SiC MOSFETs – Mouser Korea, Republic of

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650V CoolSiC™ M1 Trench Power MOSFETs

Infineon Technologies 650V CoolSiC™ M1 Trench Power MOSFETs combine the strong physical characteristics of Silicon Carbide with unique features that increase the device's performance, robustness, and ease of use. The CoolSiC M1 MOSFETs are built on a state-of-the-art trench semiconductor process optimized to deliver the lowest application losses and the highest reliability in operation. Suitable for high temperatures and harsh operations, these devices enable the simplified and cost-effective deployment of the highest system efficiency.

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Part #

SiC MOSFETs SILICON CARBIDE MOSFET

IMW65R048M1HXKSA1
Infineon Technologies
1: ₩19,172.4
432In Stock
NRND

Mfr. Part #
IMW65R048M1HXKSA1

Mouser Part #
726-IMW65R048M1HXKSA

NRND

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Learn More

Datasheet

432In Stock

₩19,172.4

₩12,667.2

₩9,547.2

₩9,531.6

View

Min.: 1
Mult.: 1

Through Hole

TO-247-3

N-Channel

1 Channel

650 V

39 A

64 mOhms

- 5 V, + 23 V

5.7 V

33 nC

- 55 C

+ 150 C

125 W

Enhancement

CoolSiC

SiC MOSFETs SILICON CARBIDE MOSFET

IMBG65R022M1HXTMA1
Infineon Technologies
1: ₩28,641.6
653In Stock
NRND

Mfr. Part #
IMBG65R022M1HXTMA1

Mouser Part #
726-IMBG65R022M1HXTM

NRND

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Learn More

Datasheet

653In Stock

Cut Tape

₩28,641.6

₩19,796.4

₩17,362.8

Reel

₩15,397.2

MouseReel Available

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

N-Channel

1 Channel

650 V

64 A

30 mOhms

- 5 V, + 23 V

5.7 V

67 nC

- 55 C

+ 175 C

300 W

Enhancement

CoolSiC

SiC MOSFETs SILICON CARBIDE MOSFET

IMZA65R107M1HXKSA1
Infineon Technologies
1: ₩10,436.4
437In Stock
End of Life

Mfr. Part #
IMZA65R107M1HXKSA1

Mouser Part #
726-IMZA65R107M1HXKS

End of Life

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Datasheet

437In Stock

₩10,436.4

₩7,129.2

₩6,240

₩6,224.4

Quote

Min.: 1
Mult.: 1

Through Hole

TO-247-4

N-Channel

1 Channel

650 V

20 A

142 mOhms

- 5 V, + 23 V

5.7 V

15 nC

- 55 C

+ 150 C

75 W

Enhancement

CoolSiC

SiC MOSFETs SILICON CARBIDE MOSFET

IMBG65R107M1HXTMA1
Infineon Technologies
1: ₩11,762.4
753In Stock
NRND

Mfr. Part #
IMBG65R107M1HXTMA1

Mouser Part #
726-IMBG65R107M1HXTM

NRND

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Learn More

Datasheet

753In Stock

Cut Tape

₩11,762.4

₩6,801.6

₩5,959.2

₩5,678.4

Reel

₩4,820.4

MouseReel Available

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

N-Channel

1 Channel

650 V

24 A

141 mOhms

- 5 V, + 23 V

5.7 V

35 nC

- 55 C

+ 175 C

110 W

Enhancement

CoolSiC

SiC MOSFETs SILICON CARBIDE MOSFET

IMBG65R048M1HXTMA1
Infineon Technologies
1: ₩15,178.8
1,019In Stock
NRND

Mfr. Part #
IMBG65R048M1HXTMA1

Mouser Part #
726-IMBG65R048M1HXTM

NRND

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Learn More

Datasheet

1,019In Stock

Cut Tape

₩15,178.8

₩8,970

₩8,408.4

Reel

₩7,129.2

MouseReel Available

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

N-Channel

1 Channel

650 V

45 A

64 mOhms

- 5 V, + 23 V

5.7 V

33 nC

- 55 C

+ 175 C

183 W

Enhancement

CoolSiC

SiC MOSFETs SILICON CARBIDE MOSFET

IMBG65R072M1HXTMA1
Infineon Technologies
1: ₩11,949.6
861In Stock
NRND

Mfr. Part #
IMBG65R072M1HXTMA1

Mouser Part #
726-IMBG65R072M1HXTM

NRND

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Learn More

Datasheet

861In Stock

Cut Tape

₩11,949.6

₩7,488

₩6,770.4

Reel

₩5,740.8

MouseReel Available

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

N-Channel

1 Channel

650 V

33 A

94 mOhms

- 5 V, + 23 V

5.7 V

22 nC

- 55 C

+ 175 C

140 W

Enhancement

CoolSiC

SiC MOSFETs SILICON CARBIDE MOSFET

IMW65R072M1HXKSA1
Infineon Technologies
1: ₩13,696.8
434In Stock
NRND

Mfr. Part #
IMW65R072M1HXKSA1

Mouser Part #
726-IMW65R072M1HXKSA

NRND

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Learn More

Datasheet

434In Stock

₩13,696.8

₩9,032.4

₩7,285.2

₩6,271.2

₩6,084

Min.: 1
Mult.: 1

Through Hole

TO-247-3

N-Channel

1 Channel

650 V

26 A

94 mOhms

- 5 V, + 23 V

5.7 V

22 nC

- 55 C

+ 150 C

96 W

Enhancement

CoolSiC

SiC MOSFETs SILICON CARBIDE MOSFET

IMZA65R027M1HXKSA1
Infineon Technologies
1: ₩26,067.6
289In Stock
1,200Expected 8/3/2026
NRND

