩2,605.2
릴
₩2,402.4
최소: 1
배수: 1
: 1,000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 15.8 A 230 mOhms 30 V 3 V 43 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET Power MOSFET N-Channel 2,200재고 상태
2,500예상 2026-11-16
컷 테이프
₩6,754.8
₩3,447.6
₩3,135.6
₩2,636.4
릴
₩2,480.4
최소: 1
배수: 1
: 2,500
Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 20 A 156 mOhms 30 V 3 V 55 nC - 55 C + 150 C 156 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET Power MOSFET N-Channel 7,439재고 상태
컷 테이프
₩2,964
₩1,418
₩1,266.7
₩1,000
릴
₩892.3
최소: 1
배수: 1
: 2,000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 5.8 A 890 mOhms 30 V 2.5 V 11 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC 4,463재고 상태
컷 테이프
₩3,260.4
₩1,575.6
₩1,404
₩1,333.8
릴
₩1,333.8
최소: 1
배수: 1
: 2,000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 6.2 A 820 mOhms 30 V 2.7 V 12 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET N-Ch 800V 1400pF 23nC 11.5A 45W 2,141재고 상태
₩7,644
₩3,946.8
₩3,416.4
₩2,995.2
₩2,932.8
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 11.5 A 380 mOhms 20 V 3 V 23 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube

Toshiba MOSFET DTMOSIV 600V 88mOhm 30.8A 230W 3000pF 53재고 상태
₩12,199.2
₩8,158.8
₩6,552
₩5,818.8
₩5,226
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30.8 A 73 mOhms 30 V 3.7 V 86 nC - 55 C + 150 C 230 W Enhancement DTMOSIV Tube
Toshiba MOSFET Power MOSFET N-Channel 151재고 상태
₩4,539.6
₩2,636.4
₩2,012.4
₩1,575.6
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 8 A 440 mOhms 30 V 3 V 22 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFET MOSFET NCh trr100 nsn 0.25ohm DTMOS 16재고 상태
100예상 2027-02-19
₩7,207.2
₩4,726.8
₩3,213.6
₩2,745.6
₩2,574
최소: 1
배수: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 13.7 A 250 mOhms 30 V 4.5 V 40 nC - 55 C + 150 C 40 W Enhancement DTMOSIV Tube

Toshiba MOSFET Power MOSFET N-Channel 34재고 상태
₩8,127.6
₩5,319.6
₩3,962.4
₩3,322.8
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 17.3 A 170 mOhms 30 V 2.5 V 45 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tube

Toshiba MOSFET MOSFET NChannel 068ohm DTMOS 6재고 상태
₩16,036.8
₩8,985.6
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 35 A 68 mOhms 30 V 3.5 V 100 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube
Toshiba MOSFET X33 Pb-F POWER MOSFET TRANSISTOR DPAK(OS) PD=80W F=1MHZ 1,788재고 상태
컷 테이프
₩4,446
₩2,199.6
₩1,981.2
₩1,591.2
₩1,531.9
릴
₩1,407.1
최소: 1
배수: 1
: 2,000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 7.8 A 670 mOhms 30 V 2.5 V 16 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET POWER MOSFET TRANSISTOR DTMOS DFN 8x8-OS PD=139W F=1MHZ 2,487재고 상태
컷 테이프
₩6,723.6
₩3,510
릴
₩2,464.8
최소: 1
배수: 1
: 2,500
Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 15.8 A 245 mOhms 30 V 3 V 43 nC - 55 C + 150 C 139 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET Power MOSFET N-Channel 1,611재고 상태
컷 테이프
₩3,712.8
₩1,809.6
₩1,622.4
₩1,290.1
₩1,221.5
릴
₩1,098.2
최소: 1
배수: 1
: 2,000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 8 A 440 mOhms 30 V 3 V 22 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET Pb-F POWER MOSFET TRANSISTOR TO-247 PD=297W F=1MHZ 363재고 상태
₩18,252
₩13,197.6
₩10,998
₩9,796.8
₩9,157.2
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 40 mOhms 30 V 4 V 85 nC + 150 C 297 W Enhancement Tube

Toshiba MOSFET Power MOSFET N-Channel 4,086재고 상태
₩14,648.4
₩10,686
₩10,155.6
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38.8 A 62 mOhms 30 V 3 V 135 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube
Toshiba MOSFET POWER MOSFET TRANSISTOR DTMOS TO-247 PD=211W F=1MHZ 149재고 상태
₩12,261.6
₩8,205.6
₩6,598.8
₩5,865.6
₩5,194.8
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 80 mOhms 30 V 4 V 43 nC + 150 C 211 W Enhancement Tube
Toshiba MOSFET POWER MOSFET TRANSISTOR DTMOS TO-247 PD=150W F=1MHZ 60재고 상태
₩10,202.4
₩6,692.4
₩4,914
₩4,368
₩3,884.4
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 125 mOhms 30 V 4 V 28 nC + 150 C 150 W Enhancement Tube
Toshiba MOSFET N-Ch DTMOSIV 600V 240W 3000pF 30.8A 1,781재고 상태
5,000예상 2027-01-15
컷 테이프
₩11,154
₩7,456.8
₩5,990.4
₩5,335.2
₩4,726.8
릴
₩4,726.8
최소: 1
배수: 1
: 2,500
Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 30.8 A 87 mOhms 30 V 3 V 105 nC + 150 C 240 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET DTMOSIV 600V 18mOhm 100A 800W 15000pF 40재고 상태
₩45,037.2
₩32,838
₩29,889.6
최소: 1
배수: 1
Si Through Hole TO-3PL-3 N-Channel 1 Channel 600 V 100 A 15 mOhms 30 V 3.7 V 360 nC - 55 C + 150 C 797 W Enhancement DTMOSIV Tube
Toshiba MOSFET Power MOSFET N-Channel 187재고 상태
₩4,976.4
₩2,480.4
₩2,277.6
₩1,762.8
₩1,622.4
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9.7 A 350 mOhms 30 V 3 V 25 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch 600V 9.7A 30W DTMOSIV 700pF 20nC 195재고 상태
₩5,163.6
₩2,589.6
₩2,308.8
₩1,872
₩1,716
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9.7 A 327 mOhms 30 V 3.7 V 20 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch 800V 1150pF 19nC 9.5A 40W 82재고 상태
₩6,973.2
₩4,274.4
₩3,525.6
₩2,652
₩2,589.6
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 9.5 A 460 mOhms 20 V 3 V 19 nC - 55 C + 150 C 40 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch 9.7A 80W FET 600V 700pF 20nC 325재고 상태
컷 테이프
₩4,274.4
₩2,106
₩1,887.6
₩1,778.4
릴
₩1,778.4
최소: 1
배수: 1
: 2,000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 9.7 A 380 mOhms 30 V 3.7 V 20 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET POWER MOSFET TRANSISTOR TO-247 PD=190W F=1MHZ 40재고 상태
₩19,437.6
₩10,966.8
₩10,171.2
최소: 1
배수: 1
Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 24 A 110 mOhms 10 V 3 V 40 nC - 55 C + 150 C 190 W Enhancement Tube
Toshiba MOSFET MOSFET NChannel 0.33ohm DTMOS 174재고 상태
₩4,586.4
₩2,277.6
₩2,090.4
₩1,591.2
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 11.1 A 330 mOhms 30 V 3.5 V 25 nC - 55 C + 150 C 35 W Enhancement DTMOSIV Tube