|
|
MOSFET HIGH POWER_NEW
- IPD60R180C7ATMA1
- Infineon Technologies
-
1:
₩4,395.6
-
7,460재고 상태
|
Mouser 부품 번호
726-IPD60R180C7ATMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
7,460재고 상태
|
|
|
₩4,395.6
|
|
|
₩2,856.4
|
|
|
₩2,012.8
|
|
|
₩1,672.4
|
|
|
₩1,539.2
|
|
최소: 1
배수: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
180 mOhms
|
- 20 V, 20 V
|
3 V
|
24 nC
|
- 55 C
|
+ 150 C
|
68 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPB60R180C7ATMA1
- Infineon Technologies
-
1:
₩3,226.4
-
2,732재고 상태
|
Mouser 부품 번호
726-IPB60R180C7ATMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
2,732재고 상태
|
|
|
₩3,226.4
|
|
|
₩1,761.2
|
|
|
₩1,761.2
|
|
최소: 1
배수: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
180 mOhms
|
- 20 V, 20 V
|
3.5 V
|
24 nC
|
- 55 C
|
+ 150 C
|
68 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPL60R185C7AUMA1
- Infineon Technologies
-
1:
₩5,150.4
-
2,662재고 상태
|
Mouser 부품 번호
726-IPL60R185C7AUMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
2,662재고 상태
|
|
|
₩5,150.4
|
|
|
₩3,344.8
|
|
|
₩2,397.6
|
|
|
₩2,042.4
|
|
|
₩1,983.2
|
|
|
₩1,820.4
|
|
최소: 1
배수: 1
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
185 mOhms
|
- 20 V, 20 V
|
3 V
|
24 nC
|
- 40 C
|
+ 150 C
|
77 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
MOSFET HIGH POWER_NEW
- IPA60R060C7XKSA1
- Infineon Technologies
-
1:
₩10,878
-
224재고 상태
|
Mouser 부품 번호
726-IPA60R060C7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
224재고 상태
|
|
|
₩10,878
|
|
|
₩5,875.6
|
|
|
₩5,402
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
16 A
|
115 mOhms
|
- 20 V, 20 V
|
3.5 V
|
68 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW60R017C7XKSA1
- Infineon Technologies
-
1:
₩26,477.2
-
1,572재고 상태
|
Mouser 부품 번호
726-IPW60R017C7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
1,572재고 상태
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
109 A
|
17 mOhms
|
- 20 V, 20 V
|
3 V
|
240 nC
|
- 55 C
|
+ 150 C
|
446 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPB60R060C7ATMA1
- Infineon Technologies
-
1:
₩11,174
-
1,077재고 상태
|
Mouser 부품 번호
726-IPB60R060C7ATMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
1,077재고 상태
|
|
|
₩11,174
|
|
|
₩7,607.2
|
|
|
₩5,786.8
|
|
|
₩5,402
|
|
최소: 1
배수: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
35 A
|
60 mOhms
|
- 20 V, 20 V
|
1.7 V
|
68 nC
|
- 55 C
|
+ 150 C
|
162 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPP60R040C7XKSA1
- Infineon Technologies
-
1:
₩14,785.2
-
364재고 상태
|
Mouser 부품 번호
726-IPP60R040C7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
364재고 상태
|
|
|
₩14,785.2
|
|
|
₩8,243.6
|
|
|
₩8,095.6
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
50 A
|
40 mOhms
|
- 20 V, 20 V
|
3 V
|
107 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPP60R060C7XKSA1
- Infineon Technologies
-
1:
₩10,878
-
589재고 상태
|
Mouser 부품 번호
726-IPP60R060C7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
589재고 상태
|
|
|
₩10,878
|
|
|
₩5,875.6
|
|
|
₩5,402
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
35 A
|
60 mOhms
|
- 20 V, 20 V
|
3 V
|
68 nC
|
- 55 C
|
+ 150 C
|
162 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPB60R040C7ATMA1
- Infineon Technologies
-
1:
₩15,244
-
1,266재고 상태
|
Mouser 부품 번호
726-IPB60R040C7ATMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
1,266재고 상태
|
|
|
₩15,244
|
|
