SCT3x 3rd Generation SiC Trench MOSFETs

ROHM Semiconductor SCT3x series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This design results in significantly lower switching loss and faster switching speeds, improving operational efficiency while reducing power loss in a variety of equipment. ROHM Semiconductor SCT3x includes 650V and 1200V variants for broad applicability.

Results: 31
Select Image Part # Mfr. Description Datasheet Availability Pricing (KRW) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package / Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification
ROHM Semiconductor SiC MOSFETs N-Ch 1200V SiC 31A 80mOhm TrenchMOS 1,034In Stock
₩33,708.1
₩20,968.9
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 31 A 104 mOhms - 4 V, + 22 V 5.6 V 60 nC - 55 C + 175 C 165 W Enhancement
ROHM Semiconductor SiC MOSFETs 650V 70A 262W SIC 30mOhm TO-247N
366In Stock
₩65,696.9
₩57,114.9
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs Nch 1200V 95A SiC TO-247N 495In Stock
₩68,656.2
₩60,835.2
Min.: 1
Mult.: 1
Through Hole TO-247N-3 1 Channel 1.2 kV 95 A 28.6 mOhms - 4 V, + 22 V 5.6 V 178 nC - 55 C + 175 C 427 W Enhancement
ROHM Semiconductor SiC MOSFETs N-Ch 1200V SiC 72A 30mOhm TrenchMOS 683In Stock
₩109,678
₩97,164.3
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 72 A 39 mOhms - 4 V, + 22 V 5.6 V 131 nC - 55 C + 175 C 339 W Enhancement
ROHM Semiconductor SiC MOSFETs 1200V 55A 262W SIC 40mOhm TO-247N
450In Stock
₩69,656.8
₩60,356
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 55 A 52 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs 650V 118A 427W SIC 17mOhm TO-247N
351In Stock
₩169,399.9
₩162,353.9
Min.: 1
Mult.: 1
Through Hole TO-247N-3 1 Channel 650 V 118 A 22.1 mOhms - 4 V, + 22 V 5.6 V 172 nC - 55 C + 175 C 427 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs 1200V 72A 339W SIC 30mOhm TO-247N
341In Stock
₩92,373.1
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 72 A 39 mOhms - 4 V, + 22 V 5.6 V 131 nC - 55 C + 175 C 339 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs 1200V 95A 427W SIC 22mOhm TO-247N
199In Stock
₩176,305
₩171,837.8
Min.: 1
Mult.: 1
Through Hole TO-247N-3 1 Channel 1.2 kV 95 A 28.6 mOhms - 4 V, + 22 V 5.6 V 178 nC - 55 C + 175 C 427 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs 1200V 24A 134W SIC 105mOhm TO-247N
1,619In Stock
₩28,127.6
₩21,758
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 24 A 137 mOhms - 4 V, + 22 V 5.6 V 51 nC + 175 C 134 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs 650V 21A 103W SIC 120mOhm TO-247N
450In Stock
₩12,358.7
₩8,596.1
₩8,342.5
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 21 A 156 mOhms - 4 V, + 22 V 5.6 V 38 nC + 175 C 103 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs 650V 39A 165W SIC 60mOhm TO-247N
428In Stock
₩35,145.4
₩25,154.2
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 39 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 165 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs Nch 1200V 24A SiC TO-247N 169In Stock
₩24,520.1
₩21,913.1
₩21,011.2
₩20,856.2
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 24 A 137 mOhms - 4 V, + 22 V 5.6 V 51 nC + 175 C 134 W Enhancement
ROHM Semiconductor SiC MOSFETs 650V 30A 134W SIC 80mOhm TO-247N
366In Stock
₩27,465.3
₩19,432.9
₩19,249.7
Min.: 1
Mult.: 1
Through Hole TO-247N-3 1 Channel 650 V 30 A 104 mOhms - 4 V, + 22 V 5.6 V 48 nC + 175 C 134 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs 1200V 31A 165W SIC 80mOhm TO-247N
171In Stock
₩36,470.1
₩26,507.1
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 31 A 80 mOhms - 4 V, + 22 V 2.7 V 60 nC - 55 C + 175 C 165 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs TO247 1.2KV 55A N-CH SIC 61In Stock
₩75,843.1
₩58,679.1
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 55 A 40 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor SiC MOSFETs TO247 1.2KV 31A N-CH SIC 150In Stock
₩26,803
₩15,867.6
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 31 A 80 mOhms - 4 V, + 22 V 5.6 V 60 nC - 55 C + 175 C 165 W Enhancement
ROHM Semiconductor SiC MOSFETs 650V Nch SiC Trench MOSFET in 4pin Package - SCT3080AR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver 529In Stock
₩30,495.1
₩24,139.6
₩20,884.3
₩19,757
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 30 A 80 mOhms - 4 V, + 22 V 5.6 V 48 nC - 55 C + 175 C 134 W Enhancement
ROHM Semiconductor SiC MOSFETs TO247 650V 70A N-CH SIC 195In Stock
₩72,517.4
₩55,536.6
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 70 A 30 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor SiC MOSFETs TO247 650V 39A N-CH SIC 704In Stock
₩37,611.5
₩24,449.6
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 39 A 60 mOhms - 4 V, + 22 V 5.6 V 58 nC - 55 C + 175 C 165 W Enhancement
ROHM Semiconductor SiC MOSFETs 1200V Nch SiC Trench MOSFET in 4pin Package - SCT3105KR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver 87In Stock
₩26,267.5
₩20,151.6
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 24 A 105 mOhms - 4 V, + 22 V 5.6 V 51 nC - 55 C + 175 C 134 W Enhancement
ROHM Semiconductor SiC MOSFETs Transistor SiC MOSFET 1200V 160mO 3rd Gen TO-263-7LA 990In Stock
Cut Tape
₩13,937
₩7,680.1
₩7,158.7
Reel
₩6,764.2
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7LA 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 100 W Enhancement
ROHM Semiconductor SiC MOSFETs 1200V, 17A, 7-pin SMD, Trench-structure, (SiC) MOSFET 753In Stock
Cut Tape
₩13,627
₩7,496.9
₩6,947.4
Reel
₩6,566.9
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7LA 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 100 W Enhancement
ROHM Semiconductor SiC MOSFETs N-Ch 650V SiC 93A 22mOhm TrenchMOS 188In Stock
₩79,154.8
₩56,776.7
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 93 A 28.6 mOhms - 4 V, + 22 V 5.6 V 133 nC - 55 C + 175 C 339 W Enhancement
ROHM Semiconductor SiC MOSFETs N-Ch 650V SiC 70A 30mOhm TrenchMOS 84In Stock
₩47,771.9
₩30,931.9
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor SiC MOSFETs N-Ch 650V SiC 39A 60mOhm TrenchMOS 1,069In Stock
₩23,759.1
₩13,288.8
₩12,964.6
₩12,950.5
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 39 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 165 W Enhancement