High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

결과: 69
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 장착 스타일 패키지/케이스 채널 수 Vds - 드레인 소스 항복 전압 Id - 연속 드레인 전류 Rds On - 드레인 소스 저항 Vgs - 게이트 소스 전압 Vgs th - 게이트 소스 역치 전압 Qg - 게이트 전하 최저 작동온도 최고 작동온도 Pd - 전력 발산 채널 모드 자격 상표명
onsemi SiC MOSFET 1200V/9MOSICFETG3TO247 368재고 상태
₩111,446.4
최소: 1
배수: 1
Through Hole TO-247-4 1 Channel 1.2 kV 120 A 11 mOhms - 20 V, + 20 V 4 V 234 nC - 55 C + 175 C 789 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 650V/80MOSICFETG3TO220-3 534재고 상태
2,000예상 2027-01-22
₩17,253.6
₩12,027.6
최소: 1
배수: 1
최대: 1,000
Through Hole TO-220-3 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 650V/30MOSICFETG3TO220-3 425재고 상태
1,000예상 2026-12-28
₩41,480.4
₩33,212.4
₩28,719.6
₩25,740
최소: 1
배수: 1
최대: 1,000
Through Hole TO-220-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 750V/18MOSICFETG4TO263 278재고 상태
컷 테이프
₩38,157.6
₩28,501.2
₩24,648
₩22,089.6
릴
₩22,089.6
최소: 1
배수: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 72 A 18 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 259 W Enhancement SiC FET
onsemi SiC MOSFET 650V/30MOSICFETG3TO247 513재고 상태
₩40,216.8
₩25,896
최소: 1
배수: 1
최대: 300
Through Hole TO-247-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 650V/30MOSICFETG3TO220-3 902재고 상태
₩40,029.6
₩25,740
최소: 1
배수: 1
Through Hole TO-220-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 5 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 650V/40MOSICFETG3TO247-3 1,166재고 상태
₩30,435.6
₩18,142.8
최소: 1
배수: 1
Through Hole TO-247-3 1 Channel 650 V 54 A 42 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 1200V/80MOSICFETG3TO247-3 1,142재고 상태
₩33,009.6
₩20,139.6
최소: 1
배수: 1
Through Hole TO-247-3 1 Channel 1.2 kV 33 A 100 mOhms - 25 V, + 25 V 6 V 51 nC - 55 C + 175 C 254.2 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 650V/7MOSICFETG3TO247-4 445재고 상태
₩121,118.4
₩104,005.2
최소: 1
배수: 1
Through Hole TO-247-4 1 Channel 650 V 120 A 9 mOhms - 12 V, + 12 V 6 V 214 nC - 55 C + 175 C 789 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 1200V/16MOSICFETG3TO24 466재고 상태
₩110,214
₩90,636
최소: 1
배수: 1
Through Hole TO-247-4 1 Channel 1.2 kV 107 A 21 mOhms - 20 V, + 20 V 4 V 218 nC - 55 C + 175 C 517 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 650V/40MOSICFETG3TO247-4 3,278재고 상태
₩30,888
₩18,486
최소: 1
배수: 1
Through Hole TO-247-4 1 Channel 650 V 54 A 52 mOhms - 25 V, + 25 V 4 V 43 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 650V/80MOSICFETG3TO220-3 472재고 상태
₩18,283.2
₩10,779.6
₩9,952.8
₩9,282
최소: 1
배수: 1
Through Hole TO-220-3 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 750V/44MOSICFETG4TO263 648재고 상태
컷 테이프
₩21,886.8
₩12,526.8
₩11,856
릴
₩11,856
최소: 1
배수: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 35.6 A 56 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 181 W Enhancement SiC FET
onsemi SiC MOSFET 650V/80MOSICFETG3TO247-3 639재고 상태
₩19,203.6
₩10,998
₩10,186.8
₩9,765.6
최소: 1
배수: 1
Through Hole TO-247-3 1 Channel 650 V 31 A 100 mOhms - 12 V, + 12 V 6 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 650V/80MOSICFETG3TO247 713재고 상태
₩18,860.4
₩10,374
최소: 1
배수: 1
최대: 300
Through Hole TO-247-3 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 750V/18MOSICFETG4TO247 642재고 상태
₩21,356.4
₩12,511.2
₩12,402
최소: 1
배수: 1
최대: 600
Through Hole TO-247-3 1 Channel 750 V 81 A 23 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 385 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 750V/18MOSICFETG4TO247 534재고 상태
₩37,268.4
₩29,577.6
₩25,568.4
₩24,211.2
최소: 1
배수: 1
최대: 600
Through Hole TO-247-4 1 Channel 750 V 81 A 23 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 385 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 750V/60MOSICFETG4TO247-4 560재고 상태
₩20,560.8
₩11,419.2
₩10,920
최소: 1
배수: 1
Through Hole TO-247-4 1 Channel 750 V 28 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 1200V/150MOSICFETG3TO263-7 357재고 상태
컷 테이프
₩19,609.2
₩11,434.8
₩10,530
₩9,968.4
릴
₩9,968.4
최소: 1
배수: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 17 A 150 mOhms - 25 V, + 25 V 4.4 V 25.7 nC - 55 C + 175 C 136 W Enhancement SiC FET
onsemi SiC MOSFET 1200V/40MOSICFETG3TO24 227재고 상태
₩45,832.8
₩34,210.8
₩30,654
₩30,560.4
최소: 1
배수: 1
Through Hole TO-247-3 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement SiC FET
onsemi SiC MOSFET 1200V/40MOSICFETG3TO247-4 630재고 상태
₩46,035.6
₩30,560.4
최소: 1
배수: 1
Through Hole TO-247-4 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 650V/80MOSICFETG3TO247-4 583재고 상태
₩19,827.6
₩11,294.4
₩10,467.6
₩10,077.6
최소: 1
배수: 1
Through Hole TO-247-4 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 1200V/16MOSICFETG3TO24 203재고 상태
₩94,208.4
₩74,833.2
최소: 1
배수: 1
Through Hole TO-247-3 1 Channel 1.2 kV 107 A 21 mOhms - 20 V, + 20 V 4 V 218 nC - 55 C + 175 C 517 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 650V/40MOSICFETG3TO263 736재고 상태
컷 테이프
₩29,718
₩19,188
₩18,096
₩17,128.8
릴
₩17,128.8
최소: 1
배수: 1
: 800
SMD/SMT D2PAK-7 1 Channel 650 V 43 A 42 mOhms - 25 V, + 25 V 6 V 43 nC - 55 C + 175 C 195 W Enhancement SiC FET
onsemi SiC MOSFET 750V/33MOSICFETG4TO263 486재고 상태
컷 테이프
₩23,727.6
₩13,899.6
₩13,150.8
릴
₩13,150.8
최소: 1
배수: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 44 A 41 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 197 W Enhancement SiC FET