Mfr. Part #
IMZA65R027M1HXKSA1

Mouser Part #
726-IMZA65R027M1HXKS

NRND

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Learn More

Datasheet

289In Stock

1,200Expected 8/3/2026

₩26,067.6

₩19,858.8

₩16,551.6

₩14,726.4

₩13,774.8

Min.: 1
Mult.: 1

Through Hole

TO-247-4

N-Channel

1 Channel

650 V

59 A

34 mOhms

- 5 V, + 23 V

5.7 V

63 nC

- 55 C

+ 150 C

189 W

Enhancement

CoolSiC

SiC MOSFETs SILICON CARBIDE MOSFET

IMZA65R039M1HXKSA1
Infineon Technologies
1: ₩18,751.2
335In Stock
NRND

Mfr. Part #
IMZA65R039M1HXKSA1

Mouser Part #
726-IMZA65R039M1HXKS

NRND

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Learn More

Datasheet

335In Stock

₩18,751.2

₩13,556.4

₩11,294.4

₩10,062

₩9,531.6

Min.: 1
Mult.: 1

Through Hole

TO-247-4

N-Channel

1 Channel

650 V

50 A

50 mOhms

- 5 V, + 23 V

5.7 V

41 nC

- 55 C

+ 175 C

176 W

Enhancement

SiC MOSFETs SILICON CARBIDE MOSFET

IMBG65R260M1HXTMA1
Infineon Technologies
1: ₩8,673.6
671In Stock
NRND

Mfr. Part #
IMBG65R260M1HXTMA1

Mouser Part #
726-IMBG65R260M1HXTM

NRND

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Learn More

Datasheet

671In Stock

Cut Tape

₩8,673.6

₩5,678.4

₩4,243.2

₩3,634.8

Reel

₩3,104.4

MouseReel Available

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

N-Channel

1 Channel

650 V

6 A

346 mOhms

- 5 V, + 23 V

5.7 V

22 nC

- 55 C

+ 175 C

65 W

Enhancement

CoolSiC

SiC MOSFETs SILICON CARBIDE MOSFET

IMW65R027M1HXKSA1
Infineon Technologies
1: ₩25,303.2
1,224In Stock
NRND

Mfr. Part #
IMW65R027M1HXKSA1

Mouser Part #
726-IMW65R027M1HXKSA

NRND

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Learn More

Datasheet

1,224In Stock

₩25,303.2

₩19,281.6

₩16,068

₩14,305.2

₩13,540.8

Min.: 1
Mult.: 1

Through Hole

TO-247-3

N-Channel

1 Channel

650 V

47 A

34 mOhms

- 5 V, + 23 V

5.7 V

62 nC

- 55 C

+ 150 C

189 W

Enhancement

CoolSiC

SiC MOSFETs SILICON CARBIDE MOSFET

IMZA65R057M1HXKSA1
Infineon Technologies
1: ₩16,021.2
132In Stock
NRND

Mfr. Part #
IMZA65R057M1HXKSA1

Mouser Part #
726-IMZA65R057M1HXKS

NRND

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Learn More

Datasheet

132In Stock

₩16,021.2

₩11,528.4

₩9,999.6

₩8,970

View

Min.: 1
Mult.: 1

Through Hole

TO-247-4

N-Channel

1 Channel

650 V

35 A

74 mOhms

- 5 V, + 23 V

5.7 V

28 nC

- 55 C

+ 175 C

133 W

Enhancement

SiC MOSFETs SILICON CARBIDE MOSFET

IMW65R057M1HXKSA1
Infineon Technologies
1: ₩14,367.6
55In Stock
NRND

Mfr. Part #
IMW65R057M1HXKSA1

Mouser Part #
726-IMW65R057M1HXKSA

NRND

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Learn More

Datasheet

55In Stock

₩14,367.6

₩9,453.6

₩7,332

₩6,910.8

₩6,630

Min.: 1
Mult.: 1

Through Hole

TO-247-3

N-Channel

1 Channel

650 V

35 A

74 mOhms

- 5 V, + 23 V

5.7 V

28 nC

- 55 C

+ 175 C

133 W

Enhancement

SiC MOSFETs SILICON CARBIDE MOSFET

IMW65R083M1HXKSA1
Infineon Technologies
1: ₩12,526.8
312In Stock
NRND

Mfr. Part #
IMW65R083M1HXKSA1

Mouser Part #
726-IMW65R083M1HXKSA

NRND

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Learn More

Datasheet

312In Stock

₩12,526.8

₩8,190

₩7,534.8

₩5,616

₩5,584.8

Min.: 1
Mult.: 1

Through Hole

TO-247-3

N-Channel

1 Channel

650 V

24 A

111 mOhms

- 5 V, + 23 V

5.7 V

19 nC

- 55 C

+ 175 C

104 W

Enhancement

SiC MOSFETs SILICON CARBIDE MOSFET

IMZA65R048M1HXKSA1
Infineon Technologies
1: ₩17,362.8
42In Stock
240Expected 8/7/2026
NRND

Mfr. Part #
IMZA65R048M1HXKSA1

Mouser Part #
726-IMZA65R048M1HXKS

NRND

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Learn More

Datasheet

42In Stock

240Expected 8/7/2026

₩17,362.8

₩12,277.2

₩10,233.6

₩9,094.8

₩8,626.8

Min.: 1
Mult.: 1

Through Hole

TO-247-4

N-Channel

1 Channel

650 V

39 A

64 mOhms

- 5 V, + 23 V

5.7 V

33 nC

- 55 C

+ 150 C

125 W

Enhancement

CoolSiC

SiC MOSFETs SILICON CARBIDE MOSFET

IMBG65R057M1HXTMA1
Infineon Technologies
1: ₩14,102.4
1,995Expected 9/3/2026
NRND

