20V-60V OptiMOS Power MOSFETs

Infineon's 20V-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar microinverter), power supply (e.g. server and telecom), and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency, and lower cost.

결과: 43
선택 이미지 부품 번호 제조업체 설명 데이터시트 구매 가능 정보 가격 (KRW) 수량에 따라 단가별로 테이블의 결과를 필터링합니다. 수량 RoHS ECAD 모델 기술 장착 스타일 패키지/케이스 트랜지스터 극성 채널 수 Vds - 드레인 소스 항복 전압 Id - 연속 드레인 전류 Rds On - 드레인 소스 저항 Vgs - 게이트 소스 전압 Vgs th - 게이트 소스 역치 전압 Qg - 게이트 전하 최저 작동온도 최고 작동온도 Pd - 전력 발산 채널 모드 자격 상표명 포장
Infineon Technologies MOSFET N-Ch 25V 100A TDSON-8 OptiMOS 5,275재고 상태
최소: 1
배수: 1
: 5,000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 25 V 100 A 1.05 mOhms - 20 V, 20 V 1.2 V 59 nC - 55 C + 150 C 96 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET 25V 1 N-CH HEXFET 1.25mOhms 46nC 6,267재고 상태
최소: 1
배수: 1
: 4,800

Si SMD/SMT DirectFET-MX N-Channel 1 Channel 25 V 220 A 1.6 mOhms - 20 V, 20 V 1.8 V 46 nC - 40 C + 150 C 96 W Enhancement DirectFET Reel, Cut Tape, MouseReel
Infineon Technologies IPP029N06NXKSA1
Infineon Technologies MOSFET OptiMOS Power-Transistor,60V 400재고 상태
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 84 A 2.9 mOhms - 20 V, 20 V 3.3 V 56 nC - 55 C + 175 C 38 W Enhancement OptiMOS Tube
Infineon Technologies MOSFET N-Ch 25V 58A TDSON-8 OptiMOS 10,250재고 상태
최소: 1
배수: 1
: 5,000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 25 V 58 A 5 mOhms - 20 V, 20 V 1.2 V 10.4 nC - 55 C + 150 C 28 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 46재고 상태
최소: 1
배수: 1
: 5,000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 30 V 100 A 1.6 mOhms - 20 V, 20 V 1.2 V 44 nC - 55 C + 150 C 69 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 5,127재고 상태
최소: 1
배수: 1
: 5,000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 30 V 100 A 2.2 mOhms - 20 V, 20 V 1.2 V 35 nC - 55 C + 150 C 48 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 30V 63A TDSON-8 OptiMOS 5,007재고 상태
최소: 1
배수: 1
: 5,000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 30 V 63 A 4.5 mOhms - 20 V, 20 V 1.2 V 13 nC - 55 C + 150 C 30 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 25V 40A TDSON-8 OptiMOS 12,859재고 상태
최소: 1
배수: 1
: 5,000

Si SMD/SMT TSDSON-8 N-Channel 1 Channel 25 V 40 A 6.5 mOhms - 20 V, 20 V 2 V 9.1 nC - 55 C + 150 C 26 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 30V 36A TDSON-8 OptiMOS 402재고 상태
10,000예상 2026-12-17
최소: 1
배수: 1
: 5,000

Si SMD/SMT TSDSON-8 N-Channel 1 Channel 34 V 36 A 12 mOhms - 20 V, 20 V 2 V 13 nC - 55 C + 150 C 25 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 60V 45A D2PAK-2 1,865재고 상태
최소: 1
배수: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 60 V 45 A 4.9 mOhms - 20 V, 20 V 2.1 V 32 nC - 55 C + 175 C 83 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 60V 100A I2PAK-3 526재고 상태
최소: 1
배수: 1

Si Through Hole TO-262-3 N-Channel 1 Channel 60 V 100 A 2.7 mOhms - 20 V, 20 V 2.1 V 66 nC - 55 C + 175 C 136 W Enhancement OptiMOS Tube
Infineon Technologies MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
3,819예상 2026-03-12
최소: 1
배수: 1
: 5,000

Si SMD/SMT TSDSON-8 N-Channel 1 Channel 30 V 40 A 4.6 mOhms - 20 V, 20 V 2 V 17 nC - 55 C + 150 C 37 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 15V-30V 비재고 리드 타임 52 주
최소: 1
배수: 1
: 5,000

Si SMD/SMT TSDSON-8 N-Channel 1 Channel 30 V 100 A 2.9 mOhms - 20 V, 20 V 2 V 19 nC - 55 C + 150 C 43 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies IPP020N06NXKSA1
Infineon Technologies MOSFET IFX FET 60V 비재고 리드 타임 8 주
최소: 500
배수: 500

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 120 A 2 mOhms - 20 V, 20 V 3.3 V 106 nC - 55 C + 175 C 214 W Enhancement Tube
Infineon Technologies IPP040N06NXKSA1
Infineon Technologies MOSFET IFX FET 60V 비재고 리드 타임 8 주
최소: 1
배수: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 69 A 4 mOhms - 20 V, 20 V 3.3 V 38 nC - 55 C + 175 C 36 W Enhancement Tube
Infineon Technologies MOSFET N-Ch 25V 100A TDSON-8 OptiMOS 비재고 리드 타임 52 주
최소: 5,000
배수: 5,000
: 5,000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 25 V 100 A 1.2 mOhms - 20 V, 20 V 1.2 V 52 nC - 55 C + 150 C 74 W Enhancement AEC-Q100 OptiMOS Reel
Infineon Technologies MOSFET N-Ch 25V 100A TDSON-8 OptiMOS 비재고 리드 타임 26 주
최소: 5,000
배수: 5,000
: 5,000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 25 V 100 A 1.5 mOhms - 20 V, 20 V 1.2 V 48 nC - 55 C + 150 C 69 W Enhancement OptiMOS Reel
Infineon Technologies MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS 비재고 리드 타임 20 주
최소: 5,000
배수: 5,000
: 5,000

Si SMD/SMT TSDSON-8 N-Channel 1 Channel 25 V 153 A 1.9 mOhms - 20 V, 20 V 2 V 39 nC - 55 C + 150 C 69 W Enhancement OptiMOS Reel