Synchronous DRAM (SDRAM)

Intelligent Memory Synchronous DRAM (SDRAM) encompasses 64Mb, 128Mb, 256Mb, and 512Mb density options with a 166MHz maximum speed in FBGA and TSOP packages. These components feature programmable burst lengths, auto/self-refresh, and integrated ECC error correction. Available with commercial, industrial, and automotive grades, the Intelligent Memory SDRAM devices offer a 166Mbps data rate and an 8-bit to 32-bit data bus width range.

결과: 18
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 타입 메모리 크기 데이터 버스 너비 최대 클록 주파수 패키지/케이스 조직 액세스 시간 공급 전압 - 최소 공급 전압 - 최대 최저 작동온도 최고 작동온도 시리즈 포장
Intelligent Memory DRAM SDRAM, 256Mb, 3.3V, 16Mx16, 166MHz (166Mbps), 0C to +70C, FBGA-54 694재고 상태
최소: 1
배수: 1

SDRAM 256 Mbit 16 bit 166 MHz FBGA-54 16 M x 16 5 ns 3 V 3.6 V 0 C + 70 C IM2516SD Tray
Intelligent Memory DRAM SDRAM, 256Mb, 3.3V, 16Mx16, 166Mhz (1666Mbps), -40C to +85C, FBGA-54 669재고 상태
최소: 1
배수: 1

SDRAM 256 Mbit 16 bit 166 MHz FBGA-54 16 M x 16 5 ns 3 V 3.6 V - 40 C + 85 C IM2516SD Tray
Intelligent Memory DRAM SDRAM, 512Mb, 3.3V, 32Mx16, 166Mhz (1666Mbps), -40C to +85C, FBGA-54 271재고 상태
최소: 1
배수: 1

SDRAM 512 Mbit 16 bit 166 MHz FBGA-54 32 M x 16 5.4 ns 3 V 3.6 V - 40 C + 85 C IM5116SD Tray
Intelligent Memory DRAM SDRAM, 128Mb, 3.3V, 8Mx16, 166MHz (166Mbps), -40C to +85C, FBGA-54 437재고 상태
최소: 1
배수: 1

SDRAM 128 Mbit 16 bit 166 MHz FBGA-54 8 M x 16 5 ns 3 V 3.6 V - 40 C + 85 C IM1216SD Tray
Intelligent Memory DRAM SDRAM, 128Mb, 3.3V, 8Mx16, 166MHz (166Mbps), -40C to +85C, TSOPII-54 512재고 상태
최소: 1
배수: 1

SDRAM 128 Mbit 16 bit 166 MHz TSOP-II-54 8 M x 16 5 ns 3 V 3.6 V - 40 C + 85 C IM1216SD Tray
Intelligent Memory DRAM SDRAM, 256Mb, 3.3V, 32Mx8, 166MHz (166Mbps), 0C to +70C, TSOPII-54 444재고 상태
최소: 1
배수: 1

SDRAM 256 Mbit 8 bit 166 MHz TSOP-II-54 32 M x 8 5.4 ns 3 V 3.6 V 0 C + 70 C IM2508SD Tray
Intelligent Memory DRAM SDRAM, 64Mb, 3.3V, 4Mx16, 166MHz (166Mbps), -40C to +85C, FBGA-54 241재고 상태
최소: 1
배수: 1

SDRAM 64 Mbit 16 bit 166 MHz FBGA-54 4 M x 16 5.4 ns 3 V 3.6 V - 40 C + 85 C IM6416SD Tray
Intelligent Memory DRAM SDRAM, 64Mb, 3.3V, 4Mx16, 166MHz (166Mbps), -40C to +85C, TSOPII-54 43재고 상태
최소: 1
배수: 1

SDRAM 64 Mbit 16 bit 166 MHz TSOP-II-54 4 M x 16 5.4 ns 3 V 3.6 V - 40 C + 85 C IM6416SD Tray
Intelligent Memory DRAM SDRAM, 64Mb, 3.3V, 2Mx32, 166MHz (166Mbps), -40C to +85C, TSOPII-86 284재고 상태
최소: 1
배수: 1