Mfr. Part #
IMBG65R057M1HXTMA1

Mouser Part #
726-IMBG65R057M1HXTM

NRND

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Learn More

Datasheet

1,995Expected 9/3/2026

Cut Tape

₩14,102.4

₩9,188.4

₩7,831.2

₩7,425.6

Reel

₩7,020

MouseReel Available

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

N-Channel

1 Channel

650 V

39 A

74 mOhms

- 5 V, + 23 V

5.7 V

28 nC

- 55 C

+ 175 C

161 W

Enhancement

CoolSiC

SiC MOSFETs SILICON CARBIDE MOSFET

IMBG65R163M1HXTMA1
Infineon Technologies
1: ₩9,828
1,000Expected 9/17/2026
NRND

Mfr. Part #
IMBG65R163M1HXTMA1

Mouser Part #
726-IMBG65R163M1HXTM

NRND

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Learn More

Datasheet

1,000Expected 9/17/2026

Cut Tape

₩9,828

₩6,442.8

₩4,461.6

₩4,056

Reel

₩3,775.2

MouseReel Available

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

N-Channel

1 Channel

650 V

17 A

217 mOhms

- 5 V, + 23 V

5.7 V

27 nC

- 55 C

+ 175 C

85 W

Enhancement

CoolSiC

SiC MOSFETs SILICON CARBIDE MOSFET

IMW65R030M1HXKSA1
Infineon Technologies
1: ₩24,055.2
480Expected 7/29/2026
NRND

Mfr. Part #
IMW65R030M1HXKSA1

Mouser Part #
726-IMW65R030M1HXKSA

NRND

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Learn More

Datasheet

480Expected 7/29/2026

₩24,055.2

₩17,097.6

₩15,069.6

₩13,603.2

View

Min.: 1
Mult.: 1

Through Hole

TO-247-3

N-Channel

1 Channel

650 V

58 A

42 mOhms

- 5 V, + 23 V

5.7 V

48 nC

- 55 C

+ 175 C

197 W

Enhancement

SiC MOSFETs SILICON CARBIDE MOSFET

IMW65R039M1HXKSA1
Infineon Technologies
1: ₩18,376.8
2,160Expected 8/7/2026
NRND

Mfr. Part #
IMW65R039M1HXKSA1

Mouser Part #
726-IMW65R039M1HXKSA

NRND

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Learn More

Datasheet

2,160Expected 8/7/2026

₩18,376.8

₩13,291.2

₩11,076

₩9,859.2

₩9,344.4

Min.: 1
Mult.: 1

Through Hole

TO-247-3

N-Channel

1 Channel

650 V

46 A

50 mOhms

- 5 V, + 23 V

5.7 V

41 nC

- 55 C

+ 175 C

176 W

Enhancement

SiC MOSFETs SILICON CARBIDE MOSFET

IMW65R107M1HXKSA1
Infineon Technologies
1: ₩12,292.8
473On Order
NRND

Mfr. Part #
IMW65R107M1HXKSA1

Mouser Part #
726-IMW65R107M1HXKSA

NRND

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Learn More

Datasheet

473On Order

₩12,292.8

₩8,221.2

₩6,614.4

₩5,257.2

Min.: 1
Mult.: 1

Through Hole

TO-247-3

N-Channel

1 Channel

650 V

20 A

142 mOhms

- 5 V, + 23 V

5.7 V

15 nC

- 55 C

+ 150 C

75 W

Enhancement

CoolSiC

SiC MOSFETs SILICON CARBIDE MOSFET

IMZA65R030M1HXKSA1
