EF High Voltage Power MOSFETs

Vishay / Siliconix EF High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.

결과: 31
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 기술 장착 스타일 패키지/케이스 트랜지스터 극성 채널 수 Vds - 드레인 소스 항복 전압 Id - 연속 드레인 전류 Rds On - 드레인 소스 저항 Vgs - 게이트 소스 전압 Vgs th - 게이트 소스 역치 전압 Qg - 게이트 전하 최저 작동온도 최고 작동온도 Pd - 전력 발산 채널 모드 포장
Vishay / Siliconix MOSFET EF Series Pwr MOSFET w/Fast Body Diode 7,408재고 상태
₩7,971.6
₩4,134
₩3,759.6
₩3,104.4
₩3,088.8
최소: 1
배수: 1
Si SMD/SMT N-Channel 1 Channel 600 V 29 A 102 mOhms 30 V 5 V 35 nC - 55 C + 150 C 208 W Enhancement Bulk
Vishay / Siliconix MOSFET TO220 600V 8.4A N-CH MOSFET 1,516재고 상태
₩6,692.4
₩4,243.2
₩3,166.8
₩2,714.4
최소: 1
배수: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 8.4 A 193 mOhms 30 V 5 V 32 nC - 55 C + 150 C 156 W Enhancement Tube
Vishay Semiconductors MOSFET 650V Vds 30V Vgs TO-247AD 409재고 상태
₩24,585.6
₩14,196
₩13,603.2
최소: 1
배수: 1
Si Tube
Vishay / Siliconix MOSFET Nch 600V Vds 30V Vgs TO-220; w/diode 1,012재고 상태
₩7,378.8
₩3,806.4
₩3,447.6
₩2,839.2
₩2,823.6
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 19 A 182 mOhms 30 V 2 V 96 nC - 55 C + 150 C 33 W Enhancement Tube
Vishay / Siliconix MOSFET Nch 600V Vds 30V Vgs TO-263; w/diode 1,695재고 상태
₩8,065.2
₩5,288.4
₩3,946.8
₩3,307.2
최소: 1
배수: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 19 A 182 mOhms 30 V 2 V 96 nC - 55 C + 150 C 179 W Enhancement Tube
Vishay / Siliconix MOSFET EF Series Pwr MOSFET w/Fast Body Diode 461재고 상태
₩13,182
₩7,160.4
₩6,583.2
₩5,538
최소: 1
배수: 1
Si Through Hole N-Channel 1 Channel 600 V 48 A 52 mOhms 30 V 5 V 67 nC - 55 C + 150 C 278 W Enhancement Bulk
Vishay / Siliconix MOSFET TO247 800V 20A N-CH MOSFET 1,387재고 상태
₩9,531.6
₩5,023.2
₩4,586.4
₩4,414.8
₩3,915.6
최소: 1
배수: 1
Si Through Hole TO-247AC-3 N-Channel 1 Channel 800 V 20 A 170 mOhms 30 V 4 V 60 nC - 55 C + 150 C 208 W Enhancement Tube
Vishay / Siliconix MOSFET EF Series Pwr MOSFET w/Fast Body Diode 2,238재고 상태
₩8,720.4
₩4,555.2
₩4,149.6
₩3,915.6
최소: 1
배수: 1
Si Through Hole N-Channel 1 Channel 600 V 29 A 102 mOhms 30 V 5 V 35 nC - 55 C + 150 C 208 W Enhancement Tube
Vishay / Siliconix MOSFET Nch 600V Vds 30V Vgs TO-220AB; w/diode 1,555재고 상태
₩7,893.6
₩5,179.2
₩3,868.8
₩3,244.8
₩2,808
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 19 A 182 mOhms 30 V 2 V 96 nC - 55 C + 150 C 179 W Enhancement Tube

Vishay / Siliconix MOSFET 650V Vds 30V Vgs TO-247AC 475재고 상태
₩17,924.4
₩11,793.6
₩10,124.4
₩9,126
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 46 A 63 mOhms 30 V 4 V 185 nC - 55 C + 150 C 417 W Enhancement Tube
Vishay / Siliconix MOSFET 650V Vds 30V Vgs D2PAK (TO-263) 835재고 상태
₩11,622
₩7,628.4
₩6,130.8
₩5,569.2
₩4,898.4
최소: 1
배수: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 24 A 156 mOhms 30 V 2 V 122 nC - 55 C + 150 C 250 W Enhancement Tube
Vishay / Siliconix MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8 2,873재고 상태
컷 테이프
₩18,345.6
₩16,707.6
₩12,168
₩9,874.8
릴
₩6,988.8
최소: 1
배수: 1
: 3,000
Si SMD/SMT PowerPAK-8x8-4 N-Channel 1 Channel 650 V 23 A 130 mOhms 30 V 4 V 77 nC - 55 C + 150 C 202 W Enhancement Reel, Cut Tape, MouseReel

