SiC MOSFETs – Mouser Korea, Republic of

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CoolSiC™ MOSFETs

Infineon CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC portfolio in TO- and SMD-housings comes in 650V, 1200V, and 1700V voltage classes, with on-resistance ratings from 27mΩ up to 1000mΩ. CoolSiC trench technology enables a flexible parameter set, which is used to implement application-specific features in respective product portfolios. These features include gate-source voltages, avalanche specification, short-circuit capability, or internal body diode rated for hard commutation.

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Part #

SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package

IMBG120R060M1HXTMA1
Infineon Technologies
1: ₩13,774.8
323In Stock
NRND

Mfr. Part #
IMBG120R060M1HXTMA1

Mouser Part #
726-IMBG120R060M1HXT

NRND

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package

Datasheet

323In Stock

Cut Tape

₩13,774.8

₩11,076

₩9,328.8

₩8,314.8

Reel

₩7,581.6

₩7,207.2

MouseReel Available

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

TO-263-7

N-Channel

1 Channel

1.2 kV

36 A

83 mOhms

- 7 V, + 20 V

5.1 V

34 nC

- 55 C

+ 175 C

181 W

Enhancement

CoolSiC

SiC MOSFETs SILICON CARBIDE MOSFET

IMW65R048M1HXKSA1
Infineon Technologies
1: ₩19,172.4
432In Stock
NRND

Mfr. Part #
IMW65R048M1HXKSA1

Mouser Part #
726-IMW65R048M1HXKSA

NRND

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Learn More

Datasheet

432In Stock

₩19,172.4

₩12,667.2

₩9,547.2

₩9,531.6

View

Min.: 1
Mult.: 1

Through Hole

TO-247-3

N-Channel

1 Channel

650 V

39 A

64 mOhms

- 5 V, + 23 V

5.7 V

33 nC

- 55 C

+ 150 C

125 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package

IMBG120R045M1HXTMA1
Infineon Technologies
1: ₩22,947.6
637In Stock
NRND

Mfr. Part #
IMBG120R045M1HXTMA1

Mouser Part #
726-IMBG120R045M1HXT

NRND

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package

Datasheet

637In Stock

Cut Tape

₩22,947.6

₩15,490.8

₩13,041.6

₩11,918.4

Reel

₩10,842

Quote

MouseReel Available

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

TO-263-7

N-Channel

1 Channel

1.2 kV

47 A

45 mOhms

- 7 V, + 20 V

5.1 V

46 nC

- 55 C

+ 175 C

227 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package

IMZ120R140M1HXKSA1
Infineon Technologies
1: ₩8,845.2
369In Stock
NRND

Mfr. Part #
IMZ120R140M1HXKSA1

Mouser Part #
726-IMZ120R140M1HXKS

NRND

Infineon Technologies

SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package

Datasheet

369In Stock

₩8,845.2

₩6,536.4

₩6,240

₩6,224.4

₩5,896.8

Min.: 1
Mult.: 1

Through Hole

TO-247-4

N-Channel

1 Channel

1.2 kV

19 A

182 mOhms

- 7 V, + 23 V

5.7 V

13 nC

- 55 C

+ 150 C

94 W

Enhancement

CoolSiC

SiC MOSFETs SILICON CARBIDE MOSFET

IMZA65R107M1HXKSA1
Infineon Technologies
1: ₩10,436.4
437In Stock
End of Life

Mfr. Part #
IMZA65R107M1HXKSA1

Mouser Part #
726-IMZA65R107M1HXKS

End of Life

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Datasheet

437In Stock

₩10,436.4

₩7,129.2

₩6,240

₩6,224.4

Quote

Min.: 1
Mult.: 1

Through Hole

TO-247-4

N-Channel

1 Channel

650 V

20 A

142 mOhms

- 5 V, + 23 V

5.7 V

15 nC

- 55 C

+ 150 C

75 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package

IMBG120R090M1HXTMA1
Infineon Technologies
1: ₩14,289.6
859In Stock
NRND

Mfr. Part #
IMBG120R090M1HXTMA1

Mouser Part #
726-IMBG120R090M1HXT

NRND

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package

Datasheet

859In Stock

Cut Tape

₩14,289.6

₩9,750

₩8,049.6

₩7,176

Reel

₩6,708

MouseReel Available

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

TO-263-7

N-Channel

1 Channel

1.2 kV

26 A

125 mOhms

- 7 V, + 20 V

5.1 V

23 nC

- 55 C

+ 175 C

136 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package

IMBG120R140M1HXTMA1
Infineon Technologies
1: ₩12,620.4
1,860In Stock
2,000Expected 8/7/2026
NRND

