Micro Commercial Components (MCC) SICWx 탄화 규소 (SiC) MOSFET
09-03-2024
09-03-2024
고속 스위칭 기능을 갖춘 650V SiC MOSFET이며 TO-247 패키지로 제공됩니다.
Micro Commercial Components (MCC) SICW0x 1200V SiC N-채널 MOSFET
09-03-2024
09-03-2024
다목적 TO-247-4, TO-247-4L 및 TO-247AB 패키지에서 성능을 증폭합니다.
Micro Commercial Components (MCC) DC Fast Charging Solutions
08-01-2024
08-01-2024
Supports EVs with high-performance components designed for speed, safety, and system efficiency.
Micro Commercial Components (MCC) SICW028N120A4 1200V SiC MOSFET
03-21-2024
03-21-2024
Designed with a 28mΩ low on-resistance and comes in a TO-247-4 package with a Kelvin source pin.
Micro Commercial Components (MCC) SICW400N170A 1700V SiC MOSFET
03-19-2024
03-19-2024
Features ultra-low on-resistance of only 400mΩ and high blocking voltage capability.
Micro Commercial Components (MCC) 1200V SiC N-Channel MOSFET
11-16-2022
11-16-2022
High switching frequency and high blocking voltage with low on-resistance and avalanche capability.
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Infineon Technologies CoolSiC™ 자동차용 750V G2 MOSFET
12-19-2025
12-19-2025
전기차(EV) 애플리케이션의 까다로운 요구 사항을 충족하도록 설계되었습니다.
Central Semiconductor 1,700V N 채널 SiC(탄화 규소) MOSFET
11-20-2025
11-20-2025
These MOSFETS are designed for high-speed switching and fast reverse recovery applications.
Microchip Technology 1 200 V SiC MOSFET »
09-25-2025
09-25-2025
MOSFET은 빠른 스위칭 속도와 함께 더 가볍고 컴팩트한 솔루션으로 높은 효율성을 제공합니다.
IXYS IXSJxN120R1K 1 200 V SiC 전력 MOSFET
08-27-2025
08-27-2025
18 mΩ 또는 36 mΩ의 낮은 RDS (on)으로 최대 1 200 V 차단 전압을 제공합니다.
ROHM Semiconductor SCT2H12NWB 1700V N-채널 SiC 전력 MOSFET
08-21-2025
08-21-2025
1700V 드레인-소스 전압(VDSS) 및 3.9A 연속 드레인 전류(ID) 정격의 SiC MOSFET.
Infineon Technologies CoolSiC™ 750V G2 실리콘 카바이드 MOSFET
06-03-2025
06-03-2025
최대 78mΩ 드레인 소스온 저항을 제공하는 자동차 및 산업용 인증 MOSFET입니다.
onsemi NVBG050N170M1 SiC(탄화 규소) MOSFET
05-22-2025
05-22-2025
최대 76 mΩ @ 20 V 최대 RDS(ON) 및 1 700 V 드레인-소스 전압이 특징입니다.
APC-E Silicon Carbide (SiC) MOSFETs
05-06-2025
05-06-2025
Delivers high power, high frequency, and unmatched performance for demanding applications.
IXYS IXSA80N120L2-7 SiC MOSFET
03-06-2025
03-06-2025
Single-switch MOSFET that features 1200V, 30mΩ, 79A industrial-grade device in a TO263-7L package.
IXYS IXSA40N120L2-7 SiC MOSFET
03-06-2025
03-06-2025
Single-switch MOSFET that features 1200V, 80mΩ, 41A industrial-grade device in a TO263-7L package.
Central Semiconductor CDMS24783-120 N-Channel SiC MOSFET
02-18-2025
02-18-2025
Offers a 1200V drain-source voltage for high-speed switching and fast reverse recovery applications
IXYS IXSH80N120L2KHV SiC MOSFET
02-18-2025
02-18-2025
1200V, 30mΩ, and 79A MOSFET, recommended for use in industrial switch mode power supplies.
IXYS IXSH40N120L2KHV SiC MOSFET
02-18-2025
02-18-2025
1200V, 80mΩ, and 41A MOSFET, recommended for use in industrial switch mode power supplies.
SemiQ GEN3 1200V SiC MOSFET 디스크리트 소자
01-02-2025
01-02-2025
Developed to increase performance and cut switching losses in high-voltage applications.
Navitas Semiconductor 650V Gen-3 Fast (G3F) SiC MOSFETs
09-06-2024
09-06-2024
Ideal for AI data center power supplies, EV charging, energy storage systems, and solar solutions.
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