|
₩10,522.8
|
|
|
₩8,554.4
|
|
|
₩8,539.6
|
|
|
₩8,095.6
|
|
최소: 1
배수: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
50 A
|
40 mOhms
|
- 20 V, 20 V
|
3 V
|
107 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPL60R104C7AUMA1
- Infineon Technologies
-
1:
₩7,903.2
-
3,439재고 상태
|
Mouser 부품 번호
726-IPL60R104C7AUMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
3,439재고 상태
|
|
|
₩7,903.2
|
|
|
₩5,535.2
|
|
|
₩4,588
|
|
|
₩4,070
|
|
|
보기
|
|
|
₩3,611.2
|
|
|
₩3,936.8
|
|
|
₩3,611.2
|
|
|
견적
|
|
최소: 1
배수: 1
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
83 A
|
104 mOhms
|
- 20 V, 20 V
|
3.5 V
|
42 nC
|
- 40 C
|
+ 150 C
|
122 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPP60R099C7XKSA1
- Infineon Technologies
-
1:
₩12,047.2
-
948재고 상태
|
Mouser 부품 번호
726-IPP60R099C7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
948재고 상태
|
|
|
₩12,047.2
|
|
|
₩6,748.8
|
|
|
₩6,082.8
|
|
|
₩3,803.6
|
|
|
₩3,581.6
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
22 A
|
85 mOhms
|
- 20 V, 20 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPA60R180C7XKSA1
- Infineon Technologies
-
1:
₩4,721.2
-
370재고 상태
|
Mouser 부품 번호
726-IPA60R180C7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
370재고 상태
|
|
|
₩4,721.2
|
|
|
₩2,368
|
|
|
₩2,190.4
|
|
|
₩1,761.2
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
346 mOhms
|
- 20 V, 20 V
|
3.5 V
|
24 nC
|
- 55 C
|
+ 150 C
|
29 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW60R099C7XKSA1
- Infineon Technologies
-
1:
₩8,613.6
-
190재고 상태
|
Mouser 부품 번호
726-IPW60R099C7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
190재고 상태
|
|
|
₩8,613.6
|
|
|
₩4,884
|
|
|
₩4,070
|
|
|
₩3,951.6
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
22 A
|
85 mOhms
|
- 20 V, 20 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW60R180C7XKSA1
- Infineon Technologies
-
1:
₩5,979.2
-
219재고 상태
|
Mouser 부품 번호
726-IPW60R180C7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
219재고 상태
|
|
|
₩5,979.2
|
|
|
₩3,300.4
|
|
|
₩2,708.4
|
|
|
₩2,427.2
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
180 mOhms
|
- 20 V, 20 V
|
3 V
|
24 nC
|
- 55 C
|
+ 150 C
|
68 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPZ60R099C7XKSA1
- Infineon Technologies
-
1:
₩9,028
-
26재고 상태
|
Mouser 부품 번호
726-IPZ60R099C7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
26재고 상태
|
|
|
₩9,028
|
|
|
₩5,283.6
|
|
|
₩4,410.4
|
|
|
₩4,336.4
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
600 V
|
22 A
|
99 mOhms
|
- 20 V, 20 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPA60R099C7XKSA1
- Infineon Technologies
-
1:
₩7,829.2
-
396재고 상태
|
Mouser 부품 번호
726-IPA60R099C7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
396재고 상태
|
|
|
₩7,829.2
|
|
|
₩4,203.2
|
|
|
₩3,581.6
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
650 V
|
12 A
|
190 mOhms
|
- 20 V, 20 V
|
3.5 V
|
42 nC
|
- 55 C
|
+ 150 C
|
33 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPA60R120C7XKSA1
- Infineon Technologies
-
1:
₩6,615.6
-
500재고 상태
-
500예상 2026-03-23
|
Mouser 부품 번호
726-IPA60R120C7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
500재고 상태
500예상 2026-03-23
|
|
|
₩6,615.6
|
|
|
₩3,418.8
|
|
|
₩3,108
|
|
|
₩2,782.4
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
11 A
|
120 mOhms
|
- 20 V, 20 V
|
3 V
|
34 nC
|
- 55 C
|
+ 150 C
|