Mfr. Part #
IMBG120R140M1HXTMA1

Mouser Part #
726-IMBG120R140M1HXT

NRND

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package

Datasheet

1,860In Stock

2,000Expected 8/7/2026

Cut Tape

₩12,620.4

₩8,876.4

₩7,176

₩6,380.4

Reel

₩5,662.8

MouseReel Available

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

TO-263-7

N-Channel

1 Channel

1.2 kV

18 A

189 mOhms

- 7 V, + 20 V

5.1 V

13.4 nC

- 55 C

+ 175 C

107 W

Enhancement

CoolSiC

SiC MOSFETs SILICON CARBIDE MOSFET

IMW65R072M1HXKSA1
Infineon Technologies
1: ₩13,696.8
434In Stock
NRND

Mfr. Part #
IMW65R072M1HXKSA1

Mouser Part #
726-IMW65R072M1HXKSA

NRND

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Learn More

Datasheet

434In Stock

₩13,696.8

₩9,032.4

₩7,285.2

₩6,271.2

₩6,084

Min.: 1
Mult.: 1

Through Hole

TO-247-3

N-Channel

1 Channel

650 V

26 A

94 mOhms

- 5 V, + 23 V

5.7 V

22 nC

- 55 C

+ 150 C

96 W

Enhancement

CoolSiC

SiC MOSFETs SILICON CARBIDE MOSFET

IMZA65R027M1HXKSA1
Infineon Technologies
1: ₩26,067.6
172In Stock
1,200Expected 8/3/2026
NRND

Mfr. Part #
IMZA65R027M1HXKSA1

Mouser Part #
726-IMZA65R027M1HXKS

NRND

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Learn More

Datasheet

172In Stock

1,200Expected 8/3/2026

₩26,067.6

₩19,858.8

₩16,551.6

₩14,726.4

₩13,774.8

Min.: 1
Mult.: 1

Through Hole

TO-247-4

N-Channel

1 Channel

650 V

59 A

34 mOhms

- 5 V, + 23 V

5.7 V

63 nC

- 55 C

+ 150 C

189 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package

IMBF170R1K0M1XTMA1
Infineon Technologies
1: ₩9,157.2
10,930On Order

Mfr. Part #
IMBF170R1K0M1XTMA1

Mouser Part #
726-IMBF170R1K0M1XTM

Infineon Technologies

SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package

Learn More

Datasheet

10,930On Order

Cut Tape

₩9,157.2

₩5,772

₩4,321.2

₩3,681.6

Reel

₩3,432

₩3,291.6

MouseReel Available

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

TO-263-7

N-Channel

1 Channel

1.7 kV

5.2 A

1 Ohms

- 10 V, + 20 V

4.5 V

5 nC

- 55 C

+ 175 C

68 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package

IMBG120R030M1HXTMA1
Infineon Technologies
1: ₩28,906.8
686In Stock
1,000On Order
NRND

Mfr. Part #
IMBG120R030M1HXTMA1

Mouser Part #
726-IMBG120R030M1HXT

NRND

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package

Datasheet

686In Stock

1,000On Order

Cut Tape

₩28,906.8

₩22,011.6

₩18,345.6

₩16,348.8

Reel

₩15,272.4

MouseReel Available

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

TO-263-7

N-Channel

1 Channel

1.2 kV

56 A

41 mOhms

- 7 V, + 20 V

5.1 V

63 nC

- 55 C

+ 175 C

300 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package

IMBG120R220M1HXTMA1
Infineon Technologies
1: ₩10,920
512In Stock
2,000Expected 7/31/2026
NRND

Mfr. Part #
IMBG120R220M1HXTMA1

Mouser Part #
726-IMBG120R220M1HXT

NRND

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package

Datasheet

512In Stock

2,000Expected 7/31/2026

Cut Tape

₩10,920

₩6,957.6

₩5,553.6

₩4,773.6

Reel

₩4,336.8

₩4,321.2

MouseReel Available

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

TO-263-7

N-Channel

1 Channel

1.2 kV

13 A

294 mOhms

- 7 V, + 20 V

5.1 V

9.4 nC

- 55 C

+ 175 C

83 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package

IMBG120R350M1HXTMA1
Infineon Technologies
1: ₩10,452
1,206In Stock
1,000On Order
NRND

