SiT8008 Low Power Programmable Oscillators

SiTime SiT8008 and SiT8008B low-power programmable oscillators include a programmable drive strength feature to provide a simple, flexible tool to optimize the clock rise/fall time for specific applications. The programmable drive strength improves system radiated electromagnetic interference (EMI) by slowing down the clock rise/fall time. The programmable drive strength also improves the downstream clock receiver’s (RX) jitter by decreasing (speeding up) the clock rise/fall time. The components have the ability to drive large capacitive loads while maintaining full swing with sharp edge rates. The oscillators exhibit EMI reduction by slowing rise/fall time and jitter reduction with faster rise/fall time. Power supply noise can be a source of jitter for the downstream chipset. One way to reduce this jitter is to speed up the rise/fall time of the input clock. Some chipsets may also require faster rise/fall time in order to reduce their sensitivity to this type of jitter. The components have high output load capability. The rise/fall time of the input clock varies as a function of the actual capacitive load the clock drives. At any given drive strength, the rise/fall time becomes slower as the output load increases. The devices can support up to 60pF or higher in maximum capacitive loads with drive strength settings.

결과: 152
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS 패키지/케이스 주파수 주파수 안정성 부하 용량 공급 전압 - 최소 공급 전압 - 최대 출력 형식 전류 정격 최저 작동온도 최고 작동온도 자격 시리즈
SiTime MEMS 발진기 80MHz 3.3Volt 20ppm -40C +85C 재고 없음
최소: 1
배수: 1
: 250

5 mm x 3.2 mm 80 MHz 20 PPM 15 pF 2.97 V 3.63 V LVCMOS 4.5 mA - 40 C + 85 C SiT8008
SiTime MEMS 발진기 100MHz +/-20ppm 3.3V+/-10% -40C+85C 재고 없음
최소: 1
배수: 1
: 250

5 mm x 3.2 mm 100 MHz 20 PPM 15 pF 2.97 V 3.63 V LVCMOS 4.5 mA - 40 C + 85 C SiT8008
SiTime MEMS 발진기 59.49467MHz 3.3V 20ppm -40C +85C 재고 없음
최소: 1
배수: 1
: 250

5 mm x 3.2 mm 59.49767 MHz 20 PPM 15 pF 2.97 V 3.63 V LVCMOS 4.5 mA - 40 C + 85 C SiT8008
SiTime MEMS 발진기 59.40706MHz +/-20ppm 3.3V+/-10% -40C+85C 재고 없음
최소: 1
배수: 1
: 250

5 mm x 3.2 mm 59.40706 MHz 20 PPM 15 pF 2.97 V 3.63 V LVCMOS 4.5 mA - 40 C + 85 C SiT8008
SiTime MEMS 발진기 98.304MHz 25ppm 1.8V -40C to 85C 재고 없음
최소: 1
배수: 1
: 250

5 mm x 3.2 mm 98.304 MHz 25 PPM 15 pF 1.62 V 1.98 V LVCMOS 3.9 mA - 40 C + 85 C SiT8008
SiTime MEMS 발진기 20MHz 50ppm 3.3V -40 to +85C 재고 없음
최소: 1
배수: 1
: 250

2 mm x 1.6 mm 20 MHz 50 PPM 15 pF 2.97 V 3.63 V LVCMOS 4.5 mA - 40 C + 85 C SiT8008
SiTime MEMS 발진기 80MHz 50ppm 3.3V -40 to +85C 재고 없음
최소: 1
배수: 1
: 250

2 mm x 1.6 mm 80 MHz 50 PPM 15 pF 2.97 V 3.63 V LVCMOS 4.5 mA - 40 C + 85 C SiT8008
SiTime MEMS 발진기 33.33333MHz 2.5V 50ppm -40C +85C 재고 없음
최소: 1
배수: 1
: 250

2 mm x 1.6 mm 33.33333 MHz 50 PPM 15 pF 2.25 V 2.75 V LVCMOS 4.2 mA - 40 C + 85 C SiT8008
SiTime MEMS 발진기 4.718592MHz 3.3V 50ppm -20C +70C 재고 없음
최소: 1
배수: 1
: 250

