SiT8008 Low Power Programmable Oscillators

SiTime SiT8008 and SiT8008B low-power programmable oscillators include a programmable drive strength feature to provide a simple, flexible tool to optimize the clock rise/fall time for specific applications. The programmable drive strength improves system radiated electromagnetic interference (EMI) by slowing down the clock rise/fall time. The programmable drive strength also improves the downstream clock receiver’s (RX) jitter by decreasing (speeding up) the clock rise/fall time. The components have the ability to drive large capacitive loads while maintaining full swing with sharp edge rates. The oscillators exhibit EMI reduction by slowing rise/fall time and jitter reduction with faster rise/fall time. Power supply noise can be a source of jitter for the downstream chipset. One way to reduce this jitter is to speed up the rise/fall time of the input clock. Some chipsets may also require faster rise/fall time in order to reduce their sensitivity to this type of jitter. The components have high output load capability. The rise/fall time of the input clock varies as a function of the actual capacitive load the clock drives. At any given drive strength, the rise/fall time becomes slower as the output load increases. The devices can support up to 60pF or higher in maximum capacitive loads with drive strength settings.

결과: 152
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS 패키지/케이스 주파수 주파수 안정성 부하 용량 공급 전압 - 최소 공급 전압 - 최대 출력 형식 전류 정격 최저 작동온도 최고 작동온도 자격 시리즈
SiTime MEMS 발진기 33.333333MHz 1.8V -40C +85C 20ppm 675재고 상태
최소: 1
배수: 1
: 250

2.5 mm x 2 mm 33.333333 MHz 20 PPM 15 pF 1.62 V 1.98 V LVCMOS, HCMOS 4.1 mA - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 12.0MHz -40C +85C 3.3V 50ppm 112재고 상태
최소: 1
배수: 1
: 250

12 MHz 50 PPM 2.97 V 3.63 V LVCMOS, HCMOS 4.5 mA - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 50.0MHz -40C +85C 3.3V 50ppm 172재고 상태
최소: 1
배수: 1
: 250

50 MHz 50 PPM 2.97 V 3.63 V LVCMOS, HCMOS 4.5 mA - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 20MHz 50ppm 3.3V -40C +85C 164재고 상태
최소: 1
배수: 1
: 250

2 mm x 1.6 mm 20 MHz 50 PPM 15 pF 2.97 V 3.63 V LVCMOS, HCMOS 4.5 mA - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 10.0MHz -20C +70C 3.3V 50ppm 239재고 상태
최소: 1
배수: 1
: 250

7 mm x 5 mm 10 MHz 50 PPM 60 pF 2.97 V 3.63 V LVCMOS, HCMOS - 20 C + 70 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 -40 to 85C, 2016, 50ppm, 3.3V, 31.25MHz, OE, 250 pcs T&R 8 mm 54재고 상태
250예상 2026-04-28
최소: 1
배수: 1
: 250

2 mm x 1.6 mm 31.25 MHz 50 PPM 15 pF 2.97 V 3.63 V LVCMOS, HCMOS 3.8 mA - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 25.0MHz -20C +70C 3.3V 20ppm 41재고 상태
최소: 1
배수: 1
: 250

7 mm x 5 mm 25 MHz 20 PPM 60 pF 2.97 V 3.63 V LVCMOS, HCMOS - 20 C + 70 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 25.0MHz -40C +85C 3.3V 50ppm 343재고 상태
최소: 1
배수: 1
: 250

2.5 mm x 2 mm 25 MHz 50 PPM 60 pF 2.97 V 3.63 V LVCMOS, HCMOS 4.5 mA - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 25.0MHz -40C +85C 2.5-3.3V 50ppm 128재고 상태
250예상 2026-03-23
최소: 1
배수: 1
: 250

3.2 mm x 2.5 mm 25 MHz 50 PPM 60 pF 2.25 V 3.63 V LVCMOS, HCMOS 4.5 mA - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 100MHz 2.5-3.3V -40C +85C 50ppm 881재고 상태
최소: 1
배수: 1
: 1,000

100 MHz 50 PPM 2.25 V 3.63 V LVCMOS, HCMOS 4.5 mA - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 90MHz +/-50ppm -40C to85C 3.3V 245재고 상태
최소: 1
배수: 1
: 250

