|
|
SiC MOSFET 1200-V N-CHANNEL (SIC) MOSFET
- MXP120A080FW-GE3
- Vishay Semiconductors
-
1:
₩16,644
-
2,313재고 상태
-
신제품
|
Mouser 부품 번호
78-MXP120A080FW
신제품
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL (SIC) MOSFET
|
|
2,313재고 상태
|
|
|
₩16,644
|
|
|
₩13,548.8
|
|
|
₩13,140
|
|
|
₩11,169
|
|
|
₩10,950
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
29 A
|
100 mOhms
|
- 10 V, + 22 V
|
2.69 V
|
47.3 nC
|
- 55 C
|
+ 150 C
|
139 W
|
Enhancement
|
MaxSIC
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120A045SE-T1GE3
- Vishay Semiconductors
-
1:
₩16,498
-
800예상 2026-06-25
-
신제품
|
Mouser 부품 번호
78-MXP120A045S-T1GE3
신제품
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
800예상 2026-06-25
|
|
|
₩16,498
|
|
|
₩12,906.4
|
|
|
₩10,745.6
|
|
|
₩9,577.6
|
|
|
₩8,132.2
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
56 mOhms
|
- 10 V, 22 V
|
2.8 V
|
82 nC
|
- 55 C
|
+ 175 C
|
268 W
|
Enhancement
|
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120A045SL-GE3
- Vishay Semiconductors
-
1:
₩17,009
-
600예상 2026-06-18
-
신제품
|
Mouser 부품 번호
78-MXP120A045SL-GE3
신제품
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
600예상 2026-06-18
|
|
|
₩17,009
|
|
|
₩13,840.8
|
|
|
₩11,534
|
|
|
₩10,278.4
|
|
|
₩8,730.8
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247AD-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
51 A
|
56 mOhms
|
- 10 V, 22 V
|
2.8 V
|
83 nC
|
- 55 C
|
+ 175 C
|
254 W
|
Enhancement
|
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120A045SW-GE3
- Vishay Semiconductors
-
1:
₩16,863
-
600예상 2026-06-18
-
신제품
|
Mouser 부품 번호
78-MXP120A045SW-GE3
신제품
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
600예상 2026-06-18
|
|
|
₩16,863
|
|
|
₩13,724
|
|
|
₩11,431.8
|
|
|
₩10,190.8
|
|
|
₩8,643.2
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247AD-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
51 A
|
56 mOhms
|
- 10 V, 22 V
|
2.8 V
|
84 nC
|
- 55 C
|
+ 175 C
|
254 W
|
Enhancement
|
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120A063SE-T1GE3
- Vishay Semiconductors
-
1:
₩13,884.6
-
800예상 2026-11-20
-
신제품
|
Mouser 부품 번호
78-MXP120A063S-T1GE3
신제품
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
800예상 2026-11-20
|
|
|
₩13,884.6
|
|
|
₩10,526.6
|
|
|
₩8,760
|
|
|
₩7,811
|
|
|
₩6,964.2
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
41 A
|
79 mOhms
|
- 10 V, 22 V
|
2.9 V
|
58 nC
|
- 55 C
|
+ 175 C
|
221 W
|
Enhancement
|
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120A063SL-GE3
- Vishay Semiconductors
-
1:
₩14,643.8
-
600예상 2026-11-20
-
신제품
|
Mouser 부품 번호
78-MXP120A063SL-GE3
신제품
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
600예상 2026-11-20
|
|
|
₩14,643.8
|
|
|
₩11,461
|
|
|
₩9,548.4
|
|
|
₩8,511.8
|
|
|
₩7,577.4
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247AD-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
39 A
|
79 mOhms
|
- 10 V, 22 V
|
2.9 V
|
61 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120A080SE-T1GE3
- Vishay Semiconductors
-
1:
₩12,614.4
-
800예상 2026-11-20
-
신제품
|
Mouser 부품 번호
78-MXP120A080S-T1GE3
신제품
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
800예상 2026-11-20
|
|
|
₩12,614.4
|
|
|
₩9,168.8
|
|
|
₩7,635.8
|
|
|
₩6,803.6
|
|
|
₩6,073.6
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
32 A
|
100 mOhms
|
- 10 V, 22 V
|
2.9 V
|
47 nC
|
- 55 C
|
+ 175 C
|
185 W
|
Enhancement
|
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120A080SL-GE3
- Vishay Semiconductors
-
1:
₩13,607.2
-
600예상 2026-11-20
-
신제품
|
Mouser 부품 번호
78-MXP120A080SL-GE3
신제품
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
600예상 2026-11-20
|
|
|
₩13,607.2
|
|
|
₩10,117.8
|
|
|
₩8,424.2
|
|
|
₩7,504.4
|
|
|
₩6,686.8
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247AD-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
31 A
|
100 mOhms
|
- 10 V, 22 V
|
2.9 V
|
45 nC
|
- 55 C
|
+ 175 C
|
174 W
|
Enhancement
|
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXPQ120A045SE-1GE3
- Vishay Semiconductors
-
1:
₩16,644
-
800예상 2026-06-25
-
신제품
|
Mouser 부품 번호
78-MXPQ120A045S-1GE3
신제품
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
800예상 2026-06-25
|
|
|
₩16,644
|
|
|
₩13,548.8
|
|
|
₩11,285.8
|
|
|
₩10,059.4
|
|
|
₩8,541
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
56 mOhms
|
- 10 V, 22 V
|
2.8 V
|
82 nC
|
- 55 C
|
+ 175 C
