TK100A10N1,S4X
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757-TK100A10N1S4X
TK100A10N1,S4X
제조업체:
설명:
MOSFET MOSFET NCh 3.1ohm VGS10V10uAVDS100V
MOSFET MOSFET NCh 3.1ohm VGS10V10uAVDS100V
데이터시트:
재고 상태: 141
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재고:
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141 즉시 배송 가능예기치 않은 오류가 발생했습니다. 나중에 다시 시도하십시오.
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공장 리드 타임:
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20 주 표시된 것보다 많은 수량에 대한 추정 공장 생산 시간입니다.
가격 (KRW)
| 수량 | 단가 |
합계
|
|---|---|---|
| ₩8,190.6 | ₩8,191 | |
| ₩4,321.6 | ₩43,216 | |
| ₩4,029.6 | ₩402,960 | |
| ₩3,270.4 | ₩1,635,200 | |
| ₩3,241.2 | ₩3,241,200 |
데이터시트
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
Models
Product Catalogs
Test/Quality Data
- KRHTS:
- 8541299000
- CNHTS:
- 8541290000
- CAHTS:
- 8541290000
- USHTS:
- 8541290065
- JPHTS:
- 8541290100
- TARIC:
- 8541290000
- MXHTS:
- 85412999
- ECCN:
- EAR99
