EF High Voltage Power MOSFETs

Vishay / Siliconix EF High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.

결과: 31
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 기술 장착 스타일 패키지/케이스 트랜지스터 극성 채널 수 Vds - 드레인 소스 항복 전압 Id - 연속 드레인 전류 Rds On - 드레인 소스 저항 Vgs - 게이트 소스 전압 Vgs th - 게이트 소스 역치 전압 Qg - 게이트 전하 최저 작동온도 최고 작동온도 Pd - 전력 발산 채널 모드 포장
Vishay / Siliconix MOSFET EF Series Pwr MOSFET w/Fast Body Diode 7,408재고 상태
₩7,201
₩3,734.4
₩3,396.2
₩2,818.4
최소: 1
배수: 1
Si SMD/SMT N-Channel 1 Channel 600 V 29 A 102 mOhms 30 V 5 V 35 nC - 55 C + 150 C 208 W Enhancement Bulk
Vishay / Siliconix MOSFET Nch 600V Vds 30V Vgs TO-220; w/diode 1,012재고 상태
₩6,665.5
₩3,438.4
₩3,114.3
₩2,564.7
₩2,550.7
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 19 A 182 mOhms 30 V 2 V 96 nC - 55 C + 150 C 33 W Enhancement Tube
Vishay / Siliconix MOSFET Nch 600V Vds 30V Vgs TO-263; w/diode 1,695재고 상태
₩7,285.6
₩4,777.2
₩3,565.3
₩2,987.5
최소: 1
배수: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 19 A 182 mOhms 30 V 2 V 96 nC - 55 C + 150 C 179 W Enhancement Tube
Vishay / Siliconix MOSFET EF Series Pwr MOSFET w/Fast Body Diode 461재고 상태
₩11,907.7
₩6,468.2
₩5,946.8
₩5,524.1
최소: 1
배수: 1
Si Through Hole N-Channel 1 Channel 600 V 48 A 52 mOhms 30 V 5 V 67 nC - 55 C + 150 C 278 W Enhancement Bulk
Vishay / Siliconix MOSFET TO247 800V 20A N-CH MOSFET 1,387재고 상태
₩8,610.2
₩4,537.6
₩4,143
₩3,988
₩3,579.4
최소: 1
배수: 1
Si Through Hole TO-247AC-3 N-Channel 1 Channel 800 V 20 A 170 mOhms 30 V 4 V 60 nC - 55 C + 150 C 208 W Enhancement Tube
Vishay / Siliconix MOSFET EF Series Pwr MOSFET w/Fast Body Diode 2,238재고 상태
₩7,877.4
₩4,114.9
₩3,748.5
₩3,537.1
₩3,184.8
최소: 1
배수: 1
Si Through Hole N-Channel 1 Channel 600 V 29 A 102 mOhms 30 V 5 V 35 nC - 55 C + 150 C 208 W Enhancement Tube
Vishay / Siliconix MOSFET Nch 600V Vds 30V Vgs TO-220AB; w/diode 1,555재고 상태
₩7,130.6
₩4,678.5
₩3,494.8
₩2,931.1
₩2,564.7
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 19 A 182 mOhms 30 V 2 V 96 nC - 55 C + 150 C 179 W Enhancement Tube
Vishay / Siliconix MOSFET TO220 600V 8.4A N-CH MOSFET 1,516재고 상태
₩6,045.5
₩3,833
₩2,860.7
₩2,452
최소: 1
배수: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 8.4 A 193 mOhms 30 V 5 V 32 nC - 55 C + 150 C 156 W Enhancement Tube
Vishay Semiconductors MOSFET 650V Vds 30V Vgs TO-247AD 409재고 상태
₩22,209
₩12,823.7
₩12,471.4
최소: 1
배수: 1
Si Tube
Vishay / Siliconix MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8 2,996재고 상태
컷 테이프
₩8,427
₩4,424.9
₩4,044.4
₩3,663.9
₩3,480.7
릴
₩3,480.7
최소: 1
배수: 1
: 3,000
Si SMD/SMT PowerPAK-8x8-4 N-Channel 1 Channel 600 V 16 A 220 mOhms 30 V 4 V 41 nC - 55 C + 150 C 147 W Enhancement Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET 650V Vds 30V Vgs TO-220AB 925재고 상태
₩8,892.1
₩5,834.1
₩4,298.1
₩3,818.9
₩3,382.1
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 21 A 180 mOhms 30 V 4 V 71 nC - 55 C + 150 C 208 W Enhancement Tube