5 mm x 3.2 mm 90 MHz 50 PPM 15 pF 2.97 V 3.63 V LVCMOS 4.5 mA - 40 C + 85 C SiT8008
SiTime MEMS 발진기 8.00MHz -20C +70C 3.3V 50ppm 408재고 상태
최소: 1
배수: 1
: 250

7 mm x 5 mm 8 MHz 50 PPM 60 pF 2.97 V 3.63 V LVCMOS, HCMOS - 20 C + 70 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 25.0MHz -20C +70C 3.3V 50ppm 212재고 상태
최소: 1
배수: 1
: 250

7 mm x 5 mm 25 MHz 50 PPM 60 pF 2.97 V 3.63 V LVCMOS, HCMOS - 20 C + 70 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 -40 to 85C, 2520, 25ppm, 2.5V, 25MHz, OE, 250 pcs T&R 8 mm 220재고 상태
최소: 1
배수: 1
: 250

2.5 mm x 2 mm 25 MHz 25 PPM 15 pF 2.25 V 2.75 V LVCMOS, HCMOS 4.2 mA - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 24.0MHz -40C +85C 2.5-3.3V 50ppm 29재고 상태
최소: 1
배수: 1
: 250

3.2 mm x 2.5 mm 24 MHz 50 PPM 60 pF 2.25 V 3.63 V LVCMOS, HCMOS 4.5 mA - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 16MHz 3.3V 50ppm -40C +85C 449재고 상태
최소: 1
배수: 1
: 250

2.5 mm x 2 mm 16 MHz 50 PPM 2.97 V 3.63 V LVCMOS, HCMOS - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 50MHz -40C +85C 3.3V 50ppm 248재고 상태
최소: 1
배수: 1
: 250

3.2 mm x 2.5 mm 50 MHz 50 PPM 60 pF 2.97 V 3.63 V LVCMOS, HCMOS 4.5 mA - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 25.0MHz -40C +85C 3.3V 50ppm 297재고 상태
최소: 1
배수: 1
: 250

25 MHz 50 PPM 2.97 V 3.63 V LVCMOS, HCMOS 4.5 mA - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 33.333333MHz 1.8V -40C +85C 20ppm 330재고 상태
최소: 1
배수: 1
: 250

2.5 mm x 2 mm 33.333333 MHz 20 PPM 15 pF 1.62 V 1.98 V LVCMOS 3.9 mA - 40 C + 85 C SiT8008
SiTime MEMS 발진기 2.4576MHz 3.3V -20C +70C 50ppm 288재고 상태
최소: 1
배수: 1
: 250

7 mm x 5 mm 2.4576 MHz 50 PPM 15 pF 2.97 V 3.63 V LVCMOS, HCMOS 4.5 mA - 20 C + 70 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 50.0MHz -40C +85C 1.8V 50ppm 235재고 상태
최소: 1
배수: 1
: 250

2.5 mm x 2 mm 50 MHz 50 PPM 60 pF 1.62 V 1.98 V LVCMOS, HCMOS - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 25.0MHz -40C +85C 3.3V 25ppm 445재고 상태
최소: 1
배수: 1
: 250

3.2 mm x 2.5 mm 25 MHz 25 PPM 60 pF 2.97 V 3.63 V LVCMOS, HCMOS - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 25.0MHz -40C +85C 2.5-3.3V 25ppm 922재고 상태
최소: 1
배수: 1
: 250

2.5 mm x 2 mm 25 MHz 25 PPM 60 pF 2.25 V 3.63 V LVCMOS, HCMOS - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS 발진기 0 0 72재고 상태
최소: 1
배수: 1
: 250

2 mm x 1.6 mm 31.25 MHz 50 PPM 15 pF 2.97 V 3.63 V LVCMOS 4.5 mA - 40 C + 85 C SiT8008
SiTime MEMS 발진기 33,33333MHz 1.8V 50ppm -20C +70C 78재고 상태
최소: 1
배수: 1
: 250

5 mm x 3.2 mm 33.33333 MHz 50 PPM 15 pF 1.62 V 1.98 V LVCMOS 3.9 mA - 20 C + 70 C SiT8008