Infineon Technologies
1: ₩17,550
235Expected 8/27/2026
NRND

Mfr. Part #
IMZA65R030M1HXKSA1

Mouser Part #
726-IMZA65R030M1HXKS

NRND

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Learn More

Datasheet

235Expected 8/27/2026

₩17,550

₩13,837.2

₩13,104

₩12,885.6

Min.: 1
Mult.: 1

Through Hole

TO-247-4

N-Channel

1 Channel

650 V

53 A

42 mOhms

- 5 V, + 23 V

5.7 V

48 nC

- 55 C

+ 175 C

197 W

Enhancement

SiC MOSFETs SILICON CARBIDE MOSFET

IMBG65R030M1HXTMA1
Infineon Technologies
1,000: ₩11,403.6
Non-Stocked Lead-Time 52 Weeks
NRND

Mfr. Part #
IMBG65R030M1HXTMA1

Mouser Part #
726-IMBG65R030M1HXTM

NRND

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Learn More

Datasheet

Non-Stocked Lead-Time 52 Weeks

Reel

₩11,403.6

Min.: 1,000
Mult.: 1,000

: 1,000

SMD/SMT

N-Channel

1 Channel

650 V

63 A

42 mOhms

- 5 V, + 23 V

5.7 V

49 nC

- 55 C

+ 175 C

234 W

Enhancement

CoolSiC

SiC MOSFETs SILICON CARBIDE MOSFET

IMBG65R039M1HXTMA1
Infineon Technologies
1,000: ₩9,016.8
Non-Stocked Lead-Time 52 Weeks
NRND

Mfr. Part #
IMBG65R039M1HXTMA1

Mouser Part #
726-IMBG65R039M1HXTM

NRND

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Learn More

Datasheet

Non-Stocked Lead-Time 52 Weeks

Reel

₩9,016.8

Min.: 1,000
Mult.: 1,000

: 1,000

SMD/SMT

N-Channel

1 Channel

650 V

54 A

51 mOhms

- 5 V, + 23 V

5.7 V

41 nC

- 55 C

+ 175 C

211 W

Enhancement

CoolSiC

SiC MOSFETs SILICON CARBIDE MOSFET

IMBG65R083M1HXTMA1
Infineon Technologies
1,000: ₩5,678.4
Non-Stocked Lead-Time 52 Weeks
NRND

Mfr. Part #
IMBG65R083M1HXTMA1

Mouser Part #
726-IMBG65R083M1HXTM

NRND

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Learn More

Datasheet

Non-Stocked Lead-Time 52 Weeks

Reel

₩5,678.4

Min.: 1,000
Mult.: 1,000

: 1,000

SMD/SMT

N-Channel

1 Channel

650 V

28 A

111 mOhms

- 5 V, + 23 V

5.7 V

44 nC

- 55 C

+ 175 C

126 W

Enhancement

CoolSiC

SiC MOSFETs SILICON CARBIDE MOSFET

IMZA65R072M1HXKSA1
Infineon Technologies
1: ₩14,804.4
Non-Stocked Lead-Time 52 Weeks
NRND

Mfr. Part #
IMZA65R072M1HXKSA1

Mouser Part #
726-IMZA65R072M1HXKS

NRND

Infineon Technologies

SiC MOSFETs SILICON CARBIDE MOSFET

Learn More

Datasheet

Non-Stocked Lead-Time 52 Weeks

₩14,804.4

₩10,420.8

₩7,644

₩6,708

Min.: 1
Mult.: 1

Through Hole

TO-247-4

N-Channel

1 Channel

650 V

28 A

94 mOhms

- 5 V, + 23 V

5.7 V

22 nC

- 55 C

+ 150 C

96 W

Enhancement

CoolSiC

650V CoolSiC™ M1 Trench Power MOSFETs

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