5 mm x 3.2 mm 4.718592 MHz 50 PPM 15 pF 2.97 V 3.63 V LVCMOS - 20 C + 70 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 12.288MHz 3.3V 25ppm -20C +70C 재고 없음
최소: 1
배수: 1
: 1,000

7 mm x 5 mm 12.288 MHz 25 PPM 15 pF 2.97 V 3.63 V LVCMOS - 20 C + 70 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 3.6864MHz 3.3V 25ppm -20C +70C 재고 없음
최소: 1
배수: 1
: 1,000

7 mm x 5 mm 3.6864 MHz 25 PPM 15 pF 2.97 V 3.63 V LVCMOS - 20 C + 70 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 13.91222MHz 3.3V 20ppm -20C +70C 재고 없음
최소: 1
배수: 1
: 250

2.5 mm x 2 mm 13.91222 MHz 20 PPM 15 pF 2.97 V 3.63 V LVCMOS - 20 C + 70 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 14.64MHz 20ppm 3.3V -20C +70C 재고 없음
최소: 1
배수: 1
: 250

2.5 mm x 2 mm 14.64 MHz 20 PPM 15 pF 2.97 V 3.63 V LVCMOS - 20 C + 70 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 8MHz 3.3V -20C +70C 25ppm 재고 없음
최소: 1
배수: 1
: 250

2.5 mm x 2 mm 8 MHz 25 PPM 15 pF 2.97 V 3.63 V LVCMOS - 20 C + 70 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 32MHz 2.5V -20C +70C 50ppm 재고 없음
최소: 1
배수: 1
: 1,000

3.2 mm x 2.5 mm 32 MHz 50 PPM 15 pF 2.25 V 2.75 V LVCMOS - 20 C + 70 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 33.33333MHz 1.8V 50ppm -20C +70C 재고 없음
최소: 1
배수: 1
: 250

5 mm x 3.2 mm 33.33333 MHz 50 PPM 15 pF 1.62 V 1.98 V LVCMOS - 20 C + 70 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 10MHz 20ppm 1.8V -20C +70C 재고 없음
최소: 1
배수: 1
: 250

AEC-Q100 SiT8008B
SiTime MEMS 발진기 24.998125MHz 3.3V -20C +70C 25ppm 재고 없음
최소: 1
배수: 1
: 250

7 mm x 5 mm 4.998125 MHz 25 PPM 15 pF 2.97 V 3.63 V LVCMOS - 20 C + 70 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 2.4576MHz 3.3V -20C +70C 50ppm 재고 없음
최소: 1
배수: 1
: 1,000

7 mm x 5 mm 2.4576 MHz 50 PPM 15 pF 2.97 V 3.63 V LVCMOS 4.5 mA - 20 C + 70 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 8MHz 1.8V 25ppm -40C +85C 재고 없음
최소: 1
배수: 1
: 1,000

2.5 mm x 2 mm 8 MHz 25 PPM 15 pF 1.62 V 1.98 V LVCMOS, HCMOS - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 11.2896MHz 3.3V 25ppm -40C +85C 재고 없음
최소: 1
배수: 1
: 1,000

2.5 mm x 2 mm 11.2896 MHz 25 PPM 15 pF 2.97 V 3.63 V LVCMOS, HCMOS - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 11.2896MHz 2.5V 25ppm -40C +85C 재고 없음
최소: 1
배수: 1
: 1,000

2.5 mm x 2 mm 11.2896 MHz 25 PPM 15 pF 2.25 V 2.75 V LVCMOS, HCMOS - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 1.8432MHz 1.8V 25ppm -40C +85C 재고 없음
최소: 1
배수: 1
: 1,000

1.8432 MHz 25 PPM 1.62 V 1.98 V LVCMOS, HCMOS - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 11.2896MHz 1.8V 25ppm -40C +85C 재고 없음
최소: 1
배수: 1
: 1,000

2.5 mm x 2 mm 11.2896 MHz 25 PPM 15 pF 1.62 V 1.98 V LVCMOS, HCMOS - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 1.8432MHz 2.5-3.3V 25ppm -40C +85C 재고 없음
최소: 1
배수: 1
: 1,000

1.8432 MHz 25 PPM 2.25 V 3.63 V LVCMOS, HCMOS - 40 C + 85 C AEC-Q100 SiT8008B