결과: 27
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 기술 장착 스타일 패키지/케이스 트랜지스터 극성 채널 수 Vds - 드레인 소스 항복 전압 Id - 연속 드레인 전류 Rds On - 드레인 소스 저항 Vgs - 게이트 소스 전압 Vgs th - 게이트 소스 역치 전압 Qg - 게이트 전하 최저 작동온도 최고 작동온도 Pd - 전력 발산 채널 모드 상표명 포장

Infineon Technologies MOSFET HIGH POWER_NEW 2,346재고 상태
₩20,264.4
₩11,232
₩10,717.2
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 50 A 34 mOhms 20 V 3 V 107 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 333재고 상태
₩16,177.2
₩10,810.8
₩9,984
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 50 A 40 mOhms 20 V 3 V 107 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 6,560재고 상태
컷 테이프
₩5,194.8
₩2,745.6
₩2,215.2
₩1,903.2
₩1,872
₩1,872
최소: 1
배수: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 13 A 180 mOhms 20 V 3 V 24 nC - 55 C + 150 C 68 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 1,029재고 상태
컷 테이프
₩14,071.2
₩7,690.8
₩7,066.8
₩7,020
₩6,552
최소: 1
배수: 1
: 1,000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 35 A 60 mOhms 20 V 1.7 V 68 nC - 55 C + 150 C 162 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 808재고 상태
₩8,876.4
₩5,491.2
₩4,820.4
₩4,414.8
₩4,399.2
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 22 A 85 mOhms 20 V 3 V 42 nC - 55 C + 150 C 110 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 2,280재고 상태
컷 테이프
₩6,302.4
₩3,650.4
₩2,870.4
₩2,449.2
₩2,355.6
₩2,215.2
최소: 1
배수: 1
: 3,000
Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 13 A 185 mOhms 20 V 3 V 24 nC - 40 C + 150 C 77 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 850재고 상태
₩6,052.8
₩3,088.8
₩2,776.8
₩2,215.2
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 13 A 155 mOhms 20 V 3 V 24 nC - 55 C + 150 C 68 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 375재고 상태
₩10,280.4
₩5,444.4
₩4,992
₩4,321.2
최소: 1
배수: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 12 A 190 mOhms 20 V 3.5 V 42 nC - 55 C + 150 C 33 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 583재고 상태
₩8,564.4
₩4,461.6
₩4,071.6
₩3,416.4
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 19 A 120 mOhms 20 V 3 V 34 nC - 55 C + 150 C 92 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1,986재고 상태
₩8,517.6
₩4,446
₩4,056
₩3,400.8
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11 A 120 mOhms 20 V 3 V 34 nC - 55 C + 150 C 32 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1,271재고 상태
컷 테이프
₩10,311.6
₩5,475.6
₩5,007.6
₩4,648.8
₩4,383.6
최소: 1
배수: 1
: 1,000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 22 A 99 mOhms 20 V 3 V 42 nC - 55 C + 150 C 110 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 1,678재고 상태
컷 테이프
₩6,224.4
₩4,071.6
₩2,964
₩2,542.8
₩2,168.4
최소: 1
배수: 1
: 1,000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 13 A 180 mOhms 20 V 3.5 V 24 nC - 55 C + 150 C 68 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 840재고 상태
270예상 2026-10-08
컷 테이프
₩18,142.8
₩10,779.6
₩10,530
₩9,952.8
최소: 1
배수: 1
: 1,000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 50 A 40 mOhms 20 V 3 V 107 nC - 55 C + 150 C 227 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 2,712재고 상태
컷 테이프
₩10,405.2
₩5,522.4
₩4,976.4
₩4,508.4
₩4,446
최소: 1
배수: 1
: 3,000
Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 83 A 104 mOhms 20 V 3.5 V 42 nC - 40 C + 150 C 122 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 436재고 상태
₩14,008.8
₩7,644
₩7,035.6
₩6,598.8
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 35 A 60 mOhms 20 V 3 V 68 nC - 55 C + 150 C 162 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW 661재고 상태
720예상 2026-11-05
₩34,335.6
₩21,184.8
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 109 A 17 mOhms 20 V 3 V 240 nC - 55 C + 150 C 446 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW 684재고 상태
₩14,227.2
₩8,252.4
₩7,612.8
₩7,597.2
₩7,425.6
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 35 A 52 mOhms 20 V 3 V 68 nC - 55 C + 150 C 162 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW 221재고 상태
₩9,781.2
₩5,038.8
₩4,602
₩4,040.4
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 19 A 120 mOhms 20 V 3 V 34 nC - 55 C + 150 C 92 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 180재고 상태
₩14,118
₩7,722
₩7,098
₩6,676.8
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 16 A 115 mOhms 20 V 3.5 V 68 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 439재고 상태
₩6,052.8
₩3,057.6
₩2,917.2
₩2,246.4
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9 A 346 mOhms 20 V 3.5 V 24 nC - 55 C + 150 C 29 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW 53재고 상태
240예상 2026-10-15
₩11,138.4
₩5,803.2
₩5,335.2
₩4,867.2
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 22 A 85 mOhms 20 V 3 V 42 nC - 55 C + 150 C 110 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW 27재고 상태
240예상 2026-10-08
₩7,722
₩3,962.4
₩3,400.8
₩2,948.4
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 13 A 180 mOhms 20 V 3 V 24 nC - 55 C + 150 C 68 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 25재고 상태
₩12,495.6
₩6,614.4
₩6,084
₩5,304
최소: 1
배수: 1
Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 22 A 99 mOhms 20 V 3 V 42 nC - 55 C + 150 C 110 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 5재고 상태
컷 테이프
₩14,320.8
₩7,909.2
₩7,269.6
₩7,176
₩6,411.6
₩6,411.6
최소: 1
배수: 1
: 3,000
Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 29 A 65 mOhms 20 V 3 V 68 nC - 40 C + 150 C 180 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW
479예상 2026-10-15
₩35,193.6
₩22,058.4
₩22,011.6
최소: 1
배수: 1
Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 109 A 17 mOhms 20 V 3 V 240 nC - 55 C + 150 C 446 W Enhancement CoolMOS Tube