Vishay / Siliconix MOSFET 650V Vds 30V Vgs TO-247AC 289재고 상태
₩23,265.9
₩17,727.7
₩14,768.4
₩13,232.4
최소: 1
배수: 1
Si Through Hole TO-247AC-3 Tube
Vishay / Siliconix MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8 2,927재고 상태
컷 테이프
₩8,427
₩5,524.1
₩4,072.6
₩3,621.6
₩3,241.2
릴
₩3,241.2
최소: 1
배수: 1
: 3,000
Si SMD/SMT PowerPAK-8x8-4 N-Channel 1 Channel 650 V 11 A 332 mOhms 30 V 4 V 35 nC - 55 C + 150 C 130 W Enhancement Reel, Cut Tape, MouseReel

Vishay / Siliconix MOSFET 650V Vds 30V Vgs TO-247AC 475재고 상태
₩16,191.7
₩10,653.6
₩9,145.7
₩8,257.9
₩8,060.6
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 46 A 63 mOhms 30 V 4 V 185 nC - 55 C + 150 C 417 W Enhancement Tube
Vishay / Siliconix MOSFET 650V Vds 30V Vgs D2PAK (TO-263) 835재고 상태
₩10,498.5
₩6,891
₩5,538.2
₩5,030.8
₩4,424.9
최소: 1
배수: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 24 A 156 mOhms 30 V 2 V 122 nC - 55 C + 150 C 250 W Enhancement Tube
Vishay / Siliconix MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8 2,873재고 상태
컷 테이프
₩19,038.3
₩17,544.5
₩13,302.8
₩11,175
₩8,863.9
릴
₩6,721.9
최소: 1
배수: 1
: 3,000
Si SMD/SMT PowerPAK-8x8-4 N-Channel 1 Channel 650 V 23 A 130 mOhms 30 V 4 V 77 nC - 55 C + 150 C 202 W Enhancement Reel, Cut Tape, MouseReel

Vishay / Siliconix MOSFET 650V Vds 30V Vgs TO-247AC 440재고 상태
₩10,724
₩7,172.8
₩5,777.7
₩4,875.8
최소: 1
배수: 1
Si Through Hole TO-247AC-3 Tube
Vishay / Siliconix MOSFET TO263 600V 8.4A N-CH MOSFET 953재고 상태
₩6,045.5
₩3,213
₩2,917
₩2,395.6
최소: 1
배수: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 8.4 A 168 mOhms 30 V 5 V 32 nC - 55 C + 150 C 156 W Enhancement Tube
Vishay / Siliconix MOSFET EF Series Pwr MOSFET w/Fast Body Diode 924재고 상태
₩11,245.4
₩6,073.7
₩5,693.2
₩5,115.4
최소: 1
배수: 1
Si Through Hole N-Channel 1 Channel 600 V 48 A 52 mOhms 30 V 5 V 67 nC - 55 C + 150 C 278 W Enhancement Tube
Vishay / Siliconix MOSFET TO220 800V 20A N-CH MOSFET 1,620재고 상태
₩7,553.3
₩3,931.7
₩3,579.4
₩2,973.4
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 20 A 170 mOhms 30 V 4 V 60 nC - 55 C + 150 C 208 W Enhancement Tube
Vishay / Siliconix MOSFET TO247 600V 8.4A N-CH MOSFET 332재고 상태
₩6,707.8
₩3,452.5
₩2,578.8
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 8.4 A 168 mOhms 30 V 5 V 32 nC - 55 C + 150 C 156 W Enhancement Tube
Vishay / Siliconix MOSFET 650V Vds; 30V Vgs TO-247AC 59재고 상태
₩27,014.4
₩20,588.4
₩14,289.3
최소: 1
배수: 1
Si Through Hole TO-247AC-3 N-Channel 1 Channel 600 V 80 A 32 mOhms 30 V 2 V 400 nC - 55 C + 150 C 520 W Enhancement Tube
Vishay / Siliconix MOSFET Nch 600V Vds 30V Vgs TO-247AC; w/diode 500구매 가능한 재고품
₩4,058.5
₩3,692.1
₩3,128.4
최소: 50
배수: 50
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 19 A 182 mOhms 30 V 2 V 96 nC - 55 C + 150 C 179 W Enhancement Tube
Vishay / Siliconix MOSFET N-CHANNEL 600V
5,000구매 가능한 재고품
₩2,818.4
₩2,339.3
₩2,156.1
최소: 100
배수: 100
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 21 A 176 mOhms 30 V 4 V 84 nC - 55 C + 150 C 227 W Enhancement Bulk
Vishay / Siliconix MOSFET 650V Vds 30V Vgs TO-220 FULLPAK 비재고 리드 타임 30 주
₩4,255.8
최소: 1,000
배수: 1,000
Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 24 A 156 mOhms 30 V 4 V 81 nC - 55 C + 150 C 39 W Enhancement Tube