|
268 W
|
Enhancement
|
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXPQ120A045SW-GE3
- Vishay Semiconductors
-
1:
₩17,695.2
-
600예상 2026-06-25
-
신제품
|
Mouser 부품 번호
78-MXPQ120A045SW-GE3
신제품
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
600예상 2026-06-25
|
|
|
₩17,695.2
|
|
|
₩14,410.2
|
|
|
₩12,001.2
|
|
|
₩10,701.8
|
|
|
₩9,081.2
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247AD-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
51 A
|
56 mOhms
|
- 10 V, 22 V
|
2.8 V
|
83 nC
|
- 55 C
|
+ 175 C
|
254 W
|
Enhancement
|
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXPQ120A063SL-GE3
- Vishay Semiconductors
-
1:
₩15,373.8
-
600예상 2026-09-17
-
신제품
|
Mouser 부품 번호
78-MXPQ120A063SL-GE3
신제품
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
600예상 2026-09-17
|
|
|
₩15,373.8
|
|
|
₩12,030.4
|
|
|
₩10,015.6
|
|
|
₩8,935.2
|
|
|
₩7,577.4
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247AD-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
39 A
|
79 mOhms
|
- 10 V, 22 V
|
2.9 V
|
61 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXPQ120A080SL-GE3
- Vishay Semiconductors
-
1:
₩14,016
-
600예상 2026-09-17
-
신제품
|
Mouser 부품 번호
78-MXPQ120A080SL-GE3
신제품
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
600예상 2026-09-17
|
|
|
₩14,016
|
|
|
₩10,628.8
|
|
|
₩8,847.6
|
|
|
₩7,884
|
|
|
₩7,022.6
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247AD-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
39 A
|
79 mOhms
|
- 10 V, 22 V
|
2.9 V
|
61 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120A045FE-T1GE3
- Vishay Semiconductors
-
1:
₩30,426.4
-
비재고 리드 타임 57 주
-
신제품
|
Mouser 부품 번호
78-MXP120A045FET1GE3
신제품
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
비재고 리드 타임 57 주
|
|
|
₩30,426.4
|
|
|
₩25,944.2
|
|
|
₩22,440.2
|
|
|
₩20,133.4
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
49 A
|
56 mOhms
|
- 10 V, 22 V
|
2.38 V
|
75.6 nC
|
- 55 C
|
+ 150 C
|
212 W
|
Enhancement
|
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120A045FL-GE3
- Vishay Semiconductors
-
1:
₩31,798.8
-
비재고 리드 타임 57 주
-
신제품
|
Mouser 부품 번호
78-MXP120A045FL
신제품
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
비재고 리드 타임 57 주
|
|
|
₩31,798.8
|
|
|
₩27,112.2
|
|
|
₩23,447.6
|
|
|
₩21,140.8
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
49 A
|
56 mOhms
|
- 10 V, + 22 V
|
2.38 V
|
75.6 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
MaxSIC
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120A045FW-GE3
- Vishay Semiconductors
-
1:
₩30,864.4
-
비재고 리드 타임 57 주
-
신제품
|
Mouser 부품 번호
78-MXP120A045FW
신제품
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
비재고 리드 타임 57 주
|
|
|
₩30,864.4
|
|
|
₩26,323.8
|
|
|
₩22,761.4
|
|
|
₩20,527.6
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
49 A
|
56 mOhms
|
- 10 V, + 22 V
|
2.38 V
|
75.6 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
MaxSIC
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120A080FE-T1GE3
- Vishay Semiconductors
-
1:
₩14,454
-
비재고 리드 타임 57 주
-
신제품
|
Mouser 부품 번호
78-MXP120A080FET1GE3
신제품
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
비재고 리드 타임 57 주
|
|
|
₩14,454
|
|
|
₩11,315
|
|
|
₩9,431.6
|
|
|
₩7,606.6
|
|
최소: 1
배수: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
100 mOhms
|
- 10 V, 22 V
|
2.69 V
|
47.3 nC
|
- 55 C
|
+ 150 C
|
140 W
|
Enhancement
|
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120A250FL-GE3
- Vishay Semiconductors
-
1:
₩12,410
-
비재고 리드 타임 57 주
-
신제품
|
Mouser 부품 번호
78-MXP120A250FL
신제품
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
비재고 리드 타임 57 주
|
|
|
₩12,410
|
|
|
₩9,037.4
|
|
|
₩7,533.6
|
|
|
₩6,175.8
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
10.5 A
|
313 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
20.3 nC
|
- 55 C
|
+ 150 C
|
56 W
|
Enhancement
|
MaxSIC
|
|
|
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
- MXP120A250FW-GE3
- Vishay Semiconductors
-
1:
₩10,658
-
재고 없음
-
신제품
|
Mouser 부품 번호
78-MXP120A250FW
신제품
|
Vishay Semiconductors
|
SiC MOSFET 1200-V N-CHANNEL SIC MOSFET
|
|
재고 없음
|
|
|
₩10,658
|
|
|
₩7,533.6
|
|
|
₩6,278
|
|
|
₩5,168.4
|
|
|
₩5,153.8
|
|
최소: 1
배수: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
10.5 A
|
313 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
20.3 nC
|
- 55 C
|
+ 150 C
|
56 W
|
Enhancement
|
MaxSIC
|
|
대한민국