Microchip IGBT

결과: 122
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 기술 패키지/케이스 장착 스타일 구성 콜렉터- 최대 이미터 전압 VCEO 콜렉터-이미터 포화 전압 최대 게이트 이미터 전압 25 C의 지속적인 컬렉터 전류 Pd - 전력 발산 최저 작동온도 최고 작동온도 포장

Microchip Technology IGBT IGBT PT MOS 7 Single 1200 V 35 A TO-247 107재고 상태
최소: 1
배수: 1

Si TO-247-3 Through Hole Single 1.2 kV 3.3 V - 20 V, 20 V 96 A 543 W - 55 C + 150 C Tube
Microchip Technology IGBT IGBT PT MOS 7 Single 1200 V 45 A SOT-227 10재고 상태
최소: 1
배수: 1

Si SOT-227-4 Screw Mount Single 1.2 kV 3.3 V - 20 V, 20 V 75 A 329 W - 55 C + 150 C Tube
Microchip Technology IGBT IGBT Fieldstop Low Frequency Combi 600 V 75 A TO-268 60재고 상태
최소: 1
배수: 1

Si D3PAK-3 SMD/SMT Single 600 V 1.45 V - 30 V, 30 V 155 A 536 W - 55 C + 175 C Tube
Microchip Technology IGBT IGBT MOS 8 1200 V 85 A SOT-227 14재고 상태
최소: 1
배수: 1

Si SOT-227 Screw Mount Single 1.2 kV 3.5 V 30 V 118 A 595 W - 55 C + 150 C Tube

Microchip Technology IGBT IGBT PT MOS 8 Combi 600 V 54 A TO-247 69재고 상태
최소: 1
배수: 1

Si TO-247-3 Through Hole Single 600 V 2 V - 30 V, 30 V 96 A 416 W - 55 C + 150 C Tube

Microchip Technology IGBT IGBT PT MOS 7 Single 1200 V 45 A TO-247 27재고 상태
최소: 1
배수: 1

Si TO-247-3 Through Hole Single 1.2 kV 3.3 V - 20 V, 20 V 100 A 625 W - 55 C + 150 C Tube

Microchip Technology IGBT FG, IGBT-COMBI, 600V, TO-264 MAX, RoHS 2재고 상태
최소: 1
배수: 1

Si TO-247-3 Through Hole Single 600 V 2.2 V - 30 V, 30 V 198 A 833 W - 55 C + 150 C Tube
Microchip Technology APT50GP60B2DQ2G
Microchip Technology IGBT IGBT PT MOS 7 Combi 600 V 50 A TO-247 MAX 242재고 상태
최소: 1
배수: 1

Si - 20 V, 20 V Tube
Microchip Technology APT33GF120B2RDQ2G
Microchip Technology IGBT IGBT NPT Low Frequency Combi 1200 V 33 A TO-247 MAX 106재고 상태
최소: 1
배수: 1

Si Through Hole Single 1.2 kV 2.5 V - 30 V, 30 V 64 A 357 W - 55 C + 150 C Tube
Microchip Technology APT75GN60BG
Microchip Technology IGBT IGBT Fieldstop Low Frequency Single 600 V 75 A TO-247 230재고 상태
최소: 1
배수: 1

Si Through Hole Single 600 V 1.45 V - 30 V, 30 V 155 A 536 W - 55 C + 175 C Tube
Microchip Technology APT13GP120BG
Microchip Technology IGBT IGBT PT MOS 7 Single 1200 V 13 A TO-247 56재고 상태
최소: 1
배수: 1

Si Through Hole Single 1.2 kV 3.3 V - 20 V, 20 V 41 A 250 W - 55 C + 150 C Tube
Microchip Technology APT54GA60B
Microchip Technology IGBT IGBT PT MOS 8 Single 600 V 54 A TO-247 66재고 상태
최소: 1
배수: 1

Si Through Hole Single 600 V 2 V - 30 V, 30 V 96 A 416 W - 55 C + 150 C Tube
Microchip Technology APT35GA90B
Microchip Technology IGBT IGBT PT MOS 8 Single 900 V 35 A TO-247 29재고 상태
최소: 1
배수: 1