Mfr. Part #
IMBG120R350M1HXTMA1

Mouser Part #
726-IMBG120R350M1HXT

NRND

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package

Datasheet

1,206In Stock

1,000On Order

Cut Tape

₩10,452

₩6,848.4

₩5,038.8

₩4,477.2

Reel

₩3,978

MouseReel Available

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

TO-263-7

N-Channel

1 Channel

1.2 kV

4.7 A

468 mOhms

- 7 V, + 20 V

5.1 V

5.9 nC

- 55 C

+ 175 C

65 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package

IMW120R140M1HXKSA1
Infineon Technologies
1: ₩12,714
305In Stock
NRND

Mfr. Part #
IMW120R140M1HXKSA1

Mouser Part #
726-IMW120R140M1HXKS

NRND

Infineon Technologies

SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package

Datasheet

305In Stock

₩12,714

₩8,299.2

₩6,817.2

₩5,974.8

₩5,647.2

Min.: 1
Mult.: 1

Through Hole

TO-247-3

N-Channel

1 Channel

1.2 kV

19 A

182 mOhms

- 7 V, + 23 V

3.5 V

13 nC

- 55 C

+ 175 C

94 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package

IMW120R220M1HXKSA1
Infineon Technologies
1: ₩11,294.4
1,518In Stock
3,120On Order
NRND

Mfr. Part #
IMW120R220M1HXKSA1

Mouser Part #
726-IMW120R220M1HXKS

NRND

Infineon Technologies

SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package

Datasheet

1,518In Stock

3,120On Order

₩11,294.4

₩7,550.4

₩6,068.4

₩5,397.6

₩4,773.6

Min.: 1
Mult.: 1

Through Hole

TO-247-3

N-Channel

1 Channel

1.2 kV

13 A

289 mOhms

- 7 V, + 23 V

5.7 V

8.5 nC

- 55 C

+ 150 C

75 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package

IMW120R350M1HXKSA1
Infineon Technologies
1: ₩9,921.6
597In Stock
240Expected 5/20/2027
NRND

Mfr. Part #
IMW120R350M1HXKSA1

Mouser Part #
726-IMW120R350M1HXKS

NRND

Infineon Technologies

SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package

Datasheet

597In Stock

240Expected 5/20/2027

₩9,921.6

₩5,631.6

₩4,695.6

₩4,165.2

Min.: 1
Mult.: 1

Through Hole

TO-247-3

N-Channel

1 Channel

1.2 kV

4.7 A

455 mOhms

- 7 V, + 23 V

5.7 V

5.3 nC

- 55 C

+ 150 C

60 W

Enhancement

CoolSiC

SiC MOSFETs SILICON CARBIDE MOSFET

IMW65R027M1HXKSA1
Infineon Technologies
1: ₩25,303.2
1,224In Stock
NRND

Mfr. Part #
IMW65R027M1HXKSA1

Mouser Part #
726-IMW65R027M1HXKSA

NRND

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Learn More

Datasheet

1,224In Stock

₩25,303.2

₩19,281.6

₩16,068

₩14,305.2

₩13,540.8

Min.: 1
Mult.: 1

Through Hole

TO-247-3

N-Channel

1 Channel

650 V

47 A

34 mOhms

- 5 V, + 23 V

5.7 V

62 nC

- 55 C

+ 150 C

189 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC MOSFET discrete 1200 V in TO247-4 package

