UJ4C/SC 750V Gen 4 SiC FETs

onsemi UJ4C/SC 750V Gen 4 SiC FETs are high-performance devices that deliver Figures of Merit that lower conduction losses and increase efficiency at higher speeds, improving overall cost-effectiveness. Available in 5.4mΩ to 60mΩ options, the Gen 4 series is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device. The standard gate-drive characteristics of the UJ4C/SC 750V FETs allow for "drop-in replacement" functionality. Designers can enhance system performance without changing gate drive voltage by replacing existing Si IGBTs, Si FETs, SiC FETs, or Si super-junction devices with the onsemi UJ4C/SC FETs.

Results: 29
Select Image Part # Mfr. Description Datasheet Availability Pricing (KRW) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package / Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename
onsemi SiC MOSFETs 750V/6MOSICFETG4TO247-4 600In Stock
₩85,722
₩61,167.6
Min.: 1
Mult.: 1
Max.: 600
Through Hole TO-247-4 1 Channel 750 V 120 A 5.9 mOhms - 20 V, + 20 V 6 V 164 nC - 55 C + 175 C 714 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/18MOSICFETG4TO247 642In Stock
₩21,793.2
₩12,511.2
₩12,402
Min.: 1
Mult.: 1
Max.: 600
Through Hole TO-247-3 1 Channel 750 V 81 A 23 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 385 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 750V/60MOSICFETG4TO247-4 562In Stock
₩20,560.8
₩11,419.2
₩10,920
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 750 V 28 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 750V/33MOSICFETG4TO263 486In Stock
Cut Tape
₩23,727.6
₩13,899.6
₩13,150.8
Reel
₩13,150.8
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 44 A 41 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 197 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/44MOSICFETG4TO263 648In Stock
Cut Tape
₩21,886.8
₩12,526.8
₩11,856
Reel
₩11,856
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 35.6 A 56 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 181 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/60MOSICFETG4TO263 1,266In Stock
Cut Tape
₩12,277.2
₩6,630
₩6,567.6
₩6,333.6
Reel
₩6,333.6
₩5,538
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 25.8 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 128 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/18MOSICFETG4TO263-7 278In Stock
Cut Tape
₩38,157.6
₩28,501.2
₩24,648
₩22,089.6
Reel
₩22,089.6
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 72 A 18 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 259 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/60MOSICFETG4TO247 1,258In Stock
₩23,868
₩14,398.8
₩12,261.6
₩11,278.8
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 750 V 28 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 750V/11MOSICFETG4TO263-7 287In Stock
Cut Tape
₩46,144.8
₩36,550.8
₩34,086
₩30,825.6
Reel
₩30,825.6
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7L 1 Channel 750 V 104 A 11 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 357 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/5MOSICFETG4TOLL 1,630In Stock
Cut Tape
₩79,622.4
₩64,272
₩58,827.6
Reel
₩58,827.6
Min.: 1
Mult.: 1
Max.: 2,000
: 2,000
SMD/SMT MO-229-8 1 Channel 750 V 120 A 5 mOhms - 20 V, + 20 V 6 V 164 nC - 55 C + 175 C 1.153 kW Enhancement SiC FET
onsemi SiC MOSFETs 750V/8MOSICFETG4TOLL 712In Stock
Cut Tape
₩52,852.8
₩38,610
₩36,862.8
₩36,550.8
Reel
₩36,550.8
Min.: 1
Mult.: 1
Max.: 2,000
: 2,000
SMD/SMT MO-229-8 1 Channel 750 V 106 A 8 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 600 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/18MOSICFETG4TOLL 2,497In Stock
Cut Tape
₩35,817.6
₩23,228.4
₩21,918
₩20,748
Reel
₩20,748
Min.: 1
Mult.: 1
: 2,000
SMD/SMT MO-229-8 1 Channel 750 V 53 A 18 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 349 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/33MOSICFETG4TOLL 2,815In Stock
Cut Tape
₩24,570
₩14,554.8
₩14,539.2
₩13,774.8
Reel
₩13,774.8
Min.: 1
Mult.: 1
: 2,000
SMD/SMT MO-229-8 1 Channel 750 V 44 A 33 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 205 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/44MOSICFETG4TOLL 2,525In Stock
Cut Tape
₩21,746.4
₩12,417.6
₩11,746.8
Reel
₩11,746.8
Min.: 1
Mult.: 1
: 2,000
SMD/SMT MO-229-8 1 Channel 750 V 35.6 A 44 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 181 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/60MOSICFETG4TOLL 3,269In Stock
Cut Tape
₩17,955.6
₩10,046.4
₩9,672
₩9,141.6
Reel
₩9,141.6
Min.: 1
Mult.: 1
: 2,000
SMD/SMT MO-229-8 1 Channel 750 V 27.8 A 58 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/23MOSICFETG4TOLL 1,266In Stock
Cut Tape
₩29,952
₩21,325.2
₩18,782.4
₩17,534.4
Reel
₩17,534.4
Min.: 1
Mult.: 1
: 2,000
SMD/SMT MO-229-8 1 Channel 750 V 64 A 23 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 278 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/44MOSICFETG4TO247 3,930In Stock
2,400Expected 10/19/2026
₩24,242.4
₩13,852.8
₩12,885.6
₩12,807.6
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 750 V 37.4 A 56 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 203 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 750V/23MOSICFETG4TO247 313In Stock
600Expected 12/18/2026
₩19,250.4
₩10,608
₩10,015.2
Min.: 1
Mult.: 1
Max.: 600
Through Hole TO-247-3 1 Channel 750 V 66 A 29 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 306 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 750V/23MOSICFETG4TO247 1,908In Stock
₩20,030.4
₩11,247.6
₩10,951.2
Min.: 1
Mult.: 1
Max.: 600
Through Hole TO-247-4 1 Channel 750 V 66 A 29 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 306 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 750V/33MOSICFETG4TO247 211In Stock
₩24,382.8
₩13,790.4
₩13,634.4
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 750 V 47 A 41 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 242 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 750V/33MOSICFETG4TO247 291In Stock
₩26,551.2
₩15,100.8
₩14,180.4
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 750 V 47 A 41 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 242 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 750V/44MOSICFETG4TO247 371In Stock
₩19,032
₩10,483.2
₩9,874.8
Min.: 1
Mult.: 1
Max.: 600
Through Hole TO-247-3 1 Channel 750 V 37.4 A 56 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 203 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 750V/9MOSICFETG4TO263-7 331In Stock
Cut Tape
₩52,260
₩38,064
₩36,036
Reel
₩36,036
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 106 A 9 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 375 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/11MOSICFETG4TO247-4 976In Stock
₩30,888
₩23,072.4
₩19,952.4
₩18,891.6
Min.: 1
Mult.: 1
Max.: 600
Through Hole TO-247-4 1 Channel 750 V 104 A 11 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 357 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/18MOSICFETG4TO247 10In Stock
600Expected 10/28/2027
₩36,535.2
₩22,604.4
Min.: 1
Mult.: 1
Max.: 600
Through Hole TO-247-4 1 Channel 750 V 81 A 23 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 385 W Enhancement AEC-Q101 SiC FET