Si Through Hole Single 900 V 2.5 V - 30 V, 30 V 63 A 290 W - 55 C + 150 C Tube
Microchip Technology APT15GN120BDQ1G
Microchip Technology IGBT IGBT Fieldstop Low Frequency Combi 1200 V 15 A TO-247 30재고 상태
최소: 1
배수: 1

Si Through Hole Single 1.2 kV 1.7 V - 20 V, 20 V 45 A 195 W - 55 C + 150 C Tube
Microchip Technology APT30GN60BG
Microchip Technology IGBT IGBT Fieldstop Low Frequency Single 600 V 30 A TO-247 3재고 상태
150예상 2026-03-02
최소: 1
배수: 1

Si Through Hole Single 600 V 1.5 V - 30 V, 30 V 63 A 203 W - 55 C + 175 C Tube
Microchip Technology APT50GR120L
Microchip Technology IGBT IGBT MOS 8 1200 V 50 A TO-264 20재고 상태
최소: 1
배수: 1

Si TO-264-3 Through Hole Single 1.2 kV 3.5 V 30 V 117 A 694 W - 55 C + 150 C Tube
Microchip Technology APT95GR65B2
Microchip Technology IGBT IGBT MOS 8 650 V 95 A TO-247 MAX 50재고 상태
최소: 1
배수: 1

Si TO-247-3 Through Hole Single 650 V 2.6 V - 30 V, 30 V 208 A 892 W - 55 C + 150 C Tube

Microchip Technology IGBT IGBT Fieldstop Low Frequency Single 1200 V 25 A TO-268 842재고 상태
최소: 1
배수: 1

Si D3PAK-3 SMD/SMT Single 1.2 kV 1.7 V - 30 V, 30 V 67 A 272 W - 55 C + 150 C Tube

Microchip Technology IGBT IGBT Fieldstop Low Frequency Combi 600 V 50 A TO-247 494재고 상태
최소: 1
배수: 1

Si TO-247-3 Through Hole Single 600 V 1.45 V - 30 V, 30 V 107 A 366 W - 55 C + 175 C Tube
Microchip Technology IGBT IGBT Fieldstop Low Frequency Single 1200 V 75 A TO-264 298재고 상태
최소: 1
배수: 1

Si TO-264-3 Through Hole Single 1.2 kV 1.7 V - 30 V, 30 V 200 A 833 W - 55 C + 150 C Tube

Microchip Technology IGBT IGBT PT MOS 8 Combi 900 V 80 A TO-264 299재고 상태
최소: 1
배수: 1

Si TO-247-3 Through Hole Single 900 V 2.5 V - 30 V, 30 V 145 A 625 W - 55 C + 150 C Tube
Microchip Technology APT30GP60BDQ1G
Microchip Technology IGBT IGBT PT MOS 7 Combi 600 V 30 A TO-247 528재고 상태
최소: 1
배수: 1

Si Through Hole Single 600 V 2.2 V - 20 V, 20 V 100 A 463 W - 55 C + 150 C Tube
Microchip Technology IGBT IGBT Fieldstop Low Frequency Combi 600 V 100 A TO-246 11재고 상태
최소: 1
배수: 1

Si TO-264-3 Through Hole Single 600 V 1.45 V - 30 V, 30 V 229 A 625 W - 55 C + 175 C Tube
Microchip Technology IGBT IGBT Fieldstop Low Frequency Combi 600 V 150 A SOT-227 13재고 상태
최소: 1
배수: 1

Si SOT-227-4 Screw Mount Single 600 V 1.5 V 30 V 220 A 536 W - 55 C + 175 C Tube
Microchip Technology IGBT IGBT Fieldstop Low Frequency Combi 600 V 20 A TO-247 76재고 상태
최소: 1
배수: 1

Si TO-247-3 Through Hole Single 600 V 1.5 V - 30 V, 30 V 40 A 136 W - 55 C + 175 C Tube