SDRAM 64 Mbit 32 bit 166 MHz TSOP-II-86 2 M x 32 5.4 ns 3 V 3.6 V - 40 C + 85 C IM6432SD Tray
Intelligent Memory DRAM ECC SDRAM, 256Mb, 3.3V, 8Mx32, 166MHz (166Mbps), -40C to +85C, TSOPII-86 176재고 상태
최소: 1
배수: 1

SDRAM 256 Mbit 32 bit 166 MHz TSOP-II-86 8 M x 32 5.4 ns 3 V 3.6 V - 40 C + 85 C IME2532SD Tray
Intelligent Memory DRAM ECC SDRAM, 512Mb, 3.3V, 64Mx8, 133MHz (133Mbps), -40C to +85C, TSOPII-54 79재고 상태
최소: 1
배수: 1

SDRAM 512 Mbit 8 bit 133 MHz TSOP-II-54 64 M x 8 5.4 ns 3 V 3.6 V - 40 C + 85 C IME5108SD Tray
Intelligent Memory DRAM ECC SDRAM, 512Mb, 3.3V, 32Mx16, 133MHz (133Mbps), 0C to +70C, TSOPII-54
216예상 2026-04-27
최소: 1
배수: 1

SDRAM 512 Mbit 16 bit 133 MHz TSOP-II-54 32 M x 16 5.4 ns 3 V 3.6 V 0 C + 70 C IME5116SD Tray
Intelligent Memory DRAM SDRAM, 128Mb, 3.3V, 4Mx32, 166MHz (166Mbps), -40C to +85C, TSOPII-86 364재고 상태
최소: 1
배수: 1

SDRAM 128 Mbit 32 bit 166 MHz TSOP-86 4 M x 32 5.4 ns 3 V 3.6 V - 40 C + 85 C IM1232SD Tray
Intelligent Memory DRAM ECC SDRAM, 512Mb, 3.3V, 16Mx32, 166MHz (166Mbps), -40C to +85C, TSOPII-86 144재고 상태
최소: 1
배수: 1

SDRAM 512 Mbit 32 bit 166 MHz TSOP-II-86 16 M x 32 5.4 ns 3 V 3.6 V - 40 C + 85 C IME5132SD Tray
Intelligent Memory DRAM SDRAM, 256Mb, 3.3V, 16Mx16, 166MHz (166Mbps), -40C to +85C, TSOPII-54
232예상 2026-04-01
최소: 1
배수: 1

SDRAM 256 Mbit 16 bit 166 MHz TSOP-II-54 16 M x 16 5.4 ns 3 V 3.6 V - 40 C + 85 C IM2516SD Tray
Intelligent Memory DRAM ECC SDRAM, 512Mb, 3.3V, 32Mx16, 133MHz (133Mbps), -40C to +85C, TSOPII-54
106예상 2026-04-22
최소: 1
배수: 1

SDRAM 512 Mbit 16 bit 133 MHz TSOP-II-54 32 M x 16 5.4 ns 3 V 3.6 V - 40 C + 85 C IME5116SD Tray
Intelligent Memory DRAM SDRAM, 64Mb, 3.3V, 2Mx32, 166MHz (166Mbps), -40C to +85C, FBGA-54 비재고 리드 타임 8 주
최소: 1
배수: 1

SDRAM 64 Mbit 32 bit 166 MHz FBGA-90 2 M x 32 5.4 ns 3 V 3.6 V - 40 C + 85 C IM6432SD Tray
Intelligent Memory DRAM ECC SDRAM, 512Mb, 3.3V, 64Mx8, 133MHz (133Mbps), 0C to +70C, TSOPII-54 리드 타임 12 주
최소: 1
배수: 1

SDRAM 512 Mbit 8 bit 133 MHz TSOP-II-54 64 M x 8 5.4 ns 3 V 3.6 V 0 C + 70 C IME5108SD Tray