Vishay / Siliconix MOSFET 650V Vds 30V Vgs TO-247AC 289재고 상태
₩25,755.6
₩19,624.8
₩16,348.8
₩14,648.4
최소: 1
배수: 1
Si Through Hole TO-247AC-3 Tube
Vishay / Siliconix MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8 2,927재고 상태
컷 테이프
₩9,328.8
₩6,115.2
₩4,508.4
₩4,009.2
릴
₩3,494.4
최소: 1
배수: 1
: 3,000
Si SMD/SMT PowerPAK-8x8-4 N-Channel 1 Channel 650 V 11 A 332 mOhms 30 V 4 V 35 nC - 55 C + 150 C 130 W Enhancement Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8 2,996재고 상태
컷 테이프
₩9,328.8
₩4,898.4
₩4,477.2
₩4,056
₩3,900
릴
₩3,307.2
최소: 1
배수: 1
: 3,000
Si SMD/SMT PowerPAK-8x8-4 N-Channel 1 Channel 600 V 16 A 220 mOhms 30 V 4 V 41 nC - 55 C + 150 C 147 W Enhancement Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET 650V Vds 30V Vgs TO-220AB 925재고 상태
₩9,843.6
₩6,458.4
₩4,758
₩4,227.6
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 21 A 180 mOhms 30 V 4 V 71 nC - 55 C + 150 C 208 W Enhancement Tube

Vishay / Siliconix MOSFET 650V Vds 30V Vgs TO-247AC 440재고 상태
₩11,871.6
₩7,940.4
₩6,396
₩5,397.6
최소: 1
배수: 1
Si Through Hole TO-247AC-3 Tube
Vishay / Siliconix MOSFET EF Series Pwr MOSFET w/Fast Body Diode 924재고 상태
₩12,448.8
₩6,723.6
₩6,302.4
₩5,662.8
최소: 1
배수: 1
Si Through Hole N-Channel 1 Channel 600 V 48 A 52 mOhms 30 V 5 V 67 nC - 55 C + 150 C 278 W Enhancement Tube
Vishay / Siliconix MOSFET TO220 800V 20A N-CH MOSFET 1,620재고 상태
₩8,361.6
₩4,352.4
₩3,962.4
₩3,322.8
최소: 1
배수: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 20 A 170 mOhms 30 V 4 V 60 nC - 55 C + 150 C 208 W Enhancement Tube
Vishay / Siliconix MOSFET TO247 600V 8.4A N-CH MOSFET 332재고 상태
₩7,425.6
₩3,822
₩2,854.8
최소: 1
배수: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 8.4 A 168 mOhms 30 V 5 V 32 nC - 55 C + 150 C 156 W Enhancement Tube
Vishay / Siliconix MOSFET 650V Vds; 30V Vgs TO-247AC 59재고 상태
₩27,612
₩16,130.4
₩16,036.8
최소: 1
배수: 1
Si Through Hole TO-247AC-3 N-Channel 1 Channel 600 V 80 A 32 mOhms 30 V 2 V 400 nC - 55 C + 150 C 520 W Enhancement Tube
Vishay / Siliconix MOSFET TO263 600V 8.4A N-CH MOSFET
953예상 2026-11-02
₩6,832.8
₩3,556.8
₩3,229.2
₩2,652
₩2,542.8
최소: 1
배수: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 8.4 A 168 mOhms 30 V 5 V 32 nC - 55 C + 150 C 156 W Enhancement Tube
Vishay / Siliconix MOSFET Nch 600V Vds 30V Vgs TO-247AC; w/diode 500구매 가능한 재고품
₩4,960.8
₩4,087.2
₩3,463.2
최소: 50
배수: 50
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 19 A 182 mOhms 30 V 2 V 96 nC - 55 C + 150 C 179 W Enhancement Tube
Vishay / Siliconix MOSFET N-CHANNEL 600V
5,000구매 가능한 재고품
₩3,120
₩2,589.6
₩2,386.8
최소: 100
배수: 100
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 21 A 176 mOhms 30 V 4 V 84 nC - 55 C + 150 C 227 W Enhancement Bulk
Vishay / Siliconix MOSFET 650V Vds 30V Vgs TO-220 FULLPAK 비재고 리드 타임 30 주
₩4,711.2
최소: 1,000
배수: 1,000
Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 24 A 156 mOhms 30 V 4 V 81 nC - 55 C + 150 C 39 W Enhancement Tube