STMicroelectronics IGBT

결과: 205
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 기술 패키지/케이스 장착 스타일 구성 콜렉터- 최대 이미터 전압 VCEO 콜렉터-이미터 포화 전압 최대 게이트 이미터 전압 25 C의 지속적인 컬렉터 전류 Pd - 전력 발산 최저 작동온도 최고 작동온도 시리즈 자격 포장
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 25 A high speed 659재고 상태
최소: 1
배수: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGW25H120F2 Tube

STMicroelectronics IGBT Trench gate field-stop 600 V, 30 A high speed HB series IGBT 1,118재고 상태
최소: 1
배수: 1

Si TO-247-3 Through Hole Single 600 V 1.55 V - 20 V, 20 V 60 A 260 W - 55 C + 175 C STGW30H60DFB Tube
STMicroelectronics IGBT N-CHANNEL IGBT 2,838재고 상태
최소: 1
배수: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.75 V - 25 V, 25 V 60 A 220 W - 55 C + 150 C STGW30NC120HD Tube
STMicroelectronics IGBT 30A 600v IGBT 580재고 상태
최소: 1
배수: 1

Si TO-247-3 Through Hole Single 600 V 2.1 V - 20 V, 20 V 60 A 200 W - 55 C + 150 C STGW30NC60KD Tube
STMicroelectronics IGBT 600V 30A High Speed Trench Gate IGBT 1,166재고 상태
최소: 1
배수: 1

Si TO-247 Through Hole Single 600 V 2.35 V - 20 V, 20 V 60 A 258 W - 55 C + 175 C STGW30V60DF Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 40 A high speed 1,828재고 상태
최소: 1
배수: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGW40H120DF2 Tube
STMicroelectronics IGBT 600V 40A trench gate field-stop IGBT 1,402재고 상태
최소: 1
배수: 1

Si TO-247-3 Through Hole Single 650 V 1.8 V - 20 V, 20 V 80 A 283 W - 55 C + 175 C STGW40H65DFB Tube
STMicroelectronics IGBT 600V 40A High Speed Trench Gate IGBT 906재고 상태
최소: 1
배수: 1

Si TO-247 Through Hole Single 600 V 2.35 V - 20 V, 20 V 80 A 283 W - 55 C + 175 C STGW40V60DF Tube
STMicroelectronics IGBT 600V 60A High Speed Trench Gate IGBT 1,072재고 상태
최소: 1
배수: 1

Si TO-247 Through Hole Single 600 V 2.35 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C STGW60V60DF Tube

STMicroelectronics IGBT Trench gate field-stop IGBT M series, 650 V 75 A low loss 679재고 상태
최소: 1
배수: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 120 A 468 W - 55 C + 175 C STGW75M65DF2 Tube
STMicroelectronics IGBT Trench gte FieldStop IGBT 650V 80A 4,575재고 상태
최소: 1
배수: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 120 A 469 W - 55 C + 175 C STGW80H65DFB Tube
STMicroelectronics IGBT 19A 600V Very Fast IGBT Ultrafast Diode 946재고 상태
3,000주문 중
최소: 1
배수: 1

Si TO-247 Through Hole Single 600 V 1.8 V - 20 V, 20 V 52 A 208 W - 55 C + 150 C STGWA19NC60HD Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, M series 1200 V, 25 A low loss 1,218재고 상태
최소: 1
배수: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C M Tube

STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 40 A high speed 747재고 상태
최소: 1
배수: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGWA40H120DF2 Tube

STMicroelectronics IGBT Trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 long leads 692재고 상태
최소: 1
배수: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C HB2 Tube
STMicroelectronics IGBT Automotive-grade trench gate field-stop IGBT, M series 650 V, 120 A low loss in 547재고 상태
최소: 1
배수: 1

Si Max247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 160 A 625 W - 55 C + 175 C STGYA120M65DF2AG AEC-Q101 Tube
STMicroelectronics GWA40MS120F4AG
STMicroelectronics IGBT Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a 598재고 상태
최소: 1
배수: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.95 V 20 V 80 A 536 W - 55 C + 175 C Tube
STMicroelectronics IGBT N-channel MOSFET 1,433재고 상태
2,000예상 2027-01-18
최소: 1
배수: 1
: 1,000

Si D2PAK-3 SMD/SMT Single 600 V 2.2 V - 20 V, 20 V 20 A 65 W - 55 C + 150 C STGB10NC60KDT4 Reel, Cut Tape, MouseReel
STMicroelectronics IGBT PowerMESH&#34 IGBT 561재고 상태
2,000예상 2026-06-22
최소: 1
배수: 1
: 1,000

Si D2PAK-3 SMD/SMT Single 600 V 2.1 V - 20 V, 20 V 25 A 80 W - 55 C + 150 C STGB14NC60KDT4 Reel, Cut Tape, MouseReel
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 600 V, 15 A high speed 606재고 상태
최소: 1
배수: 1
: 1,000

Si D2PAK SMD/SMT Single 600 V 1.6 V - 20 V, 20 V 30 A 115 W - 55 C + 175 C STGB15H60DF Reel, Cut Tape, MouseReel
STMicroelectronics IGBT 20 A - 600 V - short circuit rugged IGBT 467재고 상태
최소: 1
배수: 1
: 1,000

Si D2PAK-3 SMD/SMT Single 600 V 2 V - 20 V, 20 V 35 A 125 W - 55 C + 150 C STGB19NC60KDT4 Reel, Cut Tape, MouseReel
STMicroelectronics IGBT Trench gate field-stop, 650 V, 20 A, M series low loss IGBT 318재고 상태
최소: 1
배수: 1
: 1,000

Si D2PAK-3 SMD/SMT Single 650 V 1.55 V - 20 V, 20 V 40 A 166 W - 55 C + 175 C STGB20M65DF2 Reel, Cut Tape, MouseReel
STMicroelectronics IGBT Trench gate field-stop 600 V, 30 A high speed HB series IGBT 79재고 상태
1,000예상 2026-05-04
최소: 1
배수: 1
: 1,000

Si D2PAK-3 SMD/SMT Single 600 V 1.55 V - 20 V, 20 V 60 A 260 W - 55 C + 175 C STGB30H60DFB Reel, Cut Tape, MouseReel
STMicroelectronics IGBT Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a D2PAK package 802재고 상태
최소: 1
배수: 1
: 1,000

Si SMD/SMT Single 650 V 1.65 V - 20 V, 20 V 50 A 167 W - 55 C + 175 C Reel, Cut Tape, MouseReel

STMicroelectronics IGBT Trench gate field-stop IGBT, V series 600 V, 30 A very high speed 344재고 상태
1,000예상 2026-04-02
최소: 1
배수: 1
: 1,000

Si D2PAK-3 SMD/SMT Single 600 V 1.85 V - 20 V, 20 V 60 A 258 W - 55 C + 175 C STGB30V60DF Reel, Cut Tape, MouseReel