32 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPP60R120C7XKSA1
- Infineon Technologies
-
1:
₩6,615.6
-
83재고 상태
-
500예상 2026-03-23
|
Mouser 부품 번호
726-IPP60R120C7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
83재고 상태
500예상 2026-03-23
|
|
|
₩6,615.6
|
|
|
₩3,418.8
|
|
|
₩3,108
|
|
|
₩2,767.6
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
19 A
|
120 mOhms
|
- 20 V, 20 V
|
3 V
|
34 nC
|
- 55 C
|
+ 150 C
|
92 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPP60R180C7XKSA1
- Infineon Technologies
-
1:
₩4,721.2
-
376재고 상태
-
500예상 2026-07-09
|
Mouser 부품 번호
726-IPP60R180C7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
376재고 상태
500예상 2026-07-09
|
|
|
₩4,721.2
|
|
|
₩2,368
|
|
|
₩2,146
|
|
|
₩1,761.2
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
155 mOhms
|
- 20 V, 20 V
|
3 V
|
24 nC
|
- 55 C
|
+ 150 C
|
68 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW60R060C7XKSA1
- Infineon Technologies
-
1:
₩11,381.2
-
278재고 상태
-
240예상 2026-07-30
|
Mouser 부품 번호
726-IPW60R060C7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
278재고 상태
240예상 2026-07-30
|
|
|
₩11,381.2
|
|
|
₩6,275.2
|
|
|
₩6,053.2
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
35 A
|
52 mOhms
|
- 20 V, 20 V
|
3 V
|
68 nC
|
- 55 C
|
+ 150 C
|
162 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW60R120C7XKSA1
- Infineon Technologies
-
1:
₩7,562.8
-
223재고 상태
|
Mouser 부품 번호
726-IPW60R120C7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
223재고 상태
|
|
|
₩7,562.8
|
|
|
₩4,247.6
|
|
|
₩3,522.4
|
|
|
₩3,330
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
19 A
|
120 mOhms
|
- 20 V, 20 V
|
3 V
|
34 nC
|
- 55 C
|
+ 150 C
|
92 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPL60R065C7AUMA1
- Infineon Technologies
-
1:
₩11,011.2
-
6,665예상 2026-06-11
|
Mouser 부품 번호
726-IPL60R065C7AUMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
6,665예상 2026-06-11
|
|
|
₩11,011.2
|
|
|
₩7,459.2
|
|
|
₩5,638.8
|
|
|
₩5,342.8
|
|
|
₩5,268.8
|
|
최소: 1
배수: 1
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
29 A
|
65 mOhms
|
- 20 V, 20 V
|
3 V
|
68 nC
|
- 40 C
|
+ 150 C
|
180 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW60R040C7XKSA1
- Infineon Technologies
-
1:
₩15,584.4
-
2,720주문 중
|
Mouser 부품 번호
726-IPW60R040C7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
2,720주문 중
주문 중:
560 예상 2026-03-30
2,160 예상 2026-04-23
|
|
|
₩15,584.4
|
|
|
₩9,294.4
|
|
|
₩8,672.8
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
50 A
|
34 mOhms
|
- 20 V, 20 V
|
3 V
|
107 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPB60R099C7ATMA1
- Infineon Technologies
-
1:
₩8,080.8
-
1,941주문 중
|
Mouser 부품 번호
726-IPB60R099C7ATMA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
1,941주문 중
|
|
|
₩8,080.8
|
|
|
₩5,505.6
|
|
|
₩3,951.6
|
|
|
₩3,833.2
|
|
|
₩3,581.6
|
|
최소: 1
배수: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
22 A
|
99 mOhms
|
- 20 V, 20 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPZ60R040C7XKSA1
- Infineon Technologies
-
1:
₩16,383.6
-
240예상 2026-05-06
|
Mouser 부품 번호
726-IPZ60R040C7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
240예상 2026-05-06
|
|
|
₩16,383.6
|
|
|
₩9,812.4
|
|
|
₩9,264.8
|
|
최소: 1
배수: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
600 V
|
50 A
|
40 mOhms
|
- 20 V, 20 V
|
3.5 V
|
107 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
대한민국