IMZ120R350M1HXKSA1
Infineon Technologies
1: ₩10,951.2
307In Stock
NRND

Mfr. Part #
IMZ120R350M1HXKSA1

Mouser Part #
726-IMZ120R350M1HXKS

NRND

Infineon Technologies

SiC MOSFETs CoolSiC MOSFET discrete 1200 V in TO247-4 package

Datasheet

307In Stock

₩10,951.2

₩7,332

₩5,881.2

₩5,226

₩4,633.2

Min.: 1
Mult.: 1

Through Hole

TO-247-4

N-Channel

1 Channel

1.2 kV

4.7 A

350 mOhms

- 7 V, + 23 V

5.7 V

5.3 nC

- 55 C

+ 150 C

60 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package

IMBF170R450M1XTMA1
Infineon Technologies
1: ₩13,228.8
46In Stock
11,000On Order

Mfr. Part #
IMBF170R450M1XTMA1

Mouser Part #
726-IMBF170R450M1XTM

Infineon Technologies

SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package

Learn More

Datasheet

46In Stock

11,000On Order

Cut Tape

₩13,228.8

₩8,923.2

₩6,474

₩5,553.6

Reel

₩4,898.4

MouseReel Available

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

TO-263-7

N-Channel

1 Channel

1.7 kV

9.8 A

450 mOhms

- 10 V, + 20 V

4.5 V

11 nC

- 55 C

+ 175 C

107 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package

IMBF170R650M1XTMA1
Infineon Technologies
1: ₩10,436.4
839In Stock

Mfr. Part #
IMBF170R650M1XTMA1

Mouser Part #
726-IMBF170R650M1XTM

Infineon Technologies

SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package

Learn More

Datasheet

839In Stock

Cut Tape

₩10,436.4

₩7,082.4

₩5,148

₩4,446

Reel

₩4,024.8

₩3,962.4

MouseReel Available

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

TO-263-7

N-Channel

1 Channel

1.7 kV

7.4 A

650 mOhms

- 10 V, + 20 V

4.5 V

8 nC

- 55 C

+ 175 C

88 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package

IMW120R030M1HXKSA1
Infineon Technologies
1: ₩31,153.2
480On Order
NRND

Mfr. Part #
IMW120R030M1HXKSA1

Mouser Part #
726-IMW120R030M1HXKS

NRND

Infineon Technologies

SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package

Datasheet

480On Order

₩31,153.2

₩19,858.8

₩17,097.6

₩15,974.4

Min.: 1
Mult.: 1

Through Hole

TO-247-3

N-Channel

1 Channel

1.2 kV

56 A

40 mOhms

- 7 V, + 23 V

5.7 V

63 nC

- 55 C

+ 150 C

227 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package

IMZ120R060M1HXKSA1
Infineon Technologies
1: ₩18,579.6
65In Stock
960Expected 9/17/2026
NRND

Mfr. Part #
IMZ120R060M1HXKSA1

Mouser Part #
726-IMZ120R060M1HXKS

NRND

Infineon Technologies

SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package

Datasheet

65In Stock

960Expected 9/17/2026

₩18,579.6

₩12,214.8

₩10,015.2

₩8,907.6

Min.: 1
Mult.: 1

Through Hole

TO-247-4

N-Channel

1 Channel

1.2 kV

36 A

78 mOhms

- 7 V, + 23 V

5.7 V

31 nC

- 55 C

+ 150 C

150 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package

IMZ120R220M1HXKSA1
Infineon Technologies
1: ₩12,682.8
43In Stock
1,920On Order
NRND

Mfr. Part #
IMZ120R220M1HXKSA1

Mouser Part #
726-IMZ120R220M1HXKS

NRND

Infineon Technologies

SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package

Datasheet

43In Stock

1,920On Order

₩12,682.8

₩8,221.2

₩6,318

₩5,522.4

₩5,350.8

Min.: 1
Mult.: 1

Through Hole

TO-247-4

N-Channel

1 Channel

1.2 kV

13 A

220 mOhms

- 7 V, + 23 V

5.7 V

8.5 nC

- 55 C

+ 150 C

75 W

Enhancement

CoolSiC

SiC MOSFETs SILICON CARBIDE MOSFET

IMZA65R048M1HXKSA1
Infineon Technologies
1: ₩17,362.8
40In Stock
240Expected 8/7/2026
NRND

Mfr. Part #
IMZA65R048M1HXKSA1

Mouser Part #
726-IMZA65R048M1HXKS

NRND

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Learn More

Datasheet

40In Stock

240Expected 8/7/2026

₩17,362.8

₩12,277.2

₩10,233.6

₩9,094.8

₩8,626.8

Min.: 1
Mult.: 1

Through Hole

TO-247-4

N-Channel

1 Channel

650 V

39 A

64 mOhms

- 5 V, + 23 V

5.7 V

33 nC

- 55 C

+ 150 C

125 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package

IMZ120R030M1HXKSA1
Infineon Technologies
1: ₩28,735.2
2,160On Order
NRND

Mfr. Part #
IMZ120R030M1HXKSA1

Mouser Part #
726-IMZ120R030M1HXKS

NRND

Infineon Technologies

SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package

Datasheet

2,160On Order

₩28,735.2

₩19,000.8

₩16,411.2

₩15,958.8

Min.: 1
Mult.: 1

Through Hole

TO-247-4

N-Channel

1 Channel

1.2 kV

56 A

40 mOhms

- 7 V, + 23 V

5.7 V

63 nC

- 55 C

+ 150 C

227 W

Enhancement

CoolSiC

CoolSiC™ MOSFETs

Customer Service Office

Company

Resources

Support

34 mOhms
40 mOhms
41 mOhms
45 mOhms
64 mOhms
78 mOhms
83 mOhms
94 mOhms
117 mOhms
125 mOhms
142 mOhms
182 mOhms
189 mOhms
220 mOhms
289 mOhms
294 mOhms
350 mOhms
450 mOhms
455 mOhms
468 mOhms